Search Results - "Wei-Chao Chiu"
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1
Normally-off p-GaN Gated AlGaN/GaN HEMTs Using Plasma Oxidation Technique in Access Region
Published in IEEE journal of the Electron Devices Society (2020)“…Normally-off p-GaN gated AlGaN/GaN high electron mobility transistors (HEMTs) were developed. Oxygen plasma treatment converted a low-resistive p-GaN layer in…”
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Journal Article -
2
Wide-angle polarization independent infrared broadband absorbers based on metallic multi-sized disk arrays
Published in Optics express (23-04-2012)“…Two-dimensional metallic broadband absorbers on a SiO(2)/Ag/Si substrate were experimentally studied. The absorptivity of such structure can be increased by…”
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3
Monolithic Integration of 2-D Multimode Interference Couplers and Silicon Photonic Wires
Published in IEEE journal of selected topics in quantum electronics (01-05-2011)“…A new technology using hydrogen annealing and thermal oxidation is proposed to fabricate a very compact 2-D multimode interference coupler monolithically…”
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Monolithically integrated low-loss silicon photonic wires and three-dimensional tapered couplers fabricated by self-profile transformation
Published in Applied physics letters (05-11-2007)“…A subwavelength silicon photonic wire integrated with three-dimensional (3D) tapered couplers fabricated through self-profile transformation is presented…”
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5
Fabrication of Low-Loss Silicon Photonic Wires by Self-Profile Transformation and Applications in 3-D Photonic Integration and Nonlinear Optics
Published in IEEE journal of quantum electronics (01-05-2010)“…A new technology using self-profile transformation is introduced to make subwavelength silicon photonic wires with very smooth surface. Due to the smooth…”
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6
Low-Mg out-diffusion of a normally off p-GaN gate high-electron-mobility transistor by using the laser activation technique
Published in Materials science in semiconductor processing (01-10-2020)“…A low- Magnesium (Mg) out-diffusion normally off p-GaN gated AlGaN/GaN high-electron-mobility transistor (HEMT) was developed using a low-temperature laser…”
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Aging and Cu concentration effects on Sn–9Zn–xCu/Au couples
Published in Journal of alloys and compounds (15-10-2013)“…•Sn–9wt%Zn-xCu alloys reacted with Au substrate was first systematically investigated.•IMC formation in the SZ–xCu/Au systems is very sensitive to the Cu…”
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Interfacial Reactions of Sn, Sn-3.0Ag-0.5Cu, and Sn-9Zn Lead-Free Solders with Fe-42Ni Substrates
Published in Journal of electronic materials (2014)“…Interfacial reactions between Sn, Sn-3.0 wt.%Ag-0.5 wt.%Cu (SAC), and Sn-9 wt.%Zn (SZ) lead-free solders and Fe-42 wt.%Ni (alloy 42) substrates at 240°C,…”
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9
Interfacial Reactions in Sn/Ni-xW Couples
Published in Journal of electronic materials (01-03-2015)“…Solid/solid and liquid/solid reaction couple techniques were applied to investigate the interfacial reactions in the Sn/Ni- x W systems ( x = 0 wt.%,…”
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10
GaN on Si RF Devices and MMICs-Pivotal Driving Force of 5G Communication Micro/Macro Cells
Published in 2019 IEEE MTT-S International Wireless Symposium (IWS) (01-05-2019)“…5G communication and its related wireless technology will bring tremendous challenges for various base station and mobile handset manufacturers due to lower…”
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Conference Proceeding -
11
Micro-particle transport manipulation by guided-wave optical interference
Published in 2012 IEEE 25th International Conference on Micro Electro Mechanical Systems (MEMS) (01-01-2012)“…In this paper, we demonstrate that micro-particle is able to be transported by two types of integrated photonic devices; one is directional couplers and the…”
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Conference Proceeding -
12
GaN lattice matched ZnO/Pr2O3 film as gate dielectric oxide layer for AlGaN/GaN HEMT
Published in 2009 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC) (01-12-2009)“…In this work, we perform AlGaN/GaN MOS-HEMT by using ZnO/Pr 2 O 3 as gate dielectric. After 600°C annealing, the XRD analysis shows ZnO thin films with highly…”
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Conference Proceeding -
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Phase equilibria of the Sn-Ni-W ternary system at 750 °C
Published in 2016 11th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT) (01-10-2016)“…Ni is commonly used as a barrier layer due to its lower reactivity with solders which combine with Sn. W can be used as a minor to reduce the intermetallic…”
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Conference Proceeding -
14
Low-Loss Silicon Wire Waveguides with 3-D Tapered Couplers Fabricated by Self Profile Transformation
Published in 2007 Conference on Lasers and Electro-Optics (CLEO) (01-05-2007)“…A novel low-loss silicon wire waveguide as well as 3-D tapered couplers is demonstrated by self profile transformation for the first time. The preliminary…”
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Conference Proceeding -
15
MEMS-actuated waveguide phase modulators
Published in 2010 International Conference on Optical MEMS and Nanophotonics (01-08-2010)“…An optical phase modulator for integrated optics was proposed by monolithic integration of deformable silicon photonic wires and MEMS actuators. Via applying…”
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Conference Proceeding -
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Monolithic integration of three-dimensional multimode interference couplers with silicon photonic wires via self-profile transformation
Published in 2008 5th IEEE International Conference on Group IV Photonics (01-09-2008)“…A novel 3-D MMI coupler with silicon photonic wires is demonstrated using self-profile transformation for the first time. The preliminary simulation results…”
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Conference Proceeding -
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