Search Results - "Wanlass, M."

An extended defect as a sensor for free carrier diffusion in a semiconductor by Gfroerer, T. H., Zhang, Yong, Wanlass, M. W.

“…We use confocal photoluminescence microscopy to study carrier diffusion near an isolated extended defect (ED) in GaAs. We observe that the carrier diffusion…”
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Overcoming diffusion-related limitations in semiconductor defect imaging with phonon-plasmon-coupled mode Raman scattering by Hu, Changkui, Chen, Qiong, Chen, Fengxiang, Gfroerer, T. H., Wanlass, M. W., Zhang, Yong

“…Carrier diffusion is of paramount importance in many semiconductor devices, such as solar cells, photodetectors, and power electronics. Structural defects…”
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Spatial resolution versus data acquisition efficiency in mapping an inhomogeneous system with species diffusion by Chen, Fengxiang, Zhang, Yong, Gfroerer, T. H., Finger, A. N., Wanlass, M. W.

“…Traditionally, spatially-resolved photoluminescence (PL) has been performed using a point-by-point scan mode with both excitation and detection occurring at…”
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Charge Carrier Diffusion and Recombination Near Misfit Dislocations in GaAsP/GaInP Heterostructures by Gfroerer, T.H., Edmondson, A., Korir, Lilian, Zhang, Fan, Zhang, Yong, Wanlass, M.W.

“…GaAsP alloys are good candidates for the upper junction in Si-based dual-junction tandem solar cells. However, monolithic growth of GaAsP on Si is limited by…”
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A monolithic three-terminal GaInAsP/GaInAs tandem solar cell by Steiner, M. A., Wanlass, M. W., Carapella, J. J., Duda, A., Ward, J. S., Moriarty, T. E., Emery, K. A.

“…We describe the design and performance of a three‐terminal tandem solar cell for low‐concentration terrestrial applications. Designed for operation under a…”
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Recombination lifetime of In0.53Ga0.47As as a function of doping density by Ahrenkiel, R. K., Ellingson, R., Johnston, S., Wanlass, M.

“…We have fabricated devices with the structure InP/In0.53Ga0.47As/InP, with a InGaAs doping range varying from 2×1014 to 2×1019 cm−3. These isotype double…”
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InGaAs/InP double heterostructures on InP/Si templates fabricated by wafer bonding and hydrogen-induced exfoliation by Fontcuberta i Morral, A., Zahler, J. M., Atwater, Harry A., Ahrenkiel, S. P., Wanlass, M. W.

“…Hydrogen-induced exfoliation combined with wafer bonding has been used to transfer ∼600-nm-thick films of (100) InP to Si substrates. Cross-section…”
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Optimization of buffer layers for lattice-mismatched epitaxy of GaxIn1-xAs/InAsyP1-y double-heterostructures on InP by AHRENKIEL, S. P, WANLASS, M. W, CARAPELLA, J. J, AHRENKIEL, R. K, JOHNSTON, S. W, GEDVILAS, L. M

“…We optimize InAsyP1-y buffer layers and compositional grades for lattice-mismatched heteroepitaxy of GaxIn1-xAs/InAsyP1-y double-heterostructures on InP. The…”
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Metal Pillar Interconnection Topology for Bonded Two-Terminal Multijunction III-V Solar Cells by McMahon, W. E., Lin, C.-T, Ward, J. S., Geisz, J. F., Wanlass, M. W., Carapella, J. J., Olavarría, W., Young, M., Steiner, M. A., France, R. M., Kibbler, A. E., Duda, A., Olson, J. M., Perl, E. E., Friedman, D. J., Bowers, J. E.

