Search Results - "Wayne Lui"

A three-dimensional fourth-order finite-difference time-domain scheme using a symplectic integrator propagator by Hirono, T., Wayne Lui, Seki, S., Yoshikuni, Y.

“…A new explicit fourth-order finite-difference time-domain (FDTD) scheme for three-dimensional electromagnetic field simulation is proposed in this paper. A…”
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Full-vectorial mode analysis with considerations of field singularities at corners of optical waveguides by Lui, W.W., Xu, C.-L., Wei-Ping Huang, Yokoyama, K., Seki, S.

“…When electric field diverges at corners of optical waveguides, conventional numerical techniques such as the finite-difference method cannot be used for…”
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A critique on the use of window structure in travelling wave semiconductor optical amplifiers by LUI, W. W, MAGARI, K, HASUMI, Y, YOKOYAMA, K, NAGANUMA, M

“…The inclusion of window structure to the conventional design of travelling wave semiconductor optical amplifier was thought to help significantly reduce facet…”
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Polarization rotation in semiconductor bending waveguides: a coupled-mode theory formulation by Lui, W.W., Hirono, T., Yokoyama, K., Wei-Ping Huang

“…A theoretical model for the bending waveguide polarization rotator has been developed based on the full-vectorial wave equations and the coupled-mode theory…”
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Explanation for the temperature insensitivity of the Auger recombination rates in 1.55 μm InP-based strained-layer quantum-well lasers by Seki, Shunji, Lui, Wayne W., Yokoyama, Kiyoyuki

“…We study the temperature sensitivity of the Auger recombination rates in 1.55 μm InP-based strained-layer (SL) quantum-well (QW) lasers on the basis of the…”
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Theoretical analysis of pure effects of strain and quantum confinement on differential gain in InGaAsP/lnP strained-layer quantum-well lasers by Seki, S., Yamanaka, T., Lui, W., Yoshikuni, Y., Yokoyama, K.

“…The pure effects of both strain and quantum confinement on differential gain of InGaAsP/InP strained-layer quantum-well lasers (SL-QWL's) are studied on the…”
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Theoretical study on enhanced differential gain and extremely reduced linewidth enhancement factor in quantum-well lasers by Yamanaka, T., Yoshikuni, Y., Yokoyama, K., Lui, W., Seki, S.

“…Low-chirp lasing operation in semiconductor lasers is addressed in a theoretical investigation of the possibility of reducing the linewidth enhancement factor…”
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Asymmetric discretization of wave equation as boundary condition in modal analysis [integrated optics] by Lui, W.W., Yokoyama, K., Huang, W.-P.

“…A general method of deriving finite-difference schemes suitable for the discretization of the wave equation along the boundary of a simulation region has been…”
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Optimum strain for the suppression of Auger recombination effects in compressively strained InGaAs/InGaAsP quantum well lasers by Lui, Wayne W., Yamanaka, Takayuki, Yoshikuni, Yuzo, Seki, Shunji, Yokoyama, Kiyoyuki

“…The primary mechanism that leads to the suppression of Auger recombination effects in compressively strained quantum wells is found due to the existence and…”
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Modeling and design of bending waveguide based semiconductor polarization rotators by Lui, W.W., Magari, K., Yoshimoto, N., Oku, S., Hirono, T., Yokoyama, K., Huang, W.-P.

“…A theoretical model for bending waveguide based semiconductor polarization rotators has been established, which is based on the full-vectorial wave equations…”
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Theoretical analysis of extremely small linewidth enhancement factor and enhanced differential gain in modulation-doped strained quantum-well lasers by YAMANAKA, T, YOSHIKUNI, Y, LUI, W, YOKOYAMA, K, SEKI, S

“…The possibilities of extreme reduction in the linewidth enhancement factor α and of chirpless operation are theoretically investigated in InGaAs/InGaAsP…”
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Unifying explanation for recent temperature sensitivity measurements of Auger recombination effects in strained InGaAs/InGaAsP quantum-well lasers by LUI, W. W, YAMANAKA, T, YOSHIKUNI, Y, SEKI, S, YOKOYAMA, K

“…Recent temperature sensitivity measurements of Auger recombination effects in compressively strained quantum-well structures, which are seemingly inconsistent,…”
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LD optical switch with polarization insensitivity over a wide wavelength range by Takeshita, T., Yoshino, K., Ito, T., Lui, W.W., Okamoto, M., Kondo, Y., Kishi, K., Tamamura, T., Suzuki, Y., Magari, K., Yamamoto, M., Naganuma, M.

“…A double-heterostructure (DH) laser with TM mode lasing has been achieved with a narrow active-layer width, and a laser-diode optical switch (LDSW) module with…”
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Potential chirpless DFB lasers for InGaAs/InGaAsP compressive-strained quantum wells using modulation doping by YAMANAKA, T, YOSHIKUNI, Y, LUI, W, YOKOYAMA, K, SEKI, S

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Semiconductor device simulation using quantum transport theory by Lui, Wayne Wai-Wing

“…The traditional semiconductor device simulation techniques are often derived from the semi-classical Boltzmann Transport Equation (BTE). In this work, the…”
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Modeling vector properties of electromagnetic fields in semiconductor optical waveguides by Lui, W.W.

“…Due to scattering in fibers, the polarization of an optical signal after propagating through a fiber network is randomized. To ensure that the signal is…”
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Suppression of Auger recombination effects in compressively strained quantum-well lasers by Lui, W.W., Yamanaka, T., Yoshikuni, Y., Yokoyama, K., Seki, S.

“…Based on detailed valence band structure, a Monte Carlo analysis of the Auger recombination effects in compressively strained quantum-well diode lasers has…”
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A suppression mechanism of Auger recombination effects in strained quantum wells induced by local negative curvature of the energy band structure by Lui, W.W., Yamanaka, T., Yoshikuni, U., Seki, S., Yokoyama, K.

“…An analytical method has been developed to calculate distribution of carriers that undergo CHHS Auger recombinations in semiconductors. From this approach, it…”
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Static wavelength shift for multielectrode DFB lasers with longitudinal mode spatial hole burning using a two-dimensional numerical simulator by Yokoyama, K., Yamanaka, T., Seki, S., Lui, W.

“…The static wavelength shift for multielectrode distributed-feedback laser diodes (DFB LDs) with a lambda /4-phase-shift is studied using a two-dimensional…”
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MOSFET substrate current model including energy transport by Fukuma, M., Lui, W.W.

“…A new MOSFET substrate current model, incorporating energy transport, is proposed. It was found that a non-steady-state electron transport effect and two…”
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