Search Results - "Webster, Eric A G"
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A High-Performance Single-Photon Avalanche Diode in 130-nm CMOS Imaging Technology
Published in IEEE electron device letters (01-11-2012)“…A single-photon avalanche diode (SPAD) is reported in a 130-nm CMOS imaging process which achieves a peak photon detection efficiency (PDE) of ≈72% at 560 nm…”
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Journal Article -
2
Scaleable Single-Photon Avalanche Diode Structures in Nanometer CMOS Technology
Published in IEEE transactions on electron devices (01-07-2011)“…Single-photon avalanche photodiodes (SPADs) operating in Geiger mode offer exceptional time resolution and optical sensitivity. Implementation in modern…”
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Journal Article -
3
Per-Pixel Dark Current Spectroscopy Measurement and Analysis in CMOS Image Sensors
Published in IEEE transactions on electron devices (01-09-2010)“…A per-pixel dark current spectroscopy measurement and analysis technique for identifying deep-level traps in CMOS imagers is presented. The short integration…”
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4
A single electron bipolar avalanche transistor implemented in 90 nm CMOS
Published in Solid-state electronics (01-10-2012)“…► 90nm CMOS implementation with high voltage compatibility. ► 120dB (10Hz–10MHz) dynamic range. ► Attoampere sensitivity. ► Demonstration of single transistor…”
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Journal Article -
5
A Single-Photon Avalanche Diode in 90-nm CMOS Imaging Technology With 44% Photon Detection Efficiency at 690 nm
Published in IEEE electron device letters (01-05-2012)“…A CMOS and back-side illumination-compatible single-photon avalanche diode (SPAD) is reported in 90-nm imaging technology with a peak photon detection…”
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Journal Article -
6
A TCAD and Spectroscopy Study of Dark Count Mechanisms in Single-Photon Avalanche Diodes
Published in IEEE transactions on electron devices (01-12-2013)“…It is shown through dark count rate spectroscopy (DCRS) and TCAD-simulations that in single-photon avalanche diodes (SPADs), the majority of low dark count…”
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7
Transient Single-Photon Avalanche Diode Operation, Minority Carrier Effects, and Bipolar Latch Up
Published in IEEE transactions on electron devices (01-03-2013)“…The operation of planar CMOS single-photon avalanche diodes (SPADs) is studied with the use of transient technology-computer-aided-design simulations…”
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8
A Dual-Junction Single-Photon Avalanche Diode in 130-nm CMOS Technology
Published in IEEE electron device letters (01-03-2013)“…A dual-junction single-photon avalanche diode structure is reported in a 130-nm low-voltage CMOS technology. The device comprises two stacked avalanche…”
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9
High fill factor digital Silicon Photomultiplier structures in 130nm CMOS imaging technology
Published in 2012 IEEE Nuclear Science Symposium and Medical Imaging Conference Record (NSS/MIC) (01-10-2012)“…This paper discusses recent progress in the realization of fully digital Silicon Photomultipliers (SiPMs) in an advanced 130nm CMOS imaging process. A…”
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Conference Proceeding -
10
Real-time dynamic single-molecule protein sequencing on an integrated semiconductor device
Published in Science (American Association for the Advancement of Science) (14-10-2022)“…Studies of the proteome would benefit greatly from methods to directly sequence and digitally quantify proteins and detect posttranslational modifications with…”
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Journal Article -
11
Analysis of Very High Energy Implantation Profiles at Channeling and Non-Channeling Conditions
Published in 2018 22nd International Conference on Ion Implantation Technology (IIT) (01-09-2018)“…This paper presents SIMS data for very high energy ion implantations of arsenic (1.9-8.0 MeV), boron (2.0-5.0 MeV), and phosphorus (4.0-8.0 MeV) from Axcelis'…”
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Conference Proceeding -
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1.5\mu \mathrm Dual Conversion Gain, Backside Illuminated Image Sensor Using Stacked Pixel Level Connections with 13ke-Full-Well Capacitance and 0.8e-Noise
Published in 2018 IEEE International Electron Devices Meeting (IEDM) (01-12-2018)“…A 1.5\mu \mathrm{m} pixel size, 8 mega pixel density, dual conversion gain (DCG), back side illuminated CMOS image sensor (CIS) is described having a linear…”
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Conference Proceeding