Search Results - "Wernersson, Lars‐Erik"

III–V Nanowire Complementary Metal–Oxide Semiconductor Transistors Monolithically Integrated on Si by Svensson, Johannes, Dey, Anil W, Jacobsson, Daniel, Wernersson, Lars-Erik

“…III–V semiconductors have attractive transport properties suitable for low-power, high-speed complementary metal–oxide-semiconductor (CMOS) implementation, but…”
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As-deposited ferroelectric HZO on a III–V semiconductor by Andersen, André, Persson, Anton E. O., Wernersson, Lars-Erik

“…By electrical characterization of thin films deposited by atomic layer deposition, HfxZr1−xO2 (HZO) is shown to be ferroelectric as-deposited, i.e., without…”
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Reconfigurable signal modulation in a ferroelectric tunnel field-effect transistor by Zhu, Zhongyunshen, Persson, Anton E. O., Wernersson, Lars-Erik

“…Reconfigurable transistors are an emerging device technology adding new functionalities while lowering the circuit architecture complexity. However, most…”
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Individual Defects in InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors Operating below 60 mV/decade by Memisevic, Elvedin, Hellenbrand, Markus, Lind, Erik, Persson, Axel R, Sant, Saurabh, Schenk, Andreas, Svensson, Johannes, Wallenberg, Reine, Wernersson, Lars-Erik

“…Tunneling field-effect transistors (TunnelFET), a leading steep-slope transistor candidate, is still plagued by defect response, and there is a large…”
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Scaling of Vertical InAs-GaSb Nanowire Tunneling Field-Effect Transistors on Si by Memisevic, Elvedin, Svensson, Johannes, Hellenbrand, Markus, Lind, Erik, Wernersson, Lars-Erik

“…We demonstrate improved performance due to enhanced electrostatic control achieved by diameter scaling and gate placement in vertical InAs-GaSb tunneling…”
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Reduced annealing temperature for ferroelectric HZO on InAs with enhanced polarization by Persson, Anton E. O., Athle, Robin, Littow, Pontus, Persson, Karl-Magnus, Svensson, Johannes, Borg, Mattias, Wernersson, Lars-Erik

“…Deposition, annealing, and integration of ferroelectric Hf x Zr 1 − x O 2 (HZO) thin films on the high-mobility semiconductor InAs using atomic layer…”
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Reducing ambipolar off-state leakage currents in III-V vertical nanowire tunnel FETs using gate-drain underlap by Krishnaraja, Abinaya, Svensson, Johannes, Lind, Erik, Wernersson, Lars-Erik

“…Tunnel Field-Effect Transistors (TFETs) are an emerging alternative to CMOS for ultralow power and neuromorphic applications. The off current (Ioff) and,…”
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Geometric control of diffusing elements on InAs semiconductor surfaces via metal contacts by Benter, Sandra, Jönsson, Adam, Johansson, Jonas, Zhu, Lin, Golias, Evangelos, Wernersson, Lars-Erik, Mikkelsen, Anders

“…Local geometric control of basic synthesis parameters, such as elemental composition, is important for bottom-up synthesis and top-down device definition…”
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High-Frequency Gate-All-Around Vertical InAs Nanowire MOSFETs on Si Substrates by Johansson, Sofia, Memisevic, Elvedin, Wernersson, Lars-Erik, Lind, Erik

“…We demonstrate a vertical InAs nanowire MOSFET integrated on Si substrate with an extrinsic peak cut-off frequency of 103 GHz and a maximum oscillation…”
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Radio-Frequency Characterization of Selectively Regrown InGaAs Lateral Nanowire MOSFETs by Zota, Cezar B., Roll, Guntrade, Wernersson, Lars-Erik, Lind, Erik

“…We demonstrate InGaAs multigate MOSFETs, so-called FinFETs. The lateral nanowires constituting the channel in these devices have been formed using selective…”
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Impact of doping and diameter on the electrical properties of GaSb nanowires by Babadi, Aein S., Svensson, Johannes, Lind, Erik, Wernersson, Lars-Erik

