Search Results - "Wichmann, Nicolas"

Gate length variation effect on performance of gate-first self-aligned In₀.₅₃Ga₀.₄₇As MOSFET by Mohd Razip Wee, Mohd F, Dehzangi, Arash, Bollaert, Sylvain, Wichmann, Nicolas, Majlis, Burhanuddin Y

“…A multi-gate n-type In₀.₅₃Ga₀.₄₇As MOSFET is fabricated using gate-first self-aligned method and air-bridge technology. The devices with different gate lengths…”
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Monte Carlo analysis of the dynamic behavior of III–V MOSFETs for low-noise RF applications by Shi, Ming, Saint-Martin, Jérôme, Bournel, Arnaud, Querlioz, Damien, Wichmann, Nicolas, Bollaert, Sylvain, Danneville, François, Dollfus, Philippe

“…•A device Monte Carlo simulator is used in transient regime.•Bulk and XOI III–V MOSFET architectures are benchmark with standard Si Bulk MOSFET.•Both static…”
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100 nm AlSb/InAs HEMT for Ultra-Low-Power Consumption, Low-Noise Applications by Wallart, Xavier, Danneville, François, Bollaert, Sylvain, Wichmann, Nicolas, Desplanque, Ludovic, Bagumako, Sonia, Gardès, Cyrille, Roelens, Yannick

“…We report on high frequency (HF) and noise performances of AlSb/InAs high electron mobility transistor (HEMT) with 100 nm gate length at room temperature in…”
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Impact of oxygen plasma postoxidation process on Al2O 3 / n -In0.53Ga0.47As metal-oxide-semiconductor capacitors by Lechaux, Y., Fadjie-Djomkam, A., Bollaert, S., Wichmann, Nicolas

“…Capacitance-voltage (C-V) measurements and x-ray photoelectron spectroscopy (XPS) analysis were performed in order to investigate the effect of a oxygen (O2)…”
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Investigation of the UTB-InAs-MOSFETs structure by Ammi, Sofiane, Aissat, Abdelkader, Wichmann, Nicolas, Bollaert, Sylvain

“…An Ultra-Thin-Body (UTB) InP/InAs/InGaAs MOSFETs is investigated. Computer Aided Design(CAD) tools are used to extract the electrical properties of this…”
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75 nm Gate Length PHEMT With f max = 800 GHz Using Asymmetric Gate Recess: RF and Noise Investigation by Samnouni, M., Wichmann, N., Wallart, X., Coinon, C., Lepilliet, S., Bollaert, S.

“…We report a high maximum frequency of oscillation ([Formula Omitted]) and a current-gain cutoff frequency ([Formula Omitted]) of 800 and 260 GHz, respectively,…”
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Analog/RF Study of Self-aligned In^sub 0.53^Ga^sub 0.47^As MOSFET with Scaled Gate Length by Dehzangi, Arash, Larki, Farhad, Mohd Razip Wee, M F, Wichmann, Nicolas, Majlis, Burhanuddin Y, Bollaert, Sylvain

“…This study presents the impact of gate length scaling on analog and radio frequency (RF) performance of a self- aligned multi-gate n-type In0.53Ga0.47As metal…”
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Electrical characterization of In0.53Ga0.47As/In0.52Al0.48As high electron mobility transistors on plastic flexible substrate under mechanical bending conditions by Shi, J., Wichmann, N., Roelens, Y., Bollaert, S.

“…InAlAs/InGaAs high electron mobility transistors (HEMTs) have been transferred onto polyimide flexible substrate. By means of epitaxial layer optimization,…”
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Static and low frequency noise characterization of ultra-thin body InAs MOSFETs by Karatsori, T.A., Pastorek, M., Theodorou, C.G., Fadjie, A., Wichmann, N., Desplanque, L., Wallart, X., Bollaert, S., Dimitriadis, C.A., Ghibaudo, G.

“…•The electrical parameters of UTB InAs MOSFETs were investigated.•The drain current low-frequency noise in long-channel devices was also…”
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Microwave performance of 100 nm-gate In0.53Ga0.47As/In0.52Al0.48As high electron mobility transistors on plastic flexible substrate by Shi, J., Wichmann, N., Roelens, Y., Bollaert, S.

