Search Results - "Weisheng Zhao"

High Speed, High Stability and Low Power Sensing Amplifier for MTJ/CMOS Hybrid Logic Circuits by Weisheng Zhao, Chappert, C., Javerliac, V., Noziere, J.-P.

“…Densely embedding Magnetic Tunnel Junctions (MTJ) in CMOS logic circuits is considered as one potentially powerful solution to bring non volatility, instant…”
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Spintronics for Energy- Efficient Computing: An Overview and Outlook by Guo, Zongxia, Yin, Jialiang, Bai, Yue, Zhu, Daoqian, Shi, Kewen, Wang, Gefei, Cao, Kaihua, Zhao, Weisheng

“…From the discovery of giant magnetoresistance (GMR) to tunnel magnetoresistance (TMR), their subsequent application in large capacity hard disk drives (HDDs)…”
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Magnetic skyrmion transistor: skyrmion motion in a voltage-gated nanotrack by Zhang, Xichao, Zhou, Yan, Ezawa, Motohiko, Zhao, G. P., Zhao, Weisheng

“…Magnetic skyrmions are localized and topologically protected spin configurations, which are of both fundamental and applied interests for future electronics…”
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Exploiting Carbon Nanotube FET and Magnetic Tunneling Junction for Near-Memory-Computing Paradigm by Yang, Nan, Wang, Xinhe, Lin, Xiaoyang, Zhao, Weisheng

“…The traditional von Neumann computing architecture based on metal-oxide field-effect-transistors (MOSFETs) is more and more incompetent for the increasing…”
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Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance by Wang, Mengxing, Cai, Wenlong, Cao, Kaihua, Zhou, Jiaqi, Wrona, Jerzy, Peng, Shouzhong, Yang, Huaiwen, Wei, Jiaqi, Kang, Wang, Zhang, Youguang, Langer, Jürgen, Ocker, Berthold, Fert, Albert, Zhao, Weisheng

“…Perpendicular magnetic tunnel junctions based on MgO/CoFeB structures are of particular interest for magnetic random-access memories because of their excellent…”
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Ultrafast Magnetization Manipulation Using Single Femtosecond Light and Hot‐Electron Pulses by Xu, Yong, Deb, Marwan, Malinowski, Grégory, Hehn, Michel, Zhao, Weisheng, Mangin, Stéphane

“…Current‐induced magnetization manipulation is a key issue for spintronic applications. This manipulation must be fast, deterministic, and nondestructive in…”
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Voltage Controlled Magnetic Skyrmion Motion for Racetrack Memory by Kang, Wang, Huang, Yangqi, Zheng, Chentian, Lv, Weifeng, Lei, Na, Zhang, Youguang, Zhang, Xichao, Zhou, Yan, Zhao, Weisheng

“…Magnetic skyrmion, vortex-like swirling topologically stable spin configurations, is appealing as information carrier for future nanoelectronics, owing to the…”
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Long-distance propagation of short-wavelength spin waves by Liu, Chuanpu, Chen, Jilei, Liu, Tao, Heimbach, Florian, Yu, Haiming, Xiao, Yang, Hu, Junfeng, Liu, Mengchao, Chang, Houchen, Stueckler, Tobias, Tu, Sa, Zhang, Youguang, Zhang, Yan, Gao, Peng, Liao, Zhimin, Yu, Dapeng, Xia, Ke, Lei, Na, Zhao, Weisheng, Wu, Mingzhong

“…Recent years have witnessed a rapidly growing interest in exploring the use of spin waves for information transmission and computation toward establishing a…”
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Stateful Reconfigurable Logic via a Single-Voltage-Gated Spin Hall-Effect Driven Magnetic Tunnel Junction in a Spintronic Memory by He Zhang, Wang Kang, Lezhi Wang, Wang, Kang L., Weisheng Zhao

“…Stateful in-memory logic (IML) is a promising paradigm to realize the unity of data storage and processing in the same die, exhibiting great feasibility to…”
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Analytical Macrospin Modeling of the Stochastic Switching Time of Spin-Transfer Torque Devices by Vincent, Adrien F., Locatelli, Nicolas, Klein, Jacques-Olivier, Zhao, Weisheng S., Galdin-Retailleau, Sylvie, Querlioz, Damien

“…Owing to their nonvolatility, outstanding endurance, high write and read speeds, and CMOS process compatibility, spin-transfer torque magnetoresistive memories…”
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Field-free spin-orbit torque-induced switching of perpendicular magnetization in a ferrimagnetic layer with a vertical composition gradient by Zheng, Zhenyi, Zhang, Yue, Lopez-Dominguez, Victor, Sánchez-Tejerina, Luis, Shi, Jiacheng, Feng, Xueqiang, Chen, Lei, Wang, Zilu, Zhang, Zhizhong, Zhang, Kun, Hong, Bin, Xu, Yong, Zhang, Youguang, Carpentieri, Mario, Fert, Albert, Finocchio, Giovanni, Zhao, Weisheng, Khalili Amiri, Pedram

