Search Results - "Westlinder, J."

Diffusion of Fe and Na in co-evaporated Cu(In,Ga)Se2 devices on steel substrates by Platzer-Björkman, C., Jani, S., Westlinder, J., Linnarsson, M.K., Scragg, J., Edoff, M.

“…In this work we study impurity diffusion into Cu(In,Ga)Se2 from stainless steel substrates with and without Cr diffusion barriers using secondary ion mass…”
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Development of Robust Metal‐Supported SOFCs and Stack Components in EU METSAPP Consortium by Sudireddy, B. R., Nielsen, J., Persson, Å. H., Thydén, K., Brodersen, K., Ramousse, S., Neagu, D., Stefan, E., Irvine, J. T. S., Geisler, H., Weber, A., Reiss, G., Schauperl, R., Rechberger, J., Froitzheim, J., Sachitanand, R., Falk‐Windisch, H., Svensson, J. E., Lundberg, M. W., Berger, R., Westlinder, J., Hornauer, S., Kiefer, T.

“…The potential of MS‐SOFCs was demonstrated through the previous EU METSOFC project, which concluded that the development of oxidation resistant novel…”
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On the thermal stability of atomic layer deposited TiN as gate electrode in MOS devices by Westlinder, J., Schram, T., Pantisano, L., Cartier, E., Kerber, A., Lujan, G.S., Olsson, J., Groeseneken, G.

“…The work function of ALD TiN was found to be above 5 eV after RTP annealing below 800/spl deg/C in a nitrogen atmosphere, while higher annealing temperatures…”
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Investigation of the thermal stability of reactively sputter-deposited TiN MOS gate electrodes by Sjoblom, G., Westlinder, J., Olsson, J.

“…The effective work function of TiN, deposited by reactive magnetron sputtering, was found to be unaltered at /spl sim/5 eV after rapid thermal processing (RTP)…”
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Synthesis of c-axis-oriented AlN thin films on high-conducting layers: Al, Mo, Ti, TiN, and Ni by Iriarte, G.F., Bjurstrom, J., Westlinder, J., Engelmark, F., Katardjiev, I.V.

“…Thin piezoelectric polycrystalline films such as AlN, ZnO, etc., are of great interest for the fabrication of thin film bulk/surface acoustic resonators…”
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Low-resistivity ZrNx metal gate in MOS devices by WESTLINDER, J, MALMSTRÖM, J, SJÖBLOM, G, OLSSON, J

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Electrical characterization of AlN MIS and MIM structures by Engelmark, F., Westlinder, J., Iriarte, G.F., Katardjiev, I.V., Olsson, J.

“…Aluminum nitride (AlN) thin films have been deposited on p-Si[100] and Mo-Si[100] substrates. The sputter deposited Mo was polycrystalline, predominantly…”
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Experimental and computer simulation studies of the “baffled target” reactive sputtering process by Engelmark, F., Westlinder, J., Nyberg, T., Berg, S.

“…Reactive sputtering is a technique widely employed for deposition of compound materials. One drawback encountered with this technique is that the target…”
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Low-frequency noise and Coulomb scattering in Si0.8Ge0.2 surface channel pMOSFETs with ALD Al2O3 gate dielectrics by Haartman, M. von, Westlinder, J., Wu, D., Malm, B.G., Hellström, P.-E., Olsson, J., Östling, M.

“…Carrier mobility and low-frequency noise were investigated in Si0.8Ge0.2 surface channel pMOSFETs with ALD Al2O3 gate dielectrics. The devices were annealed in…”
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Long-term (4 year) degradation behavior of coated stainless steel 441 used for solid oxide fuel cell interconnect applications by Goebel, Claudia, Berger, Robert, Bernuy-Lopez, Carlos, Westlinder, Jörgen, Svensson, Jan-Erik, Froitzheim, Jan

“…The present work aims to investigate the long-term stability of Ce/Co coated AISI 441 used as an interconnect material in solid oxide fuel cells (SOFC). Being…”
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Dielectric and Li transport properties of electron conducting and non-conducting sputtered amorphous Ta2O5 films by FRENNING, G, NILSSON, M, WESTLINDER, J, NIKLASSON, G. A, MATTSSON, M. Strømme

“…Two types of sputtered thin film amorphous tantalum oxide (Ta 2 O 5 ) were studied: one electron conducting Ta 2 O 5 (ec-Ta 2 O 5 ) and the other…”
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Patterning of tantalum pentoxide, a high epsilon material, by inductively coupled plasma etching by Jonsson, L. B., Westlinder, J., Engelmark, F., Hedlund, C., Du, J., Smith, U., Blom, H.-O.

