Search Results - "Wernersson, E"

Vertical Gate-All-Around Nanowire GaSb-InAs Core-Shell n-Type Tunnel FETs by Vasen, T., Ramvall, P., Afzalian, A., Doornbos, G., Holland, M., Thelander, C., Dick, K. A., Wernersson, L. - E., Passlack, M.

“…Tunneling Field-Effect Transistors (TFET) are one of the most promising candidates for future low-power CMOS applications including mobile and Internet of…”
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Impact of Band-Tails on the Subthreshold Swing of III-V Tunnel Field-Effect Transistor by Memisevic, E., Lind, E., Hellenbrand, M., Svensson, J., Wernersson, L.-E

“…We present a simple model to evaluate the sharpness of the band edges for tunnel field-effect transistors (TFETs) by comparing the subthreshold swing and the…”
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Vertical high-mobility wrap-gated InAs nanowire transistor by Bryllert, T., Wernersson, L.-E., Froberg, L.E., Samuelson, L.

“…In this letter, the authors demonstrate a vertical wrap-gated field-effect transistor based on InAs nanowires [Proc. DRC, 2005, p. 157]. The nanowires have a…”
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A transmission line method for evaluation of vertical InAs nanowire contacts by Berg, M., Svensson, J., Lind, E., Wernersson, L.-E.

“…In this paper, we present a method for metal contact characterization to vertical semiconductor nanowires using the transmission line method (TLM) on a…”
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Defect evaluation in InGaAs field effect transistors with HfO2 or Al2O3 dielectric by Roll, G., Mo, J., Lind, E., Johansson, S., Wernersson, L.-E.

“…The performance of InGaAs metal oxide semiconductor field effect transistors with Al2O3 or HfO2 as gate oxide is evaluated and compared. The Al2O3 transistors…”
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Magnetic resonance imaging of the knee for chronological age estimation—a systematic review by Ording Muller, Lil-Sofie, Adolfsson, Jan, Forsberg, Lisa, Bring, Johan, Dahlgren, Jovanna, Domeij, Helena, Gornitzki, Carl, Wernersson, Emma, Odeberg, Jenny

“…Introduction Radiographs of the hand and teeth are frequently used for medical age assessment, as skeletal and dental maturation correlates with chronological…”
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Surface and core contribution to 1/ f -noise in InAs nanowire metal-oxide-semiconductor field-effect transistors by Persson, K.-M., Malm, B. G., Wernersson, L.-E.

“…By measuring 1/f-noise in wrap-gated InAs nanowire metal-oxide-semiconductor field-effect transistors with transport dominating, controllably, in either an…”
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Correlation-induced conductance suppression at level degeneracy in a quantum dot by Nilsson, H A, Karlström, O, Larsson, M, Caroff, P, Pedersen, J N, Samuelson, L, Wacker, A, Wernersson, L-E, Xu, H Q

“…The large, level-dependent g factors in an InSb nanowire quantum dot allow for the occurrence of a variety of level crossings in the dot. While we observe the…”
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Treatments for hyperemesis gravidarum: A systematic review by Vinnars, Marie‐Therese, Forslund, Maria, Claesson, Ing‐Marie, Hedman, Annicka, Peira, Nathalie, Olofsson, Hanna, Wernersson, Emma, Ulfsdottir, Hanna

“…Introduction Hyperemesis gravidarum affects 0.3%–3% of pregnant women each year and is the leading cause of hospitalization in early pregnancy. Previous…”
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Vertical InAs Nanowire Wrap Gate Transistors with ft > 7 GHz and fmax > 20 GHz by EGARD, M, JOHANSSON, S, JOHANSSON, A.-C, PERSSON, K.-M, DEY, A. W, BORG, B. M, THELANDER, C, WERNERSSON, L.-E, LIND, E

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Vertical Enhancement-Mode InAs Nanowire Field-Effect Transistor With 50-nm Wrap Gate by Thelander, C., FrobergFroberg, L.E., Rehnstedt, C., Samuelson, L., Wernersson, L.-E.

