Search Results - "Wenhsing Wu"

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  1. 1

    Circular and rectangular via holes formed in SiC via using ArF based UV excimer laser by Liu, L., Chang, C.Y., Wu, Wenhsing, Pearton, S.J., Ren, F.

    Published in Applied surface science (2011)
    “…Circular via holes with diameters of 10, 25, 50 and 70 μm and rectangular via holes with dimensions of 10 μm × 100 μm, 20 μm × 100 μm and 30 μm × 100 μm and…”
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    Journal Article
  2. 2

    UV excimer laser drilled high aspect ratio submicron via hole by Chen, K.H., Wu, Wenhsing, Chu, Byung Hwan, Chang, C.Y., Lin, Jenshan, Pearton, S.J., Norton, D.P., Ren, F.

    Published in Applied surface science (15-10-2009)
    “…We have demonstrated UV excimer laser drilled a submicron via hole with an entrance diameter of 300 nm inside a via hole with an entrance diameter of 5 μm. The…”
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    Journal Article
  3. 3

    Analysis and design of AlGaN/GaN HEMT resistive mixers by Chang, Tienyu, Wu, Wenhsing, Lin, Jenshan, Jang, Soohwan, Ren, Fan, Pearton, Stephen, Fitch, Robert, Gillespie, James

    Published in Microwave and optical technology letters (01-05-2007)
    “…In this article, resistive mixers using AlGaN/GaN high electron‐mobility transistor (HEMT) devices are examined. Models of the GaN devices in linear region…”
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    Journal Article
  4. 4

    Vital sign radars: Past, present, and future by Jenshan Lin, Wenhsing Wu

    Published in WAMICON 2014 (01-06-2014)
    “…The research of vital sign radars using microwave technologies grows rapidly in recent years. Such type of radars, whether using continuous-wave (CW),…”
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    Conference Proceeding
  5. 5

    Wireless Detection System for Glucose and pH Sensing in Exhaled Breath Condensate Using AlGaN/GaN High Electron Mobility Transistors by Byung Hwan Chu, Kang, B.S., Chang, C.Y., Ren, F., Goh, A., Sciullo, A., Wu, W., Lin, J., Gila, B.P., Pearton, S.J., Johnson, J.W., Piner, E.L., Linthicum, K.J.

    Published in IEEE sensors journal (01-01-2010)
    “…Peltier element cooling of ungated AlGaN/GaN high electron mobility transistors (HEMTs) is shown to be an effective method for condensing exhaled breath,…”
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    Journal Article
  6. 6

    Millimeter-wave monolithic barrier n-n+ diode grid frequency doubler by XIAOHUI QIN, DOMIER, C, LUHMANN, N. C, LIU, H.-X. L, CHUNG, E, SJOGREN, L, WENHSING WU

    Published in Applied physics letters (05-04-1993)
    “…A monolithic quasioptical frequency multiplier array, comprised of approximately 1760 Ga0.5Al0.5As/GaAs barrier n-n+ (BNN) diodes, has been successfully…”
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    Journal Article
  7. 7

    A monolithic diode array millimeter-wave beam transmittance controller by Sjogren, L.B., Liu, H.-X.L., Feng Wang, Liu, T., Xiao-Hui Qin, Wenhsing Wu, Chung, E., Domier, C.W., Luhmann, N.C.

    “…Amplitude control of transmitted millimeter-wave beams by monolithic Schottky diode arrays is demonstrated. An array containing 4800 diodes has demonstrated…”
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    Journal Article
  8. 8

    High-efficiency GaN/AlGaN HEMT oscillator operating at L-band by Jae Shin Kim, Wenhsing Wu, Jenshan Lin, Verma, A., Soohwan Jang, Ren, F., Pearton, S., Fitch, R., Gillespie, J.

    Published in 2006 Asia-Pacific Microwave Conference (01-12-2006)
    “…This paper presents a new design method to implement the high efficiency oscillator based on the AlGaN/GaN HEMT for the wireless power transmission (WPT)…”
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    Conference Proceeding
  9. 9

    Radar remote monitoring of vital signs by Changzhi Li, Cummings, J., Lam, J., Graves, E., Wenhsing Wu

    Published in IEEE microwave magazine (01-02-2009)
    “…Medical technology has improved remarkably over the past few generations, becoming more sophisticated and less invasive as the years progress. Now, with…”
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    Magazine Article
  10. 10

    A high efficiency class-F power amplifier using AIGaN/GaN HEMT by Ko, Sangwon, Wu, Wenhsing, Lin, Jenshan, Jang, Soohwan, Ren, Fan, Pearton, Stephen, Fitch, Robert, Gillespie, James

    Published in Microwave and optical technology letters (01-10-2006)
    “…This paper reports the development of a high efficiency and compact power amplifier using an AlGaN/GaN high electron mobility transistor (HEMT). The class‐F…”
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    Journal Article