“…Integrated capacitors can easily cover a major part of the total chip area which may seriously affect the cost to produce the chip. By using a high epsilon…”
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Diffusion of Fe and Na in co-evaporated Cu(In, Ga) Se-2 devices on steel substrates by Platzer-Bjorkman, C., Jani, S., Westlinder, J., Linnarsson, Margareta K., Scragg, J., Edoff, M.

“…In this work we study impurity diffusion into Cu(In, Ga) Se-2 from stainless steel substrates with and without Cr diffusion barriers using secondary ion mass…”
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Variable work function in MOS capacitors utilizing nitrogen-controlled TiNx gate electrodes by WESTLINDER, Jörgen, SJÖBLOM, Gustaf, OLSSON, Jörgen

“…A substantial shift in the work function of TiNx by as much as 0.7 eV is achieved by varying the nitrogen gas flow during the reactive sputter deposition of…”
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Scaling of high-k dielectrics towards sub-1nm EOT by Heyns, M., Beckx, S., Bender, H., Blomme, P., Boullart, W., Brijs, B., Carter, R., Caymax, M., Claes, M., Conard, T., De Gendt, S., Degraeve, R., Delabie, A., Deweerdt, W., Groeseneken, G., Henson, K., Kauerauf, T., Kubicek, S., Lucci, L., Lujan, G., Mentens, J., Pantisano, L., Petry, J., Richard, O., Rohr, E., Schram, T., Vandervorst, W., Van Doorne, P., Van Elshocht, S., Westlinder, J., Witters, T., Zhao, C., Cartier, E., Chen, J., Cosnier, V., Green, M., Jang, S.E., Kaushik, V., Kerber, A., Kluth, J., Lin, S., Tsai, W., Young, E., Manabe, Y., Shimamoto, Y., Bajolet, P., De Witte, H., Maes, J.W., Date, L., Pique, D., Coenegrachts, B., Vertommen, J., Passefort, S.

“…High-k dielectric layers are deposited using ALD or MOCVD. Most of the work focused on Hf-based high-k dielectrics, either as pure HfO/sub 2/, as silicate or…”
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Synthesis of c-axis oriented AlN thin films on metal layers: Al, Mo, Ti, TiN and Ni by Iriarte, G.F., Bjurstrom, J., Westlinder, J., Engelmark, F., Katardjiev, I.V.

“…Thin piezoelectric polycrystalline films such as AlN, ZnO, etc are of great interest for the fabrication of Thin Film Bulk/Surface Acoustic Resonators (TFBAR)…”
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Low-resistivity ZrN x metal gate in MOS devices by Westlinder, J., Malmström, J., Sjöblom, G., Olsson, J.

“…Zirconium nitride (ZrN) is presented as a metal gate candidate for future MOSFET components. Low resistivity (70 μΩ cm) of the ZrN x thin film and n-type work…”
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Dielectric and Li transport properties of electron conducting and non-conducting sputtered amorphous Ta 2O 5 films by Frenning, G, Nilsson, M, Westlinder, J, Niklasson, G.A, Mattsson, M.Strømme

“…Two types of sputtered thin film amorphous tantalum oxide (Ta 2O 5) were studied: one electron conducting Ta 2O 5 (ec-Ta 2O 5) and the other non-conducting Ta…”
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Low-frequency noise and Coulomb scattering in Si0.8 Ge0.2 surface channel pMOSFET's with ALD Al2O3 gate dielectrics by von Haartman, M, Westlinder, J, Wu, D, Malm, BG, Hellström, P-E, Olsson, J, Östling, M

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Dielectric and Li transport properties of electron conducting and non-conducting sputtered amorphous Ta sub(2)O sub(5) films by Frenning, G, Nilsson, M, Westlinder, J, Niklasson, G A, Stromme Mattsson, M

“…Two types of sputtered thin film amorphous tantalum oxide (Ta sub(2)O sub(5)) were studied: one electron conducting Ta sub(2)O sub(5) (ec-Ta sub(2)O sub(5))…”
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