“…Current-induced spin-orbit torques (SOTs) are of interest for fast and energy-efficient manipulation of magnetic order in spintronic devices. To be…”
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Skyrmion-based artificial synapses for neuromorphic computing by Song, Kyung Mee, Jeong, Jae-Seung, Pan, Biao, Zhang, Xichao, Xia, Jing, Cha, Sunkyung, Park, Tae-Eon, Kim, Kwangsu, Finizio, Simone, Raabe, Jörg, Chang, Joonyeon, Zhou, Yan, Zhao, Weisheng, Kang, Wang, Ju, Hyunsu, Woo, Seonghoon

“…Magnetic skyrmions are topologically protected spin textures that have nanoscale dimensions and can be manipulated by an electric current. These properties…”
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Modeling and Exploration of the Voltage-Controlled Magnetic Anisotropy Effect for the Next-Generation Low-Power and High-Speed MRAM Applications by Kang, Wang, Ran, Yi, Zhang, Youguang, Lv, Weifeng, Zhao, Weisheng

“…Spin transfer torque magnetic random access memory (STT-MRAM) has been widely regarded as a potential nonvolatile memory candidate in the next-generation…”
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Robust Ultra-Low Power Non-Volatile Logic-in-Memory Circuits in FD-SOI Technology by Hao Cai, You Wang, De Barros Naviner, Lirida Alves, Weisheng Zhao

“…In the upcoming internet of things (IoT) era, spin transfer torque magnetic tunnel junction (STT-MTJ) based non-volatile (NV) memory and circuits for IoT nodes…”
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A compact skyrmionic leaky-integrate-fire spiking neuron device by Chen, Xing, Kang, Wang, Zhu, Daoqian, Zhang, Xichao, Lei, Na, Zhang, Youguang, Zhou, Yan, Zhao, Weisheng

“…Neuromorphic computing, which relies on a combination of a large number of neurons massively interconnected by an even larger number of synapses, has been…”
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In-Memory Processing Paradigm for Bitwise Logic Operations in STT-MRAM by Kang, Wang, Wang, Haotian, Wang, Zhaohao, Zhang, Youguang, Zhao, Weisheng

“…In the current big data era, the memory wall issue between the processor and the memory becomes one of the most critical bottlenecks for conventional…”
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Reconfigurable Codesign of STT-MRAM Under Process Variations in Deeply Scaled Technology by Wang Kang, Liuyang Zhang, Klein, Jacques-Olivier, Youguang Zhang, Ravelosona, Dafine, Weisheng Zhao

“…Recently, spin-transfer torque magnetic random access memory (STT-MRAM) has been considered as a promising universal memory candidate for future memory and…”
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Room temperature energy-efficient spin-orbit torque switching in two-dimensional van der Waals Fe3GeTe2 induced by topological insulators by Wang, Haiyu, Wu, Hao, Zhang, Jie, Liu, Yingjie, Chen, Dongdong, Pandey, Chandan, Yin, Jialiang, Wei, Dahai, Lei, Na, Shi, Shuyuan, Lu, Haichang, Li, Peng, Fert, Albert, Wang, Kang L., Nie, Tianxiao, Zhao, Weisheng

“…Two-dimensional (2D) ferromagnetic materials with unique magnetic properties have great potential for next-generation spintronic devices with high flexibility,…”
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Field-free switching of a perpendicular magnetic tunnel junction through the interplay of spin–orbit and spin-transfer torques by Wang, Mengxing, Cai, Wenlong, Zhu, Daoqian, Wang, Zhaohao, Kan, Jimmy, Zhao, Zhengyang, Cao, Kaihua, Wang, Zilu, Zhang, Youguang, Zhang, Tianrui, Park, Chando, Wang, Jian-Ping, Fert, Albert, Zhao, Weisheng

“…Magnetization switching in magnetic tunnel junctions using spin-transfer torque and spin–orbit torque is key to the development of future spintronic memories…”
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Orbitronics: light-induced orbital currents in Ni studied by terahertz emission experiments by Xu, Yong, Zhang, Fan, Fert, Albert, Jaffres, Henri-Yves, Liu, Yongshan, Xu, Renyou, Jiang, Yuhao, Cheng, Houyi, Zhao, Weisheng

“…Orbitronics is based on the use of orbital currents as information carriers. Orbital currents can be generated from the conversion of charge or spin currents,…”
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