Search Results - "Webb, J.B"

An accuracy assessment of forest disturbance mapping in the western Great Lakes by Zimmerman, P.L., Housman, I.W., Perry, C.H., Chastain, R.A., Webb, J.B., Finco, M.V.

“…The increasing availability of satellite imagery has spurred the production of thematic land cover maps based on satellite data. These maps are more valuable…”
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AlGaN/GaN Metal-Oxide-Semiconductor High-Electron Mobility Transistors Using Oxide Insulator Grown by Photoelectrochemical Oxidation Method by Li-Hsien Huang, Shu-Hao Yeh, Ching-Ting Lee, Haipeng Tang, Bardwell, J., Webb, J.B.

“…A photoelectrochemical oxidation method was used to directly grow oxide layer on AlGaN surface. The annealed oxide layer exhibited beta-Ga 2 O 3 and alpha-Al 2…”
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Optical investigation of GaSb thin films grown on GaAs by metalorganic magnetron sputtering by Feng, Z.C., Hou, F.C., Webb, J.B., Shen, Z.X., Rusli, E., Ferguson, I.T., Lu, W.

“…Metalorganic magnetron sputtering (MOMS) technology has been applied to the growth of epitaxial GaSb layers on GaAs (001). Optical studies are performed on a…”
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Structure characterization of AlN buffer layers grown on (0 0 0 1) sapphire by magnetron sputter epitaxy by Tang, H, Webb, J.B, Moisa, S, Bardwell, J.A, Rolfe, S

“…AlN layers grown by magnetron sputter epitaxy (MSE) are effective buffer layers for the growth of high quality GaN materials and devices. The structural and…”
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Determination of elastic strains in epitaxial layers by HREM by Robertson, M.D., Currie, J.E., Corbett, J.M., Webb, J.B.

“…A new technique is presented to directly measure strains in epitaxial systems from high-resolution electron microscope (HREM) images. This method involves the…”
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AlGaN/GaN field effect transistors with C-doped GaN buffer layer as an electrical isolation template grown by molecular beam epitaxy by Haffouz, S., Tang, H., Bardwell, J.A., Hsu, E.M., Webb, J.B., Rolfe, S.

“…The effectiveness of Ammonia Molecular Beam Epitaxy (MBE) grown carbon-doped GaN buffer layer as an electrical isolation template was investigated. AlGaN/GaN…”
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The effect of local anaesthetic cream (EMLA ®) applied with an occlusive dressing on skin thickness. Does it matter? by Tahir, A., Webb, J.B., Allen, G., Nancarrow, J.D.

“…EMLA ® cream is used in plastic surgery as a topical anaesthetic to harvest split skin grafts. It has been observed that the skin appears pale and oedematous…”
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Computing bases of modular forms using the graded algebra structure by Lam, Michael O., McClelland, Noah S., Petty, Matthew R., Webb, John J. B.

“…We develop a new algorithm to compute a basis for M k ( Γ 0 ( N ) ) , the space of weight k holomorphic modular forms on Γ 0 ( N ) , in the case when the…”
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Nitride-based 2DEG photodetectors with a large AC responsivity by Chang, S.J., Kuan, T.M., Ko, C.H., Su, Y.K., Webb, J.B., Bardwell, J.A., Liu, Y., Tang, H., Lin, W.J., Cherng, Y.T., Lan, W.H.

“…Nitride-based AlGaN/GaN heterostructure two-dimensional electron gas photodetectors have been successfully fabricated by low-pressure metalorganic vapor phase…”
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Nitride-based HFETs with carrier confinement layers by Su, Y.K, Chang, S.J, Kuan, T.M, Ko, C.H, Webb, J.B, Lan, W.H, Cherng, Y.T, Chen, S.C

“…Nitride-based Al 0.24Ga 0.76N/GaN heterostructure field effect transistors (HFETs) with carrier confinement layers were successfully fabricated. It was found…”
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Flame burns: a forgotten danger of diathermy? by Webb, J.B., Balaratnam, S., Park, A.J.

“…Diathermy and spirit-based skin preparations are both used on a daily basis in most hospital theatres. We report a case illustrating the potential hazards of…”
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Nitride-based Schottky diodes and HFETs fabricated by photo-enhanced chemical wet etching by Su, Y.K, Chang, S.J, Kuan, T.M, Ko, C.H, Webb, J.B, Lan, W.H, Cherng, Y.T, Chen, S.C

“…Photo-enhanced chemical (PEC) wet etching technology was used to etch GaN and AlGaN epitaxial layers. It was found that the maximum etch rates were 510, 1960,…”
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Reproducibility of growing AlGaN/GaN high-electron-mobility-transistor heterostructures by molecular-beam epitaxy by Tang, H., Webb, J.B., Bardwell, J.A., Rolfe, S., MacElwee, T.

“…High-quality GaN/AlGaN high-electron-mobility transistors (HEMT) characterized by room temperature mobilities of ∼1000 cm 2 V −1 s −1 and sheet electron…”
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GaN/AlGaN Two-Dimensional Electron Gas Grown by Ammonia-MBE on MOCVD GaN Template by Tang, H., Webb, J.B., Rolfe, S., Bardwell, J.A., Tomka, D., Coleridge, P., Ko, C.H., Su, Y.K., Chang, S.J.

“…The growth of high quality GaN/AlGaN two‐dimensional electron gas on MOCVD GaN template substrates by ammonia‐MBE is reported. The homoepitaxial growth…”
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Surface and interface analysis of [formula omitted] semiconductor materials by Li, K., Lin, J., Wee, A.T.S., Tan, K.L., Feng, Z.C., Webb, J.B.

“…This paper presents a detailed study on the surface and interface of MOMS-grown GaSb on GaAs using XPS, AES and SIMS techniques. It is found by XPS that at the…”
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Behavior of partition values modulo powers of primes by Webb, John J.B

“…Let n be a positive integer. A partition of n is a sequence of non-increasing positive integers whose sum is n. The partition function, p(n), counts the number…”
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Bias Stress Measurements on High Performance AlGaN/GaN HFET Devices by Liu, Y., Bardwell, J.A., McAlister, S.P., Tang, H., Webb, J.B., MacElwee, T.W.

“…High performance AlGaN/GaN heterojunction field effect transistor (HFET) devices have been fabricated, using material grown by MBE on sapphire substrates. The…”
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Growth of GaN/AlGaN HFETs on SiC Substrates with Optimized Electrical Characteristics Using the Ammonia-MBE Technique by Webb, J.B., Tang, H., Bardwell, J.A., Liu, Y., Lapointe, J., MacElwee, T.

“…Optimization of the electrical characteristics of GaN/AlGaN HFETs grown on SiC substrates by ammonia‐MBE is reported. By optimizing the growth conditions,…”
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Transmission electron microscopy characterization of InAlSb/InSb bilayers and superlattices by Robertson, M.D., Corbett, J.M., Webb, J.B.

“…High quality InAlSb/InSb bilayers and superlattices have been grown by magnetron sputter epitaxy and the physical structure has been characterized by…”
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Selective Area Growth of GaN on SiC Substrate by Ammonia-Source MBE by Tang, H., Bardwell, J.A., Webb, J.B., Rolfe, S., Moisa, S., Fraser, J., Raymond, S., Sikora, P.

“…The feasibility of selective area growth of GaN by ammonia‐MBE has been demonstrated on SiC substrates. Under typical growth conditions for ammonia‐MBE, GaN…”
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