Search Results - "Weng, You‐Chen"

Effect of High-Pressure GaN Nucleation Layer on the Performance of AlGaN/GaN HEMTs on Si Substrate by Weng, You-Chen, Hsiao, Ming-Yao, Lin, Chun-Hsiung, Lan, Yu-Pin, Chang, Edward-Yi

“…A high-pressure (HP) GaN nucleation layer (NL) was inserted between AlGaN buffer and an unintentionally doped (UID) GaN layer of an AlGaN/GaN HEMT on Si. The…”
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RF loss mechanisms in GaN‐based high‐electron‐mobility‐transistor on silicon: Role of an inversion channel at the AlN/Si interface by Luong, Tien Tung, Lumbantoruan, Franky, Chen, Yen‐Yu, Ho, Yen‐Teng, Weng, You‐Chen, Lin, Yueh‐Chin, Chang, Shane, Chang, Edward‐Yi

“…One of the epitaxial issues pertaining to the growth of AlGaN/GaN HEMTs on Si is the decrease of parasitic losses that can adversely impact the RF device…”
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Recent Progress of E‐mode Gallium Nitride Metal–Insulator–Semiconductor ‐High Electron Mobility Transistors with Hybrid Ferroelectric Charge Trap Gate (FEG‐HEMT) for Power Switching Applications by Wu, Jui-Sheng, Weng, You-Chen, Yang, Tsung-Ying, Wu, Chia-Hsun, Lee, Chih-Chieh, Iwai, Hiroshi, Chang, Edward Yi

“…Aluminum gallium nitride/gallium nitride (AlGaN/GaN) heterostructure devices have proven to be highly effective for high‐frequency power amplifiers and power…”
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Study of AlGaN/GaN High‐Electron‐Mobility Transistors on Si Substrate with Thick Copper‐Metallized Interconnects for Ka‐Band Applications by Lee, Ming-Wen, Lin, Yueh-Chin, Lai, Kuan-Hsien, Weng, You-Chen, Hsu, Heng-Tung, Chang, Edward Yi

“…Herein, the AlGaN/GaN high‐electron‐mobility transistors (HEMTs) on silicon substrates using thick copper‐metallized interconnects with Pt diffusion barrier…”
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Minimum Power Input Control for Class-E Amplifier Using Depletion-Mode Gallium Nitride High Electron Mobility Transistor by Weng, You-Chen, Wu, Chih-Chiang, Chang, Edward, Chieng, Wei-Hua

“…In this study, we implemented a depletion (D)-mode gallium nitride high electron mobility transistor (GaN HEMT, which has the advantage of having no body…”
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A Novel GaN:C Millimeter-Wave HEMT with AlGaN Electron-Blocking Layer by Weng, You-Chen, Lin, Yueh-Chin, Hsu, Heng-Tung, Kao, Min-Lu, Huang, Hsuan-Yao, Ueda, Daisuke, Ha, Minh-Thien-Huu, Yang, Chih-Yi, Maa, Jer-Shen, Chang, Edward-Yi, Dee, Chang-Fu

“…An AlGaN/GaN/Si high electron mobility transistor (HEMT) using a GaN:C buffer with a 2 nm AlGaN electron-blocking layer (EBL) is investigated for the first…”
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Buffer Traps Effect on GaN-on-Si High-Electron-Mobility Transistor at Different Substrate Voltages by Lin, Yuan, Kao, Min-Lu, Weng, You-Chen, Dee, Chang-Fu, Chen, Shih-Chen, Kuo, Hao-Chung, Lin, Chun-Hsiung, Chang, Edward-Yi

“…Substrate voltage (V ) effects on GaN-on-Si high electron mobility transistors (HEMTs) power application performance with superlattice transition layer…”
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Hf-Based and Zr-Based Charge Trapping Layer Engineering for E-Mode GaN MIS-HEMT Using Ferroelectric Charge Trap Gate Stack by Wu, Jui-Sheng, Lee, Chih-Chieh, Wu, Chia-Hsun, Huang, Cheng-Jun, Liang, Yan-Kui, Weng, You-Chen, Chang, Edward Yi

“…E-mode hybrid ferroelectric charge storage gate (FEG) GaN HEMTs have shown promising performances for future power GaN device applications. The FEG-HEMT…”
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Ferroelectric-like behavior in HfO2/Al2O3/AlN metal-insulator-semiconductor capacitor through AlN thermal stress by Kao, Min-Lu, Lin, Yuan, Weng, You-Chen, Dee, Chang-Fu, Chang, Edward Yi

“…By modulating the thermal stress during film growth, the strained aluminum nitride (AlN) thin films with ferroelectric-like behavior were successfully grown by…”
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InGaZnO Ferroelectric Thin-Film Transistor Using HfO₂/Al₂O₃/AlN Hybrid Gate Dielectric Stack With Ultra-Large Memory Window by Kao, Min-Lu, Liang, Yan-Kui, Lin, Yuan, Weng, You-Chen, Dee, Chang-Fu, Liu, Po-Tsun, Lee, Ching-Ting, Chang, Edward Yi

