Search Results - "Wellmann, P.J."

Optimization of KOH etching parameters for quantitative defect recognition in n- and p-type doped SiC by Sakwe, S.A., Müller, R., Wellmann, P.J.

“…We have developed a KOH-based defect etching procedure for silicon carbide (SiC), which comprises in situ temperature measurement and control of melt…”
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Application of optical absorbance for the investigation of electronic and structural properties of sol-gel processed TiO2 films by WELTE, Andrea, WALDAUF, Christoph, BRABEC, Christoph, WELLMANN, Peter J

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Sublimation growth of bulk 3C-SiC using 3C-SiC-on-Si (100) seeding layers by Schuh, P., Schöler, M., Wilhelm, M., Syväjärvi, M., Litrico, G., La Via, F., Mauceri, M., Wellmann, P.J.

“…•A transfer of high quality 3C-SiC-on-Si to 3C-SiC-on-SiC was developed.•A subsequent growth of the transferred seeds was conducted.•Layers of up to 850μm…”
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3C-SiC bulk sublimation growth on CVD hetero-epitaxial seeding layers by Schuh, P., Litrico, G., La Via, F., Mauceri, M., Wellmann, P.J.

“…We report on the growth of bulk 3C-SiC by sublimation on epitaxial seeding layers (3CSiC/Si) from chemical vapor deposition. We have reached a materials…”
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Erratum to “Optimization of KOH etching parameters for quantitative defect recognition in n- and p-type doped SiC”: [J. Crystal Growth 289 (2006) 520–526] by Sakwe, S.A., Müller, R., Wellmann, P.J.

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Numerical modeling and experimental verification of modified-PVT crystal growth of SiC by Wellmann, P.J., Pons, M.

“…This work focuses on numerical modeling of temperature field and mass transport in a so-called modified physical vapor transport (M-PVT) growth configuration,…”
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Vapor growth of SiC bulk crystals and its challenge of doping by Wellmann, P.J., Müller, R., Queren, D., Sakwe, S.A., Pons, M.

“…The paper reviews the so-called Modified-PVT (M-PVT) technique which combines the state of the art PVT technique for SiC crystal growth with physical and…”
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Determination of doping levels and their distribution in SiC by optical techniques by Wellmann, P.J., Weingärtner, R.

“…We review an absorption measurement based characterization method for the determination of doping levels and doping level distribution in SiC which is…”
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Aluminum p-type doping of silicon carbide crystals using a modified physical vapor transport growth method by Straubinger, T.L., Bickermann, M., Weingärtner, R., Wellmann, P.J., Winnacker, A.

“…We report the development of a modified physical vapor transport (PVT) growth setup for the improved aluminum p-type doping of silicon carbide (SiC) single…”
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Analysis on defect generation during the SiC bulk growth process by Hofmann, D., Schmitt, E., Bickermann, M., Kölbl, M., Wellmann, P.J., Winnacker, A.

“…SiC crystals (1.2–1.5′′ diameter) were grown by the modified Lely technique on seeds with different micropipe densities in order to study the defect generation…”
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In situ visualization and analysis of silicon carbide physical vapor transport growth using digital X-ray imaging by Wellmann, P.J, Bickermann, M, Hofmann, D, Kadinski, L, Selder, M, Straubinger, T.L, Winnacker, A

“…Using digital X-ray imaging we have investigated the on-going processes during physical vapor transport growth of SiC. A high-resolution and high-speed X-ray…”
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Diffraction experiments with high-energy X-rays during PVT growth of SiC by Hock, R.C., Konias, K., Stockmeier, M., Hens, P., Wellmann, P.J., Magerl, A.

“…Abstract only…”
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On the preparation of semi-insulating SiC bulk crystals by the PVT technique by Bickermann, M., Hofmann, D., Straubinger, T.L., Weingärtner, R., Wellmann, P.J., Winnacker, A.

“…Vanadium in SiC can act as a deep acceptor compensating residual nitrogen ( ΔE≈0.8 eV) or as a deep donor compensating p-type (Al/B) impurities ( ΔE≈1.6 eV)…”
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Evaluation of n-type doping of 4H-SiC and n-/p-type doping of 6H-SiC using absorption measurements by Wellmann, P.J., Bushevoy, S., Weingärtner, R.

“…A non-destructive, absorption measurement based optical method has been developed in order to determine doping type (n- or p-type), doping level and doping…”
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Impact of source material on silicon carbide vapor transport growth process by Wellmann, P.J., Hofmann, D., Kadinski, L., Selder, M., Straubinger, T.L., Winnacker, A.

“…We have studied the impact of morphological changes of the source material during physical vapor transport growth of silicon carbide (SiC). Digital X-ray…”
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Optical quantitative determination of doping levels and their distribution in SiC by Wellmann, P.J., Weingärtner, R., Bickermann, M., Straubinger, T.L., Winnacker, A.

“…We report the development of an absorption measurement-based characterization tool for the quantitative determination of doping levels and their lateral…”
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Investigation of mass transport during PVT growth of SiC by 13C labeling of source material by Herro, Z.G., Wellmann, P.J., Püsche, R., Hundhausen, M., Ley, L., Maier, M., Masri, P., Winnacker, A.

“…We have investigated experimentally mass transport during physical vapor transport growth of silicon carbide (SiC). 13C was used as trace in order to determine…”
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Absorption mapping of doping level distribution in n-type and p-type 4H-SiC and 6H-SiC by Weingärtner, R., Bickermann, M., Bushevoy, S., Hofmann, D., Rasp, M., Straubinger, T.L., Wellmann, P.J., Winnacker, A.

“…An optical characterization method for determination of spatial doping level concentration in n-type 4H-SiC and p-type 6H-SiC is discussed. The absorption…”
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Suppression of feeding induced by phenylephrine microinjections within the paraventricular hypothalamus in rats by Wellman, P J, Davies, B T

“…Rats were treated with the alpha-2 agonist clonidine (4, 20 and 50 nMol) and with the alpha-1 agonist 1-phenylephrine (50, 100, 200 and 400 nMol)…”
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