Search Results - "Wann, H.C."

High-endurance ultra-thin tunnel oxide in MONOS device structure for dynamic memory application by Wann, H.C., Chenming Hu

“…Ultra-thin tunnel oxide can conduct very high current through oxide via direct tunneling, and charge-to-breakdown increases dramatically due to less oxide…”
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The impact of device scaling and power supply change on CMOS gate performance by Kai Chen, Wann, H.C., Ko, P.K., Chenming Hu

“…Based a new empirical mobility model that is solely dependent on V/sub gs/, V/sub t/, and T/sub ox/ and a corresponding saturation drain current (I/sub dsat/)…”
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Design for suppression of gate-induced drain leakage in LDD MOSFETs using a quasi-two-dimensional analytical model by Parke, S.A., Moon, J.E., Wann, H.C., Ko, P.K., Hu, C.

“…A systematic study of gate-induced drain leakage (GIDL) in single-diffusion drain (SD), lightly doped drain (LDD), and fully gate-overlapped LDD (GOLD)…”
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An accurate semi-empirical saturation drain current model for LDD n-MOSFET by Kai Chen, Wann, H.C., Duster, J., Pramanik, D., Nariani, S., Ko, P.K., Hu, C.

“…Based on a new empirical mobility model which is solely dependent on V/sub gs/, V/sub t/ and T/sub ox/, a corresponding semiempirical I/sub dsat/ model for…”
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Channel doping engineering of MOSFET with adaptable threshold voltage using body effect for low voltage and low power applications by Wann, H.C., Chenming Hu, Noda, K., Sinitsky, D., Assaderaghi, F., Bokor, J.

“…With the scaling of the power supply voltage V/sub DD/ in low voltage and low power VLSI, the threshold voltage of the MOSFET device needs to be reduced to…”
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