Search Results - "Webster, Eric A G"

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  1. 1

    A High-Performance Single-Photon Avalanche Diode in 130-nm CMOS Imaging Technology by Webster, E. A. G., Grant, L. A., Henderson, R. K.

    Published in IEEE electron device letters (01-11-2012)
    “…A single-photon avalanche diode (SPAD) is reported in a 130-nm CMOS imaging process which achieves a peak photon detection efficiency (PDE) of ≈72% at 560 nm…”
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    Journal Article
  2. 2

    Scaleable Single-Photon Avalanche Diode Structures in Nanometer CMOS Technology by Richardson, J A, Webster, E A G, Grant, L A, Henderson, R K

    Published in IEEE transactions on electron devices (01-07-2011)
    “…Single-photon avalanche photodiodes (SPADs) operating in Geiger mode offer exceptional time resolution and optical sensitivity. Implementation in modern…”
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    Journal Article
  3. 3

    Per-Pixel Dark Current Spectroscopy Measurement and Analysis in CMOS Image Sensors by Webster, E A G, Nicol, R L, Grant, L, Renshaw, D

    Published in IEEE transactions on electron devices (01-09-2010)
    “…A per-pixel dark current spectroscopy measurement and analysis technique for identifying deep-level traps in CMOS imagers is presented. The short integration…”
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    Journal Article
  4. 4

    A single electron bipolar avalanche transistor implemented in 90 nm CMOS by Webster, Eric A.G., Richardson, Justin A., Grant, Lindsay A., Henderson, Robert K.

    Published in Solid-state electronics (01-10-2012)
    “…► 90nm CMOS implementation with high voltage compatibility. ► 120dB (10Hz–10MHz) dynamic range. ► Attoampere sensitivity. ► Demonstration of single transistor…”
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    Journal Article
  5. 5

    A Single-Photon Avalanche Diode in 90-nm CMOS Imaging Technology With 44% Photon Detection Efficiency at 690 nm by Webster, E. A. G., Richardson, J. A., Grant, L. A., Renshaw, D., Henderson, R. K.

    Published in IEEE electron device letters (01-05-2012)
    “…A CMOS and back-side illumination-compatible single-photon avalanche diode (SPAD) is reported in 90-nm imaging technology with a peak photon detection…”
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    Journal Article
  6. 6

    A TCAD and Spectroscopy Study of Dark Count Mechanisms in Single-Photon Avalanche Diodes by Webster, Eric A. G., Henderson, Robert K.

    Published in IEEE transactions on electron devices (01-12-2013)
    “…It is shown through dark count rate spectroscopy (DCRS) and TCAD-simulations that in single-photon avalanche diodes (SPADs), the majority of low dark count…”
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    Journal Article
  7. 7

    Transient Single-Photon Avalanche Diode Operation, Minority Carrier Effects, and Bipolar Latch Up by Webster, E. A. G., Grant, L. A., Henderson, R. K.

    Published in IEEE transactions on electron devices (01-03-2013)
    “…The operation of planar CMOS single-photon avalanche diodes (SPADs) is studied with the use of transient technology-computer-aided-design simulations…”
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    Journal Article
  8. 8

    A Dual-Junction Single-Photon Avalanche Diode in 130-nm CMOS Technology by Henderson, R. K., Webster, E. A. G., Grant, L. A.

    Published in IEEE electron device letters (01-03-2013)
    “…A dual-junction single-photon avalanche diode structure is reported in a 130-nm low-voltage CMOS technology. The device comprises two stacked avalanche…”
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    Journal Article
  9. 9

    High fill factor digital Silicon Photomultiplier structures in 130nm CMOS imaging technology by Walker, Richard J., Webster, Eric A. G., Jiahao Li, Massari, Nicola, Henderson, Robert K.

    “…This paper discusses recent progress in the realization of fully digital Silicon Photomultipliers (SiPMs) in an advanced 130nm CMOS imaging process. A…”
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    Conference Proceeding
  10. 10

    Real-time dynamic single-molecule protein sequencing on an integrated semiconductor device by Reed, Brian D, Meyer, Michael J, Abramzon, Valentin, Ad, Omer, Adcock, Pat, Ahmad, Faisal R, Alppay, Gün, Ball, James A, Beach, James, Belhachemi, Dominique, Bellofiore, Anthony, Bellos, Michael, Beltrán, Juan Felipe, Betts, Andrew, Bhuiya, Mohammad Wadud, Blacklock, Kristin, Boer, Robert, Boisvert, David, Brault, Norman D, Buxbaum, Aaron, Caprio, Steve, Choi, Changhoon, Christian, Thomas D, Clancy, Robert, Clark, Joseph, Connolly, Thomas, Croce, Kathren Fink, Cullen, Richard, Davey, Mel, Davidson, Jack, Elshenawy, Mohamed M, Ferrigno, Michael, Frier, Daniel, Gudipati, Saketh, Hamill, Stephanie, He, Zhaoyu, Hosali, Sharath, Huang, Haidong, Huang, Le, Kabiri, Ali, Kriger, Gennadiy, Lathrop, Brittany, Li, An, Lim, Peter, Liu, Stephen, Luo, Feixiang, Lv, Caixia, Ma, Xiaoxiao, McCormack, Evan, Millham, Michele, Nani, Roger, Pandey, Manjula, Parillo, John, Patel, Gayatri, Pike, Douglas H, Preston, Kyle, Pichard-Kostuch, Adeline, Rearick, Kyle, Rearick, Todd, Ribezzi-Crivellari, Marco, Schmid, Gerard, Schultz, Jonathan, Shi, Xinghua, Singh, Badri, Srivastava, Nikita, Stewman, Shannon F, Thurston, T R, Trioli, Philip, Tullman, Jennifer, Wang, Xin, Wang, Yen-Chih, Webster, Eric A G, Zhang, Zhizhuo, Zuniga, Jorge, Patel, Smita S, Griffiths, Andrew D, van Oijen, Antoine M, McKenna, Michael, Dyer, Matthew D, Rothberg, Jonathan M

    “…Studies of the proteome would benefit greatly from methods to directly sequence and digitally quantify proteins and detect posttranslational modifications with…”
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    Journal Article
  11. 11

    Analysis of Very High Energy Implantation Profiles at Channeling and Non-Channeling Conditions by Kondratenko, Serguei I., Rubin, Leonard M., Webster, Eric A. G.

    “…This paper presents SIMS data for very high energy ion implantations of arsenic (1.9-8.0 MeV), boron (2.0-5.0 MeV), and phosphorus (4.0-8.0 MeV) from Axcelis'…”
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    Conference Proceeding
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