Search Results - "Wen-Tai Lu"

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  1. 1

    The characteristics of hole trapping in HfO2∕SiO2 gate dielectrics with TiN gate electrode by Lu, Wen-Tai, Lin, Po-Ching, Huang, Tiao-Yuan, Chien, Chao-Hsin, Yang, Ming-Jui, Huang, Ing-Jyi, Lehnen, Peer

    Published in Applied physics letters (18-10-2004)
    “…The characteristics of charge trapping during constant voltage stress in an n-type metal–oxide–semiconductor capacitor with HfO2∕SiO2 gate stack and TiN gate…”
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    Journal Article
  2. 2

    Improved reliability of HfO/sub 2//SiON gate stack by fluorine incorporation by Wen-Tai Lu, Chao-Hsin Chiein, Wen-Ting Lan, Tsung-Chieh Lee, Lehnen, P., Tiao-Yuan Huang

    Published in IEEE electron device letters (01-04-2006)
    “…Effects of fluorine (F) incorporation on the reliabilities of pMOSFETs with HfO/sub 2//SiON gate stacks have been studied. In this letter, fluorine was…”
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    Journal Article
  3. 3
  4. 4

    Quantifying the ambient formaldehyde sources utilizing tracers by Li, Mei, Shao, Min, Li, Ling-Yu, Lu, Si-Hua, Chen, Wen-Tai, Wang, Chen

    Published in Chinese chemical letters (01-11-2014)
    “…Formaldehyde(HCHO) is one of the most important intermediate products of atmospheric photochemical reactions in the troposphere, therefore understanding of…”
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    Journal Article
  5. 5

    Improved reliability of HfO sub(2)/SiON gate stack by fluorine incorporation by Lu, Wen-Tai, Chiein, Chao-Hsin, Lan, Wen-Ting, Lee, Tsung-Chieh, Lehnen, P, Huang, Tiao-Yuan

    Published in IEEE electron device letters (01-01-2006)
    “…Effects of fluorine (F) incorporation on the reliabilities of pMOSFETs with HfO sub(2)/SiON gate stacks have been studied. In this letter, fluorine was…”
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    Journal Article
  6. 6

    Improvements on Electrical Characteristics of p-Channel Metal–Oxide–Semiconductor Field Effect Transistors with HfO 2 Gate Stacks by Post Deposition N 2 O Plasma Treatment by Lu, Wen-Tai, Chien, Chao-Hsin, Lan, Wen-Ting, Lee, Tsung-Chieh, Yang, Ming-Jui, Shen, Shih-Wen, Lehnen, Peer, Huang, Tiao-Yuan

    Published in Japanese Journal of Applied Physics (01-11-2005)
    “…In this work, we found that employing a post deposition N 2 O plasma treatment following the deposition of HfO 2 film can effectively improve the electrical…”
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    Journal Article
  7. 7

    Evidence of coal combustion contribution to ambient VOCs during winter in Beijing by Wang, Ming, Shao, Min, Lu, Si-Hua, Yang, Yu-Dong, Chen, Wen-Tai

    Published in Chinese chemical letters (01-09-2013)
    “…Volatile organic compounds (VOCs) play ,an important role in ozone and secondary organic aerosol (SOA) formation, but VOCs sources during winter are not fully…”
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    Journal Article
  8. 8

    Increase of ambient formaldehyde in Beijing and its implication for VOC reactivity by Zhang, Qian, Shao, Min, Li, Yang, Lu, Si Hua, Yuan, Bin, Chen, Wen Tai

    Published in Chinese chemical letters (01-09-2012)
    “…Influencing atmospheric OH radical budget and tropospheric ozone production, ambient formaldehyde (HCHO) is one of the key oxygenated volatile organic…”
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    Journal Article