“…In this letter, HfO2/Al2O3/AlN hybrid stack capacitor with ferroelectric switching is experimentally demonstrated for the first time. The…”
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E-Mode GaN MIS-HEMT Using Ferroelectric Charge Trap Gate Stack With Low Dynamic On-Resistance and High Vth Stability by Field Plate Engineering by Wu, Jui-Sheng, Lee, Chih-Chieh, Wu, Chia-Hsun, Kao, Min-Lu, Weng, You-Chen, Yang, Chih-Yi, Luc, Quang Ho, Lee, Ching-Ting, Ueda, Daisuke, Chang, Edward Yi

“…A high-performance E-mode hybrid ferroelectric charge storage gate (FEG) GaN HEMT with an innovative source-connected field plate (SCFP) structure is reported…”
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E-Mode GaN MIS-HEMT Using Ferroelectric Charge Trap Gate Stack With Low Dynamic On-Resistance and High V th Stability by Field Plate Engineering by Wu, Jui-Sheng, Lee, Chih-Chieh, Wu, Chia-Hsun, Kao, Min-Lu, Weng, You-Chen, Yang, Chih-Yi, Luc, Quang Ho, Lee, Ching-Ting, Ueda, Daisuke, Chang, Edward Yi

“…A high-performance E-mode hybrid ferroelectric charge storage gate (FEG) GaN HEMT with an innovative source-connected field plate (SCFP) structure is reported…”
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Study of AlGaN/GaN High‐Electron‐Mobility Transistors on Si Substrate with Thick Copper‐Metallized Interconnects for Ka‐Band Applications by Lee, Ming-Wen, Lin, Yueh-Chin, Lai, Kuan-Hsien, Weng, You-Chen, Hsu, Heng-Tung, Chang, Edward Yi

“…High‐Electron‐Mobility Transistors In article number 2200536, Ming‐Wen Lee, Edward Yi Chang, and colleagues report on AlGaN/GaN HEMTs on silicon substrates…”
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Recent Progress of E‐mode Gallium Nitride Metal–Insulator–Semiconductor ‐High Electron Mobility Transistors with Hybrid Ferroelectric Charge Trap Gate (FEG‐HEMT) for Power Switching Applications by Wu, Jui-Sheng, Weng, You-Chen, Yang, Tsung-Ying, Wu, Chia-Hsun, Lee, Chih-Chieh, Iwai, Hiroshi, Chang, Edward Yi

“…Hybrid FEG‐HEMTs The high‐performance hybrid ferroelectric charge storage gate (FEG) GaN HEMT has gradually gained attention due to the concept being a useful…”
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Ferroelectric-like behavior in HfO 2 /Al 2 O 3 /AlN metal-insulator-semiconductor capacitor through AlN thermal stress by Kao, Min-Lu, Lin, Yuan, Weng, You-Chen, Dee, Chang-Fu, Chang, Edward Yi

“…Abstract By modulating the thermal stress during film growth, the strained aluminum nitride (AlN) thin films with ferroelectric-like behavior were successfully…”
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Threshold Voltage Instability of GaN HEMTs with Thin Barrier AlGaN Technology by Yang, Tsung-Ying, Wu, Jui-Sheng, Weng, You-Chen, Yang, Chih-Yi, Chang, Edward-Yi

“…In this work, the effect on threshold voltage (V th ) instability of AlGaN barriers using higher aluminum concentrations (29%) but only 5 nm will be discussed…”
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Investigation of TID effects on electrical characteristics of GaN MIS-HEMT with LPCVD-grown SiN passivation by Yang, Chih-Yi, Chung, Chin-Han, Weng, You-Chen, Wu, Jui-Sheng, Yang, Tsung-Ying, Chang, Edward-Yi

“…This study examines the impact of total ionizing dose (TID) effects on GaN on Si metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs)…”
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1kV Vertical Breakdown Voltage AlGaN/GaN HEMTs on Si with AlN and AlGaN/AlN Superlattice Buffer Engineering by Weng, You-Chen, Yang, Chin-Yi, Yang, Tsung-Ying, Chung, Chin-Han, Chiang, Tsung-Han, Tung, Fu-Chin, Lai, Shih-Hsiang, Yu, Hung-Wei, Chang, Edward Yi

“…In this study, we investigated the device characteristics of AlGaN/GaN High-Electron-Mobility Transistors (HEMTs) fabricated on 6-inch silicon substrates using…”
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The Effects of Al2O3 Interlayer on the Ferroelectric Behavior of Hf0.5Zr0.5O2 Thin Film for E-mode Ferroelectric Charge Trap Gate GaN HEMT by Wu, Jui-Sheng, Yang, Tsung-Ying, Weng, You-Chen, Yang, Chih-Yi, Du, Yu-Tung, Wei, Yi-Hsiang, Chang, Edward-Yi

“…This research primarily investigates the impact of adding an aluminum oxide (Al 2 O 3 ) interlayer between titanium nitride (TiN) capping layers on the…”
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Suppression of Total Dose Effects on the Performance of InAlGaN/GaN MIS-HEMT via Field Plate Implementation by Chang-Chien, Yi-En, Chung, Chin-Han, Yang, Chih-Yi, Ma, Cheng-Jun, Ye, Xiang-You, Weng, You-Chen, Chang, Edward Yi

“…In this study, quaternary InAlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) aimed for power applications were exposed to…”
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