Search Results - "Whelan, C S"

High indium metamorphic HEMT on a GaAs substrate by Hoke, W.E., Kennedy, T.D., Torabi, A., Whelan, C.S., Marsh, P.F., Leoni, R.E., Xu, C., Hsieh, K.C.

“…Metamorphic high electron mobility transistor structures with high indium content channel layers have been developed on GaAs substrates by solid source…”
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Properties of metamorphic materials and device structures on GaAs substrates by Hoke, W.E., Kennedy, T.D., Torabi, A., Whelan, C.S., Marsh, P.F., Leoni, R.E., Lardizabal, S.M., Zhang, Y., Jang, J.H., Adesida, I., Xu, C., Hsieh, K.C.

“…Metamorphic layer structures grown on GaAs substrates have been characterized and fabricated into high quality electrical and optical devices. The root mean…”
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Strain relaxation and dislocation filtering in metamorphic high electron mobility transistor structures grown on GaAs substrates by Lubyshev, D., Liu, W. K., Stewart, T. R., Cornfeld, A. B., Fang, X. M., Xu, X., Specht, P., Kisielowski, C., Naidenkova, M., Goorsky, M. S., Whelan, C. S., Hoke, W. E., Marsh, P. F., Mirecki Millunchick, J., Svensson, S. P.

“…Plastic relaxation in metamorphic high electron mobility transistor (MHEMT) structures was investigated by x-ray reciprocal mapping and high-resolution…”
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40-Gbit/s OEIC on GaAs substrate through metamorphic buffer technology by Zhang, Y., Whelan, C.S., Leoni, R., Marsh, P.F., Hoke, W.E., Hunt, J.B., Laighton, C.M., Kazior, T.E.

“…An optoelectronic integrated circuit operating in the 1.55-μm wavelength range was realized on GaAs substrate through metamorphic technology. High indium…”
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Reliability of metamorphic HEMTs on GaAs substrates by Marsh, P.F, Whelan, C.S, Hoke, W.E, Leoni III, R.E, Kazior, T.E

“…Metamorphic HEMT (MHEMT) technology enables the growth of high indium content channels on GaAs substrates, giving them the performance of InP HEMTs. MHEMT…”
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High-selectivity pattern transfer processes for self-assembled monolayer electron beam resists by Carr, D. W., Lercel, M. J., Whelan, C. S., Craighead, H. G., Seshadri, K., Allara, D. L.

“…Novel processes have been developed for transferring patterns using self-assembled monolayer (SAM) electron beam resists. Because the SAMs are very thin,…”
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A K-band subharmonic down-converter in a GaAs metamorphic HEMT process by Matinpour, B., Lal, N., Laskar, J., Leoni, R.E., Whelan, C.S.

“…In this paper, we present the first implementation of a K-band subharmonic down-converter fabricated in a 0.18-/spl mu/m GaAs Metamorphic High Electron…”
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Low noise metamorphic HEMT devices and amplifiers on GaAs substrates by Marsh, P.F., Chu, S.L.G., Lardizabal, S.M., Leoni, R.E., Kang, S., Wohlert, R., Bowlby, A.M., Hoke, W.E., McTaggart, R.A., Whelan, C.S., Lemonias, P.J., McIntosh, P.M., Kazior, T.E.

“…Excellent noise (0.41 dB minimum noise figure with 11.5 dB associated gain at 18 GHz) and linearity (third order intercept point of 37.6 dBm at 42.5 mW DC…”
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Material properties and performance of metamorphic optoelectronic integrated circuits grown by molecular beam epitaxy on GaAs substrates by Hoke, W. E., Leoni, R. E., Whelan, C. S., Kennedy, T. D., Torabi, A., Marsh, P. F., Zhang, Y., Xu, C., Hsieh, K. C.

“…Solid source molecular beam epitaxy was used to deposit in a continuous process an integrated metamorphic high electron mobility transistor (HEMT) and PIN…”
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K-band receiver front-ends in a GaAs metamorphic HEMT process by Matinpour, B., Lal, N., Laskar, J., Leoni, R.E., Whelan, C.S.

“…In this paper, we present K-band receiver blocks fabricated in a state-of-the-art 0.18-/spl mu/m GaAs metamorphic high electron-mobility transistor (MHEMT)…”
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Millimeter-wave low-noise and high-power metamorphic HEMT amplifiers and devices on GaAs substrates by Whelan, C.S., Kazior, T.E., Marsh, P.F., Hoke, W.E., McTaggart, R.A., Lyman, P.S., Lemonias, P.J., Lardizabal, S.M., Leoni, R.E., Lichwala, S.J.

“…This paper reports on state of-the-art HEMT devices and circuit results utilizing 32% and 60% indium content InGaAs channel metamorphic technology on GaAs…”
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Threatened carotid artery rupture: a complication of radical neck surgery by Sanders, E M, Davis, K R, Whelan, C S, Deckers, P J

“…Carotid artery rupture is an infrequent but highly dangerous postoperative complication of radical head and neck surgery. The principal predisposing factors…”
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Improved electron-beam patterning of Si with self-assembled monolayers by Whelan, C. S., Lercel, M. J., Craighead, H. G., Seshadri, K., Allara, D. L.

“…A set of processes has been explored that enhances the utility of self-assembled-monolayer electron-beam resists for patterning silicon. A self-assembled…”
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Electrocoagulation in the treatment of skin cancers about the head and face by Whelan, C S

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High-frequency metamorphic p-i-n photodiodes and high-electron mobility transistor transimpedance amplifiers: Candidates for fiber-optic communications by Hoke, W. E., Leoni, R. E., Whelan, C. S., Marsh, P. F., Jang, J. H., Adesida, I., Joshi, A. M., Wang, X.

“…Solid source molecular-beam epitaxy was used to grow metamorphic films on GaAs substrates for optical (1.55 μ) p-i-n photodetectors and transimpedance…”
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Electrocoagulation and curettage for carcinoma involving the skin of the face, nose, eyelids, and ears by Whelan, C S, Deckers, P J

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W-band power metamorphic HEMT technology on GaAs by Herrick, K.J., Whelan, C.S., Marsh, P.F., Lardizabal, S.

“…Our 0.15 um power MHEMT development at W-band includes comparison of single (53%) and split channel (53/43%) material. Preliminary single stage microstrip…”
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Metamorphic optoelectronic integrated circuits by Leoni, R.E., Whelan, C.S., Marsh, P.F., Zhang, Y., Hunt, J.G., Laighton, C.S., Hoke, W.E., Kazior, T.E.

“…As the required operational bandwidth of photoreceivers is increased, it becomes desirable to monolithically integrate photodiodes and transistors in order to…”
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GaN technology for microwave and millimeter wave applications by Kolias, N. J., Whelan, C. S., Kazior, T. E., Smith, K. V.

“…After many years of development to improve the material and devices, GaN technology is now in production and poised to revolutionize many of today's Radar and…”
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Medical aspects of the Worcester tornado disaster by HIGHT, D, BLODGETT, J T, CROCE, E J, HORNE, E O, MCKOAN, Jr, J W, WHELAN, C S

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