Search Results - "Wendt, A.E."

High-voltage constraints for vacuum packaged microstructures by Wilson, C.G., Gianchandani, Y.B., Wendt, A.E.

“…In order to understand the details of high-field breakdown in microstructures that are vacuum packaged, a series of experiments are used to determine…”
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Striations in a radio frequency planar inductively coupled plasma by Stittsworth, J.A., Wendt, A.E.

“…Photographic evidence is presented for azimuthal structure in cylindrical radio frequency (RF) planar inductively coupled plasmas. Observations made in a high…”
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Fabrication of Polymeric Substrates with Well-Defined Nanometer-Scale Topography and Tailored Surface Chemistry by Kim, S.-R., Teixeira, A.I., Nealey, P.F., Wendt, A.E., Abbott, N.L.

“…Micromolding of polymers from nanopatterned silicon wafers leads to the preparation of surfaces with well‐defined nanometer‐scale topography and surface…”
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Sheath thickness evaluation for collisionless or weakly collisional bounded plasmas by Wang, S.-B., Wendt, A.E.

“…The widely used Child-Langmuir law for sheath thickness evaluation in semi-infinite collisionless plasmas makes the assumptions of quasi-neutrality (n/sub…”
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Novel Method of Ion Energy and Ion Energy Distribution Function Control at the Substrate during Plasma Processing by Want, H., Wendt, A.E.

“…Summary form only as given…”
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Basic phenomena in low pressure plasma processing discharges by Wendt, A.E.

“…Summary form only given. Reactive plasma processes have been and are being developed in many labs worldwide for a wide range of industrial applications…”
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Composition of ion flux and etch rates for Si and SiO/sub 2/ in high density fluorocarbon plasmas by Kirmse, K.H.R., Wendt, A.E., Breun, R.A.

“…Summary form only given. In plasma etching of semiconductors, chemically reactive species to the substrate are provided by both ions and neutrals in the…”
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The role of argon metastables in operation and uniformity of planar RF inductively coupled discharges by Pierre, A.A., Stewart, R.A., Stittsworth, J.A., Wendt, A.E.

“…Summary form only given, as follows. Measurements of argon metastable line densities along a radial chord in a cylindrical (20 cm D by 14 cm long) ICP…”
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Argon plasma uniformity in a low-pressure inductively coupled plasma source with planar coil by Beale, D.F., Kolobov, V.I., Stittsworth, J.A., Hitchon, W.N.G., Wendt, A.E.

“…Summary form only given. Plasma uniformity is crucial for material processing applications. We report the results of experimental and theoretical studies of…”
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Electromagnetic fields in a low-pressure planar inductively coupled plasma source by Meyer, J.A., Mau, R., Kolobov, V.I., Wendt, A.E.

“…Summary form only given. The results of experimental and theoretical studies of electromagnetic fields in a planar radio-frequency (13.56 MHz)…”
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Using absorption spectroscopy to determine the ionization fraction of copper in an ionized physical vapor deposition discharge by Foster, J.E., Wang, W.W., Wendt, A.E., Booske, J.H.

“…Summary form only given. Accompanying the steady increase in the number of components on a given integrated circuit is the increase in the aspect ratio of the…”
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Spatial profiles of electron and optical emission characteristics in a planar RF inductively coupled argon plasma by Wendt, A.E., Beale, D.F., Mahoney, L.J., Shohet, J.L.

“…Summary form only given. The authors report on an extensive spatial study of electron population characteristics and optical emission spectra of argon in a…”
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Spatial Profiles Of Plasma Properties In Planar Rf Inductive Discharges - 1) Role Of Chamber Length And 2) Anisotropy Of Electron Velocity Distributions by Mahoney, L.J., Wendt, A.E., Shohet, J.I.

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Several consequences of Ding's etch rate expression: ion beam etching, etch rate control and selectivity by Hershkowitz, N., Breun, R.A., Sarfaty, M., Kirmse, K.H., Wendt, A.E.

“…Summary form only given. Ding et al. (1996) have argued that the etch rate of SiO/sub 2/ by fluorocarbon plasma in high density-low pressure etch tools can be…”
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Characterization of a planar RF induction plasma source for polymer film deposition processes by Mahoney, L.J., Shohet, J.L., Wendt, A.E.

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Ion-cyclotron-resonance mass spectrometry with a microwave plasma source by Friedmann, J.B., Shohet, J.L., Wendt, A.E.

“…The feasibility of coupling an electron-cyclotron-resonance (ECR) plasma-processing reactor directly to an omegatron mass spectrometer is demonstrated. The ECR…”
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