“…We present results on fabrication and dc characterization of vertical InAs nanowire wrap-gate field-effect transistor arrays with a gate length of 50 nm. The…”
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Al2O3/InAs metal-oxide-semiconductor capacitors on (100) and (111)B substrates by Wu, Jun, Lind, E., Timm, R., Hjort, Martin, Mikkelsen, A., Wernersson, L.-E.

“…The influence of InAs orientations and high-k oxide deposition conditions on the electrical and structural quality of Au/W/Al2O3/InAs metal-oxide-semiconductor…”
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Time-Resolved X‑ray Diffraction Investigation of the Modified Phonon Dispersion in InSb Nanowires by Jurgilaitis, A, Enquist, H, Andreasson, B. P, Persson, A. I. H, Borg, B. M, Caroff, P, Dick, K. A, Harb, M, Linke, H, Nüske, R, Wernersson, L.-E, Larsson, J

“…The modified phonon dispersion is of importance for understanding the origin of the reduced heat conductivity in nanowires. We have measured the phonon…”
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InSb Nanowire Field-Effect Transistors and Quantum-Dot Devices by Nilsson, H. A., Deng, M. T., Caroff, P., Thelander, C., Samuelson, L., Wernersson, L.-E, Xu, H. Q.

“…The authors present fabrication and electrical measurements of InSb nanowire field-effect transistors (FETs) and quantum dots. The devices are made on a SiO 2…”
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Analysis of strain and stacking faults in single nanowires using Bragg coherent diffraction imaging by Favre-Nicolin, V, Mastropietro, F, Eymery, J, Camacho, D, Niquet, Y M, Borg, B M, Messing, M E, Wernersson, L-E, Algra, R E, Bakkers, E P A M, Metzger, T H, Harder, R, Robinson, I K

“…Coherent diffraction imaging (CDI) on Bragg reflections is a promising technique for the study of three-dimensional (3D) composition and strain fields in…”
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Development of a Vertical Wrap-Gated InAs FET by Thelander, C., Rehnstedt, C., Froberg, L.E., Lind, E., Martensson, T., Caroff, P., Lowgren, T., Ohlsson, B.J., Samuelson, L., Wernersson, L.-E.

“…In this paper, we report on the development of a vertical wrap-gated field-effect transistor based on epitaxially grown InAs nanowires. We discuss some of the…”
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Deposition of HfO2 on InAs by atomic-layer deposition by WHEELER, D, WERNERSSON, L.-E, FROBERG, L, THELANDER, C, MIKKELSEN, A, WESTSTRATE, K.-J, SONNET, A, VOGEL, E. M, SEABAUGH, A

“…Metal-oxide-semiconductor (MOS) capacitors are formed on bulk InAs substrates by atomic-layer deposition (ALD) of HfO2. Prior to film growth, InAs substrates…”
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The impact of hetero-junction and oxide-interface traps on the performance of InAs/Si and InAs/GaAsSb nanowire tunnel FETs by Schenk, A., Sant, S., Memisevic, E., Wernersson, L-E, Moselund, K., Riel, H.

“…Fabricated InAs/Si and InAs/GaAsSb vertical nanowire tunnel FETs are analyzed by physics-based TCAD with emphasis on the impact of hetero-junction and…”
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Partially depleted SOI MOSFETs under uniaxial tensile strain by Wei Zhao, Jianli He, Belford, R.E., Wernersson, L.-E., Seabaugh, A.

“…The effects of tensile uniaxial strain on the DC performance of partially-depleted silicon-on-insulator n and p-channel MOSFETs as a function of orientation…”
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Core-Shell TFET Developments and TFET Limitations by Passlack, M., Ramvall, P., Vasen, T., Afzalian, A., Thelander, C., Dick, K.A., Wernersson, L.-E., Doornbos, G., Holland, M.

“…Tunneling field-effect transistors (TFET) based on a vertical gate-all-around (VGAA) nanowire (NW) architecture with a core-shell (CS) structure have been…”
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