“…The effect of doping and diameter on the electrical properties of vapor-liquid-solid grown GaSb nanowires was characterized using long channel back-gated…”
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Improved Endurance of Ferroelectric HfxZr1–xO2 Integrated on InAs Using Millisecond Annealing by Athle, Robin, Blom, Theodor, Irish, Austin, Persson, Anton E. O., Wernersson, Lars‐Erik, Timm, Rainer, Borg, Mattias

“…Ferroelectric HfxZr1–xO2 (HZO) is typically achieved by crystallization of an amorphous thin film via rapid thermal processing (RTP) at time scales of seconds…”
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A Reconfigurable Ferroelectric Transistor as An Ultra‐Scaled Cell for Low‐Power In‐Memory Data Processing by Zhu, Zhongyunshen, Persson, Anton E. O., Wernersson, Lars‐Erik

“…Abstract Compact in‐memory computing architectures are desirable to embed artificial intelligence (AI) in resource‐restricted edge devices. However, current…”
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Vertical InAs/InGaAs Heterostructure Metal–Oxide–Semiconductor Field-Effect Transistors on Si by Kilpi, Olli-Pekka, Svensson, Johannes, Wu, Jun, Persson, Axel R, Wallenberg, Reine, Lind, Erik, Wernersson, Lars-Erik

“…III–V compound semiconductors offer a path to continue Moore’s law due to their excellent electron transport properties. One major challenge, integrating…”
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Combining Axial and Radial Nanowire Heterostructures: Radial Esaki Diodes and Tunnel Field-Effect Transistors by Dey, Anil W, Svensson, Johannes, Ek, Martin, Lind, Erik, Thelander, Claes, Wernersson, Lars-Erik

“…The ever-growing demand on high-performance electronics has generated transistors with very impressive figures of merit (Radosavljevic et al., IEEE Int…”
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InAs/GaSb Heterostructure Nanowires for Tunnel Field-Effect Transistors by Borg, B. Mattias, Dick, Kimberly A., Ganjipour, Bahram, Pistol, Mats-Erik, Wernersson, Lars-Erik, Thelander, Claes

“…InAs/GaSb nanowire heterostructures with thin GaInAs inserts were grown by MOVPE and characterized by electrical measurements and transmission electron…”
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Low Leakage-Current InAsSb Nanowire Photodetectors on Silicon by Thompson, Michael D, Alhodaib, Aiyeshah, Craig, Adam P, Robson, Alex, Aziz, Atif, Krier, Anthony, Svensson, Johannes, Wernersson, Lars-Erik, Sanchez, Ana M, Marshall, Andrew R. J

“…Axially doped p–i–n InAs0.93Sb0.07 nanowire arrays have been grown on Si substrates and fabricated into photodetectors for shortwave infrared detection. The…”
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Compressively-strained GaSb nanowires with core-shell heterostructures by Zhu, Zhongyunshen, Svensson, Johannes, Persson, Axel R., Wallenberg, Reine, Gromov, Andrei V., Wernersson, Lars-Erik

“…GaSb-based nanowires in a gate-all-around geometry are good candidates for binary p-type transistors, however they require the introduction of compressive…”
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Quantized Conduction and High Mobility in Selectively Grown InxGa1-xAs Nanowires by Zota, Cezar, Lindgren, David, Wernersson, Lars-Erik, Lind, Erik

“…We report measured quantized conductance and quasi-ballistic transport in selectively regrown In0.85Ga0.15As nanowires. Very low parasitic resistances obtained…”
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ZrO2 and HfO2 dielectrics on (001) n-InAs with atomic-layer-deposited in situ surface treatment by Babadi, Aein S., Lind, Erik, Wernersson, Lars-Erik

“…The electrical properties of ZrO2 and HfO2 gate dielectrics on n-InAs were evaluated. Particularly, an in situ surface treatment method including cyclic…”
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