Search Results - "Wickboldt, Paul"
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1
Polysilicon thin film transistors fabricated on low temperature plastic substrates
Published in Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films (01-07-1999)“…We present device results from polysilicon thin film transistors (TFTs) fabricated at a maximum temperature of 100 °C on polyester substrates. Critical to our…”
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Conference Proceeding Journal Article -
2
Room temperature indium tin oxide by XeCl excimer laser annealing for flexible display
Published in Thin solid films (22-07-2004)“…A XeCl excimer laser ( λ=308 nm) has been used to anneal Indium Tin Oxide (ITO) films deposited at 25 °C using DC magnetron sputtering. With increasing laser…”
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Journal Article -
3
Defect Passivation in Poly-Si TFTs by Ion Implantation and Pulsed Laser Annealing
Published in IEEE electron device letters (01-10-2006)“…Improvement in the performance of excimer laser annealed (ELA) poly-Si thin-film transistors was seen through ion implantation of N, O, or F prior to the ELA…”
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Journal Article -
4
6.4: Crystallization of Ultra-low Temperature ITO by XeCl Excimer Laser Annealing
Published in SID International Symposium Digest of technical papers (01-05-2002)“…The effect of excimer laser (XeCl, λ=308nm) annealing on ITO films deposited at 25°C using DC magnetron sputtering has been studied. With increasing laser…”
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Journal Article -
5
Visible room-temperature photoluminescence from oxidized germanium
Published in Journal of non-crystalline solids (1996)“…Strong visible photoluminescence (PL) has been observed at room temperature from oxidized amorphous hydrogenated germanium. Excitation by the 488 nm line from…”
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Journal Article -
6
Deposition and examination of glow discharge produced amorphous hydrogenated germanium
Published 01-01-1993“…This thesis presents the results of extensive studies of the deposition and examination of amorphous hydrogenated germanium (a-Ge:H) thin films deposited from…”
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Dissertation -
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Examination of (crystallized a-Ge:H)/a-SiN x:H multilayers which display photoluminescence
Published in Journal of non-crystalline solids (1996)“…A study has been conducted of (crystallized a-Ge:H)/a-SiN x:H multilayers which display room temperature photoluminescence in the visible range. The…”
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Journal Article -
8
Plasma deposited non-stoichiometric hydrogenated germanium sulfide a-Ge 1− xS x:H ( x < 0.3)
Published in Journal of non-crystalline solids (1996)“…Hydrogenated amorphous germanium-sulfur alloys were prepared by PCVD from H 2, GeH 4 and SF 6. Addition of sulfur reduces the hydrogen concentration in the…”
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Journal Article -
9
Examination of (crystallized a-Ge:H)/a-SiNx:H multilayers which display photoluminescence
Published in Journal of non-crystalline solids (01-05-1996)Get full text
Journal Article -
10
Improved a-Si 1 − xGe x:H of large x deposited by PECVD
Published in Journal of non-crystalline solids (1996)“…By plasma enhanced chemical vapor deposition a-Si 1 − x Ge x :H thin films of large x have been prepared which possess optical, electrical and structural…”
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Journal Article -
11
Plasma deposited non-stoichiometric hydrogenated germanium sulfide a-Ge1−xSx:H (x < 0.3)
Published in Journal of non-crystalline solids (01-05-1996)Get full text
Journal Article -
12
Improved a-Si1 − xGex:H of large x deposited by PECVD
Published in Journal of non-crystalline solids (01-05-1996)Get full text
Journal Article