Search Results - "Weikle, Robert"

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  1. 1

    Thin film lithium niobate electro-optic modulator with terahertz operating bandwidth by Mercante, Andrew J, Shi, Shouyuan, Yao, Peng, Xie, Linli, Weikle, Robert M, Prather, Dennis W

    Published in Optics express (28-05-2018)
    “…We present a thin film crystal ion sliced (CIS) LiNbO phase modulator that demonstrates an unprecedented measured electro-optic (EO) response up to 500 GHz…”
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    Journal Article
  2. 2

    F Band Distributed Active Transformer Power Amplifier Achieving 12 Gb/s in InP 130-nm HBT by Zhang, Linsheng, Iyer, Vinay, Sheth, Jay R., Xie, Linli, Weikle, Robert M., Bowers, Steven M.

    “…This work demonstrates a compact, low-loss distributed active transformer (DAT) for 8-to-1 power combining at 120 GHz. Using the DAT as an output matching…”
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    Journal Article
  3. 3

    SuperGaN: Synthesis of NbTiN/GaN/NbTiN Tunnel Junctions by Cyberey, Michael, Hinton, Scott, Moore, Christopher, Weikle, Robert M., Lichtenberger, Arthur W.

    “…Nb-based circuits have broad applications in quantum-limited photon detectors, low-noise parametric amplifiers, superconducting digital logic circuits, and…”
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    Journal Article
  4. 4

    Measurement and Extraction of Parasitic Parameters of Quasi-Vertical Schottky Diodes at Submillimeter Wavelengths by Nadri, Souheil, Xie, Linli, Jafari, Masoud, Bauwens, Matthew F., Arsenovic, Alexander, Weikle, Robert M.

    “…This letter reports on a method for extracting parasitic equivalent-circuit model parameters at submillimeter-wave frequencies. The devices investigated are…”
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    Journal Article
  5. 5

    A Broadband Quasi-Optical Terahertz Detector Utilizing a Zero Bias Schottky Diode by Lei Liu, Hesler, J L, Haiyong Xu, Lichtenberger, A W, Weikle, R M

    “…A quasi-optical broadband terahertz detector using a zero bias Schottky diode mounted on a self-complimentary sinuous antenna has been developed. Design and…”
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    Journal Article
  6. 6

    Silicon-on-Insulator Substrates as a Micromachining Platform for Advanced Terahertz Circuits by Scott Barker, N., Bauwens, Matthew, Lichtenberger, Arthur, Weikle, Robert

    Published in Proceedings of the IEEE (01-06-2017)
    “…This paper presents a comprehensive overview of the development and utilization of a micromachined silicon-on-insulator (SOI) fabrication process that has…”
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    Journal Article
  7. 7

    NbTiN/AlN/NbTiN SIS Junctions Realized by Reactive Bias Target Ion Beam Deposition by Cyberey, Michael, Farrahi, Tannaz, Lu, Jiwei, Kerr, Anthony, Weikle, Robert M., Lichtenberger, Arthur W.

    “…The current state-of-the-art approach for superconductor-insulator-superconductor (SIS) junction fabrication is based on magnetron sputtering and the Gurvitch…”
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    Journal Article
  8. 8

    160 GHz Balanced Frequency Quadruplers Based on Quasi-Vertical Schottky Varactors Integrated on Micromachined Silicon by Alijabbari, Naser, Bauwens, Matthew F., Weikle, Robert M.

    “…This work reports on an integrated frequency quadrupler operating at 160 GHz with maximum efficiency of 30% and corresponding output power of 70 mW. The…”
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    Journal Article
  9. 9

    A 15.3-dBm, 18.3% PAE F-Band Power Amplifier in 130-nm InP HBT With Modulation Measurements by Iyer, Vinay, Sheth, Jay, Zhang, Linsheng, Weikle, Robert M., Bowers, Steven M.

    “…A scalable platform for modulation measurements at millimeter-and submillimeter-wave frequencies is presented and demonstrated at 121 GHz. The system is used…”
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    Journal Article
  10. 10

    A W-Band Micromachined On-Wafer Probe With Integrated Balun for Characterization of Differential Circuits by Chunhu Zhang, Bauwens, Matthew, Barker, N. Scott, Weikle, Robert M., Lichtenberger, Arthur W.

    “…Differential circuits are commonly used for millimeter-wave monolithic integrated circuits such as amplifiers and voltage-controlled oscillators. The…”
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    Journal Article
  11. 11

    A Phase Conjugator Based on Fourth-Order Subharmonically Pumped Mixers by Iyer, Vinay, Widmann, Dustin, Moore, Christopher, Bauwens, Matthew F., Bowers, Steven M., Weikle, Robert M.

