Charge trapping in irradiated SOI wafers measured by second harmonic generation

Charge trapping in irradiated SOI wafers measured by second harmonic generation

Total dose effects on silicon on insulator (SOI) UNIBOND wafers are studied via optical second harmonic generation (SHG). This technique is qualitatively compared with the pseudo-MOSFET technique for monitoring charges at the interfaces. Optical and electrical methods are combined to separate the co...

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Bibliographic Details
Published in:IEEE transactions on nuclear science Vol. 51; no. 6; pp. 3231 - 3237
Main Authors: Bongim Jun, Schrimpf, R.D., Fleetwood, D.M., White, Y.V., Pasternak, R., Rashkeev, S.N., Brunier, F., Bresson, N., Fouillat, M., Cristoloveanu, S., Tolk, N.H.
Format: Journal Article
Language:English
Published: New York IEEE 01-12-2004
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects:
Charge measurement
Current measurement
Electrical measurement
Frequency conversion
Insulators
Monitoring
Nonlinear optics
Optical films
Optical harmonic generation
Optical refraction
Optical sensors
Oxides
Pseudo-MOSFET
radiation effects
Second harmonic generation
second harmonic generation (SHG)
Signal detection
Silicon
silicon on insulator (SOI)
Silicon on insulator technology
total dose
Trapping
UNIBOND
Wafers
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Summary:Total dose effects on silicon on insulator (SOI) UNIBOND wafers are studied via optical second harmonic generation (SHG). This technique is qualitatively compared with the pseudo-MOSFET technique for monitoring charges at the interfaces. Optical and electrical methods are combined to separate the contribution of the signal from each interface to the total SHG intensity. Radiation-induced oxide and interface traps increase the interface fields as determined from the SHG signals and the results are compared with electrical measurements.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2004.839140