“…The transfer of 100 nm gate length high electron mobility transistors onto plastic flexible substrate is reported. The layers of transistors are grown…”
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Analog/RF Study of Self-aligned In0.53Ga0.47As MOSFET with Scaled Gate Length by Dehzangi, Arash, Larki, Farhad, Mohd Razip Wee, M. F., Wichmann, Nicolas, Majlis, Burhanuddin Y., Bollaert, Sylvain

“…This study presents the impact of gate length scaling on analog and radio frequency (RF) performance of a self- aligned multi-gate n -type In 0.53 Ga 0.47 As…”
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Gate Length Variation Effect on Performance of Gate-First Self-Aligned In.sub.0.53Ga.sub.0.47As MOSFET by Mohd Razip Wee, Mohd F, Dehzangi, Arash, Bollaert, Sylvain, Wichmann, Nicolas, Majlis, Burhanuddin Y

“…A multi-gate n-type In.sub.0.53 Ga.sub.0.47 As MOSFET is fabricated using gate-first self-aligned method and air-bridge technology. The devices with different…”
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Comparison Between the Dynamic Performance of Double- and Single-Gate AlInAs/InGaAs HEMTs by Vasallo, B.G., Wichmann, N., Bollaert, S., Roelens, Y., Cappy, A., Gonzalez, T., Pardo, D., Mateos, J.

“…The static and dynamic behavior of InAlAs/InGaAs double-gate high-electron mobility transistors (DG-HEMTs) is studied by means of an ensemble 2-D Monte Carlo…”
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Ultra thin body InAs MOSFET with raised InAs n+ S/D by selective MBE by Pastorek, Matej, Ridaoui, Mohamed, Fadjie, Alain, Olivier, Aurelien, Wichmann, Nicolas, Desplanque, Ludovic, Wallart, Xavier, Bollaert, Sylvain

“…As we tend towards extremely scaled CMOS circuits, InAs material has potential to replace traditional Si technology[1]. High electron mobility achieved in this…”
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Monte Carlo analysis of the dynamic behavior of IIIaV MOSFETs for low-noise RF applications by Shi, Ming, Saint-Martin, Jerome, Bournel, Arnaud, Querlioz, Damien, Wichmann, Nicolas, Bollaert, Sylvain, Danneville, Francois, Dollfus, Philippe

“…IIIaV MetalaOxide-Semiconductor Field-Effect Transistors (MOSFETs) with a high-Io dielectric gate stack are investigated as a possible route to enhance the…”
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Sb-HEMT: Toward 100-mV Cryogenic Electronics by Noudéviwa, Albert, Roelens, Yannick, Danneville, François, Olivier, Aurélien, Wichmann, Nicolas, Waldhoff, Nicolas, Lepilliet, Sylvie, Dambrine, Gilles, Desplanque, Ludovic, Wallart, Xavier, Moschetti, Giuseppe, Grahn, Jan, Bollaert, Sylvain

“…In this paper, we present a first full set of characteristics (dc, f T , f max , and noise) of InAs/AlSb high-electron mobility transistors (HEMTs) operating…”
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Comparison Between the Noise Performance of Double- and Single-Gate InP-Based HEMTs by Vasallo, Beatriz G., Wichmann, Nicolas, Bollaert, Sylvain, Roelens, Yannick, Cappy, Alain, Gonzalez, TomÁs, Pardo, Daniel, Mateos, Javier

“…The noise performance of InAlAs/InGaAs double-gate (DG) and standard high-electron-mobility transistors (HEMTs) is analyzed by means of an ensemble 2-D Monte…”
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Sb-HEMT : toward 100-mV cryogenics electronics by Noudewiva, A., Roelens, Yannick, Danneville, Francois, Olivier, A., Wichmann, Nicolas, Waldhoff, N., Lepilliet, Sylvie, Dambrine, Gilles, Desplanque, L., Wallart, X., Moschetti, G., Grahn, J., Bollaert, S.

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Bending effect on frequency performance of InAlAs/InGaAs HEMT transferred on flexible substrate by Bollaert, Sylvain, Shi, Jinshan, Wichmann, Nicolas, Roelens, Yannick

“…100 nm gate length InAlAs/InGaAs high electron mobility transistors (HEMTs) have been transferred onto polyimide flexible substrate. In our previous paper,…”
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Fabrication and characterization of 100-nm In0.53Ga0.47As-In0.52Al0.48As double-gate HEMTs with two separate gate controls by WICHMANN, N, DUSZYNSKI, I, WALLART, X, BOLLAERT, S, CAPPY, A

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