Search Results - "Weikle, Robert"
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Thin film lithium niobate electro-optic modulator with terahertz operating bandwidth
Published in Optics express (28-05-2018)“…We present a thin film crystal ion sliced (CIS) LiNbO phase modulator that demonstrates an unprecedented measured electro-optic (EO) response up to 500 GHz…”
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2
F Band Distributed Active Transformer Power Amplifier Achieving 12 Gb/s in InP 130-nm HBT
Published in IEEE transactions on microwave theory and techniques (01-03-2024)“…This work demonstrates a compact, low-loss distributed active transformer (DAT) for 8-to-1 power combining at 120 GHz. Using the DAT as an output matching…”
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3
SuperGaN: Synthesis of NbTiN/GaN/NbTiN Tunnel Junctions
Published in IEEE transactions on applied superconductivity (01-05-2024)“…Nb-based circuits have broad applications in quantum-limited photon detectors, low-noise parametric amplifiers, superconducting digital logic circuits, and…”
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4
Measurement and Extraction of Parasitic Parameters of Quasi-Vertical Schottky Diodes at Submillimeter Wavelengths
Published in IEEE microwave and wireless components letters (01-07-2019)“…This letter reports on a method for extracting parasitic equivalent-circuit model parameters at submillimeter-wave frequencies. The devices investigated are…”
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5
A Broadband Quasi-Optical Terahertz Detector Utilizing a Zero Bias Schottky Diode
Published in IEEE microwave and wireless components letters (01-09-2010)“…A quasi-optical broadband terahertz detector using a zero bias Schottky diode mounted on a self-complimentary sinuous antenna has been developed. Design and…”
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6
Silicon-on-Insulator Substrates as a Micromachining Platform for Advanced Terahertz Circuits
Published in Proceedings of the IEEE (01-06-2017)“…This paper presents a comprehensive overview of the development and utilization of a micromachined silicon-on-insulator (SOI) fabrication process that has…”
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NbTiN/AlN/NbTiN SIS Junctions Realized by Reactive Bias Target Ion Beam Deposition
Published in IEEE transactions on applied superconductivity (01-09-2019)“…The current state-of-the-art approach for superconductor-insulator-superconductor (SIS) junction fabrication is based on magnetron sputtering and the Gurvitch…”
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8
160 GHz Balanced Frequency Quadruplers Based on Quasi-Vertical Schottky Varactors Integrated on Micromachined Silicon
Published in IEEE transactions on terahertz science and technology (01-11-2014)“…This work reports on an integrated frequency quadrupler operating at 160 GHz with maximum efficiency of 30% and corresponding output power of 70 mW. The…”
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A 15.3-dBm, 18.3% PAE F-Band Power Amplifier in 130-nm InP HBT With Modulation Measurements
Published in IEEE microwave and wireless technology letters (Print) (01-05-2023)“…A scalable platform for modulation measurements at millimeter-and submillimeter-wave frequencies is presented and demonstrated at 121 GHz. The system is used…”
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10
A W-Band Micromachined On-Wafer Probe With Integrated Balun for Characterization of Differential Circuits
Published in IEEE transactions on microwave theory and techniques (01-05-2016)“…Differential circuits are commonly used for millimeter-wave monolithic integrated circuits such as amplifiers and voltage-controlled oscillators. The…”
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11
A Phase Conjugator Based on Fourth-Order Subharmonically Pumped Mixers
Published in IEEE microwave and wireless technology letters (Print) (01-06-2024)“…A new phase conjugator circuit architecture suitable for retrodirective array applications is described and demonstrated. The architecture is based on…”
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12
Thermal Characterization of Quasi-Vertical GaAs Schottky Diodes Integrated on Silicon
Published in IEEE transactions on electron devices (01-01-2019)“…This paper presents the first thermal characterization of terahertz quasi-vertical GaAs Schottky diodes integrated on silicon. The devices are characterized…”
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13
A Tunable 240-290 GHz Waveguide Enclosed 2-D Grid HBV Frequency Tripler
Published in IEEE transactions on terahertz science and technology (01-05-2016)“…This paper presents a high-power 240-290 GHz waveguide enclosed two-dimensional (2-D) grid heterostructure barrier varactor (HBV) frequency multiplier. A 35 mW…”
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14
Detachable Terahertz Chip-to-Chip Interconnectors
Published in 2022 IEEE/MTT-S International Microwave Symposium - IMS 2022 (19-06-2022)“…This paper presents the design, simulation, and measurement of a detachable chip-to-chip interconnect operating from 140 to 220 GHz (the WR5.1 band). The…”
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Conference Proceeding -
15
Optical Spectroscopic Study of AlN-Based SIS Devices Grown by Inductively Coupled Plasma
Published in IEEE transactions on applied superconductivity (01-08-2019)“…High-quality Nb-based superconductor-insulator-superconductor (SIS) junctions with aluminum oxide tunnel barriers grown from Al overlayers are broadly reported…”
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16
Opening the terahertz window with integrated diode circuits
Published in IEEE journal of solid-state circuits (01-10-2005)“…The terahertz region of the electromagnetic spectrum, spanning from 100 GHz through 10 THz, is of increasing importance for a wide range of scientific,…”
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Journal Article Conference Proceeding -
17
Growth and Characterization of NbTiN Films Synthesized by Reactive Bias Target Ion Beam Deposition (RBTIBD)
Published in IEEE transactions on applied superconductivity (01-08-2019)“…High energy gap Nb-based superconducting alloys with low normal state resistivity are fundamentally important for realization of low-loss high frequency…”
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18
Electronic Calibration for Submillimeter-Wave On-Wafer Scattering Parameter Measurements Using Schottky Diodes
Published in IEEE transactions on terahertz science and technology (01-11-2020)“…A proof-of-concept demonstration of on-wafer electronic calibration in the submillimeter-wave band (325-500 GHz) is presented. A GaAs Schottky diode shunting a…”
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A Dual-Band Micromachined On-Wafer Probe with Integrated Diplexer for Ultra-Broadband Measurements to 220 GHz
Published in 2023 IEEE/MTT-S International Microwave Symposium - IMS 2023 (11-06-2023)“…This work presents a micromachined dual-band probe for ultra-broadband single-sweep measurements to 220 GHz. The probe features both WR-5.1 waveguide and 1.0…”
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Conference Proceeding -
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Improved Micromachined Terahertz On-Wafer Probe Using Integrated Strain Sensor
Published in IEEE transactions on microwave theory and techniques (01-12-2013)“…This paper introduces an improved method for monitoring and controlling the contact condition of terahertz on-wafer probes to enhance the measurement…”
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