Search Results - "Wellenius, Patrick"

Room temperature pulsed laser deposited indium gallium zinc oxide channel based transparent thin film transistors by Suresh, Arun, Wellenius, Patrick, Dhawan, Anuj, Muth, John

“…Indium gallium zinc oxide deposited by pulsed laser deposition at room temperature was used as a channel layer to fabricate transparent thin film transistors…”
Get full text

Transparent, high mobility InGaZnO thin films deposited by PLD by Suresh, Arun, Gollakota, Praveen, Wellenius, Patrick, Dhawan, Anuj, Muth, John F.

“…Transparent oxide semiconductor, InGaZnO, thin films were prepared by pulsed laser deposition at room temperature. The carrier concentration was found to vary…”
Get full text

An Amorphous Indium-Gallium-Zinc-Oxide Active Matrix Electroluminescent Pixel by Wellenius, P., Suresh, A., Haojun Luo, Lunardi, L.M., Muth, J.F.

“…In this study, an active matrix pixel was fabricated and characterized using indium gallium zinc oxide (IGZO) thin-film transistors and a novel…”
Get full text

Transparent indium gallium zinc oxide transistor based floating gate memory with platinum nanoparticles in the gate dielectric by Suresh, Arun, Novak, Steven, Wellenius, Patrick, Misra, Veena, Muth, John F.

“…A transparent memory device has been developed based on an indium gallium zinc oxide thin film transistor by incorporating platinum nanoparticles in the gate…”
Get full text

Transparent IGZO-Based Logic Gates by Haojun Luo, Wellenius, P., Lunardi, L., Muth, J. F.

“…Optically transparent indium-gallium-zinc-oxide-based nand and nor gates and inverters were fabricated and characterized using transistors deposited at room…”
Get full text

Fast All-Transparent Integrated Circuits Based on Indium Gallium Zinc Oxide Thin-Film Transistors by Suresh, A., Wellenius, P., Baliga, V., Luo, H., Lunardi, L.M., Muth, J.F.

“…We describe the fabrication and characterization of visible transparent small-scale indium gallium zinc oxide (IGZO) integrated circuits. The IGZO channel and…”
Get full text

Effect of oxygen pressure on the structure and luminescence of Eu‐doped Gd 2 O 3 thin films by Wellenius, Patrick, Smith, Eric R., Wu, Pae C, Everitt, Henry O., Muth, John F.

“…Europium‐doped gadolinium oxide (Gd 2 O 3 ) thin films were deposited on sapphire substrates by pulsed laser deposition (PLD). The effect of oxygen pressure…”
Get full text

Spectra and energy levels of Eu3+ in cubic phase Gd2O3 by Smith, Eric R., Gruber, John B., Wellenius, Patrick, Muth, John F., Everitt, Henry O.

“…In pulsed laser deposition of the sesquioxide semiconductor Gd2O3, adjusting the chamber oxygen pressure controls the crystalline structure of the host. This…”
Get full text

Effect of oxygen pressure on the structure and luminescence of Eu-doped Gd2O3 thin films by Wellenius, Patrick, Smith, Eric R., Wu, Pae C, Everitt, Henry O., Muth, John F.

“…Europium‐doped gadolinium oxide (Gd2O3) thin films were deposited on sapphire substrates by pulsed laser deposition (PLD). The effect of oxygen pressure during…”
Get full text

Amorphous InGaZnO logic gates for transparent electronics by Haojun Luo, Wellenius, Patrick, Lunardi, Leda, Muth, John F

“…In this paper we present, transparent logic showing good performance from inverters, NAND and NOR gates, all deposited at room temperature. The significance of…”
Get full text

Origins of Parasitic Emissions from 353 nm AlGaN-based Ultraviolet Light Emitting Diodes over SiC Substrates by Park, Ji-Soo, Fothergill, Daryl W., Wellenius, Patrick, Bishop, Seann M., Muth, John F., Davis, Robert F.

Get full text

High performance transparent thin film transistors based on indium gallium zinc oxide as the channel material by Suresh, A., Wellenius, P., Muth, J.F.

“…The fabrication of high performance amorphous indium gallium zinc oxide (IGZO) transparent thin film transistors (TTFT) and their bias stress stability is…”
Get full text

Rare-Earth Doped Wide Bandgap Oxide Semiconductor Materials and Devices by Wellenius, Ian Patrick

“…Amorphous oxide semiconductors composed of indium gallium zinc oxide are transparent to visible light and have higher electron mobilities than conventional…”
Get full text

High Mobility Indium Gallium Zinc Oxide for Transparent Conductive Contacts and Thin Film Transistors by Suresh, A., Wellenius, P., Muth, J.F.

“…Thin amorphous films of high electron mobility, optically transparent indium gallium zinc oxide (IGZO) were deposited by pulsed laser deposition. Electrical…”
Get full text

Rare-Earth Doped Wide Bandgap Oxide Semiconductor Materials and Devices by Wellenius, Ian Patrick

“…Amorphous oxide semiconductors composed of indium gallium zinc oxide are transparent to visible light and have higher electron mobilities than conventional…”
Get full text