    “…A new phase conjugator circuit architecture suitable for retrodirective array applications is described and demonstrated. The architecture is based on…”
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    Journal Article
  12. 12

    Thermal Characterization of Quasi-Vertical GaAs Schottky Diodes Integrated on Silicon by Nadri, Souheil, Moore, Christopher M., Sauber, Noah D., Xie, Linli, Cyberey, Michael E., Gaskins, John T., Lichtenberger, Arthur. W., Scott Barker, N., Hopkins, Patrick E., Zebarjadi, Mona, Weikle, Robert M.

    Published in IEEE transactions on electron devices (01-01-2019)
    “…This paper presents the first thermal characterization of terahertz quasi-vertical GaAs Schottky diodes integrated on silicon. The devices are characterized…”
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    Journal Article
  13. 13

    A Tunable 240-290 GHz Waveguide Enclosed 2-D Grid HBV Frequency Tripler by Dahlback, Robin, Vukusic, Josip, Weikle II, Robert M., Stake, Jan

    “…This paper presents a high-power 240-290 GHz waveguide enclosed two-dimensional (2-D) grid heterostructure barrier varactor (HBV) frequency multiplier. A 35 mW…”
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    Journal Article
  14. 14

    Detachable Terahertz Chip-to-Chip Interconnectors by Tsao, Han-Yu, Wang, Yuxin, Weikle, Robert M., Lichtenberger, Arthur W., Barker, Nicolas Scott

    “…This paper presents the design, simulation, and measurement of a detachable chip-to-chip interconnect operating from 140 to 220 GHz (the WR5.1 band). The…”
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    Conference Proceeding
  15. 15

    Optical Spectroscopic Study of AlN-Based SIS Devices Grown by Inductively Coupled Plasma by Farrahi, Tannaz, Cyberey, Michael, Eller, Michael B., Zhang, Jian Z., Jie Wang, Weikle, Robert M., Lichtenberger, Arthur W.

    “…High-quality Nb-based superconductor-insulator-superconductor (SIS) junctions with aluminum oxide tunnel barriers grown from Al overlayers are broadly reported…”
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    Journal Article
  16. 16

    Opening the terahertz window with integrated diode circuits by Crowe, T.W., Bishop, W.L., Porterfield, D.W., Hesler, J.L., Weikle, R.M.

    Published in IEEE journal of solid-state circuits (01-10-2005)
    “…The terahertz region of the electromagnetic spectrum, spanning from 100 GHz through 10 THz, is of increasing importance for a wide range of scientific,…”
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    Journal Article Conference Proceeding
  17. 17

    Growth and Characterization of NbTiN Films Synthesized by Reactive Bias Target Ion Beam Deposition (RBTIBD) by Cyberey, Michael E., Farrahi, Tannaz, Eller, Michael, Lu, Jiwei, Weikle, Robert M., Noroozian, Omid, Lichtenberger, Arthur W.

    “…High energy gap Nb-based superconducting alloys with low normal state resistivity are fundamentally important for realization of low-loss high frequency…”
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    Journal Article
  18. 18

    Electronic Calibration for Submillimeter-Wave On-Wafer Scattering Parameter Measurements Using Schottky Diodes by Xie, Linli, Bauwens, Matthew F., Nadri, Souheil, Arsenovic, Alexander, Cyberey, Michael E., Lichtenberger, Arthur W., Barker, Nicholas Scott, Weikle, Robert M.

    “…A proof-of-concept demonstration of on-wafer electronic calibration in the submillimeter-wave band (325-500 GHz) is presented. A GaAs Schottky diode shunting a…”
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    Journal Article
  19. 19

    A Dual-Band Micromachined On-Wafer Probe with Integrated Diplexer for Ultra-Broadband Measurements to 220 GHz by Bauwens, Matthew F., Scott Barker, N., Boes, Florian, Cyberey, Michael E., Weikle, Robert M., Zwick, Thomas, Lichtenberger, Arthur W.

    “…This work presents a micromachined dual-band probe for ultra-broadband single-sweep measurements to 220 GHz. The probe features both WR-5.1 waveguide and 1.0…”
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    Conference Proceeding
  20. 20

    Improved Micromachined Terahertz On-Wafer Probe Using Integrated Strain Sensor by Qiang Yu, Bauwens, Matthew F., Chunhu Zhang, Lichtenberger, Arthur W., Weikle, Robert M., Barker, N. Scott

    “…This paper introduces an improved method for monitoring and controlling the contact condition of terahertz on-wafer probes to enhance the measurement…”
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    Journal Article