“…Metal-interconnected multijunction solar cells offer one pathway toward efficiencies in excess of 50%. However, if a three- or four-terminal configuration is…”
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InGaP/GaAs/InGaAs inverted metamorphic (IMM) solar cells on 4″ epitaxial lifted off (ELO) wafers by Tatavarti, R, Wibowo, A, Martin, G, Tuminello, F, Youtsey, C, Hillier, G, Pan, N, Wanlass, M W, Romero, M

“…InGaP/GaAs/InGaAs inverted metamorphic (IMM) triple junction (TJ) solar cells were fabricated on epitaxial liftoff (ELO) 100 mm diameter GaAs wafers. These ELO…”
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MOCVD growth and properties of Zn3P2 and Cd3P2 films for thermal photovoltaic applications by HERMANN, A. M, MADAN, Arun, WANLASS, M. W, BADRI, V, AHRENKIEL, R, MORRISON, Scott, GONZALEZ, Carlos

“…We report the growth and characterization (structural and electronic) of thin films of Zn3P2 and Cd3P2 grown by MOCVD. Heterojunctions of this pair of dopable…”
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Auger recombination in low-band-gap n -type InGaAs by Metzger, W. K., Wanlass, M. W., Ellingson, R. J., Ahrenkiel, R. K., Carapella, J. J.

“…We measured the recombination lifetime of degenerate n-InxGa1−xAs for three different compositions that correspond to x=0.53, 0.66, and 0.78 (band gaps of…”
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Modeling photoluminescence spatial mapping of an isolated defect under uniform and selective excitation by Fengxiang Chen, Yong Zhang, Gfroerer, T. H., Finger, A. N., Wanlass, M. W.

“…In this work, two different excitation/detection modes, U/L mode and L/L mode for probing an extended defect are compared and discussed. A contrast function is…”
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Low post‐transplant measles and varicella titers among pediatric liver transplant recipients: A 10‐year single‐center study by Liman, Andrew Y. J., Wozniak, Laura J., St Maurice, Annabelle, Dunkel, Gregory L., Wanlass, Emy M., Venick, Robert S., McDiarmid, Sue V.

“…Background Vaccine preventable illnesses are important sources of morbidity, mortality, and increased healthcare costs in pediatric LT recipients. Our aim was…”
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Characterization survey of GaxIn1-xAs/InAsyP1-y double heterostructures and InAsyP1-y multilayers grown on InP by AHRENKIEL, S. P, WANLASS, M. W, CARAPELLA, J. J, GEDVILAS, L. M, KEYES, B. M, AHRENKIEL, R. K, MOUTINHO, H. R

“…Low-bandgap, lattice-mismatched GaxIn1-xAs (GaInAs) grown using InAsyP1-y (InAsP) compositional-step grades on InP is a primary choice for light-absorbing,…”
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Liquid-phase electroepitaxial growth of low band-gap p-InAsPSb/n-InAs and p-InAsP/n-InAs diode heterostructures for thermo-photovoltaic application by Gevorkyan, V.A., Aroutiounian, V.M., Gambaryan, K.M., Kazaryan, M.S., Touryan, K.J., Wanlass, M.W.

“…This report describes our efforts to fabricate InAsP/InAs and InAsPSb/InAs epitaxial diode heterostructures for TPV converter applications. For the growth of…”
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Defect states with an occupation-dependent lattice configuration in zinc-doped Ga0.58In0.42P on GaAs by Gfroerer, T H, Hampton, D G, Wanlass, M W

“…While lattice-matched Ga 0.51 In 0.49 P on GaAs has the ideal bandgap for the top converter in triple-junction GaAs-based solar cells, more complex designs…”
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Temperature dependence of photovoltaic cells, modules and systems by Emery, K., Burdick, J., Caiyem, Y., Dunlavy, D., Field, H., Kroposki, B., Moriarty, T., Ottoson, L., Rummel, S., Strand, T., Wanlass, M.W.

“…Photovoltaic (PV) cells and modules are often rated in terms of a set of standard reporting conditions defined by a temperature, spectral irradiance and total…”
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Structure and composition of lattice-mismatched III-V epilayers for high-efficiency photovoltaics by Rathi, M, Ahrenkiel, S P, Carapella, J J, Wanlass, M W, Steiner, M

“…Lattice mis-matched (LMM) multilayered structures were grown using metalorganic chemical vapor deposition (MOCVD) at NREL. Energy dispersive x-ray (EDX)…”
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Back-contacted and small form factor GaAs solar cell by Cruz-Campa, J L, Nielson, G N, Okandan, M, Wanlass, M W, Sanchez, C A, Resnick, P J, Clews, P J, Pluym, T, Gupta, V P

“…We present a newly developed microsystem enabled, back-contacted, shade-free GaAs solar cell. Using microsystem tools, we created sturdy 3 μm thick devices…”
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