The CDF Run IIb silicon detector

Fermilab plans to deliver 5–15 fb −1 of integrated luminosity to the CDF and D0 experiments. The current inner silicon detectors at CDF (SVXIIa and L00) will not tolerate the radiation dose associated with high-luminosity running and will need to be replaced. A new readout chip (SVX4) has been desig...

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Published in:	Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Vol. 518; no. 1; pp. 270 - 276
Main Authors:	Aoki, M., Bacchetta, N., Behari, S., Benjamin, D., Bisello, D., Bolla, G., Bortoletto, D., Burghard, A., Busetto, G., Cabrera, S., Canepa, A., Castro, A., Cardoso, G., Chertok, M., Ciobanu, C., Derylo, G., Fang, I., Flaugher, B., Freeman, J., Galtieri, L., Galyardt, J., Garcia-Sciveres, M., Giurgiu, G., Gorelov, I., Haber, C., Hara, K., Hoeferkamp, M., Holbrook, B., Hrycyk, M., Junk, T., Kim, S., Kobayashi, K., Krieger, B., Kruse, M., Lander, R., Lu, R.-S., Lukens, P., Malferrari, L., Manea, C., Margotti, A., Maksimovic, P., Merkel, P., Moccia, S., Nakano, I., Naoumov, D., Novak, J., Okusawa, T., Orlov, Y., Pancaldi, G., Pantano, D., Pavlicek, V., Pellett, D., Seidel, S., Semeria, F., Takei, Y., Tanaka, R., Wang, Z., Watje, P., Weber, M., Wester, W., Wilkes, T., Yamamoto, K., Yao, W., Zimmermann, S., Zucchelli, S., Zucchini, A.
Format:	Journal Article
Language:	English
Published:	Elsevier B.V 01-02-2004
Subjects:	CDF Fermilab Run IIb Silicon sensors Silicon vertex detector SVX4 Tevatron 29.90.+r Silicon vertex detector CDF Silicon sensors SVX4 Tevatron 29.40.Gx Run IIb 29.40.Wk Fermilab
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Summary:	Fermilab plans to deliver 5–15 fb −1 of integrated luminosity to the CDF and D0 experiments. The current inner silicon detectors at CDF (SVXIIa and L00) will not tolerate the radiation dose associated with high-luminosity running and will need to be replaced. A new readout chip (SVX4) has been designed in radiation-hard 0.25 μm, CMOS technology. Single-sided sensors are arranged in a compact structure, called a stave, with integrated readout and cooling systems. This paper describes the general design of the Run IIb system, testing results of prototype electrical components (staves), and prototype silicon sensor performance before and after irradiation.
ISSN:	0168-9002 1872-9576
DOI:	10.1016/j.nima.2003.10.080