Search Results - "Wanki Kim"

Nonvolatile 3D-FPGA with monolithically stacked RRAM-based configuration memory by Young Yang Liauw, Zhiping Zhang, Wanki Kim, Gamal, A. E., Wong, S. S.

“…SRAM based configuration memory is the primary contributor to the large area, delay, and power consumption of FPGAs relative to ASICs. In [1] it is estimated…”
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Pattern Training, Inference, and Regeneration Demonstration Using On‐Chip Trainable Neuromorphic Chips for Spiking Restricted Boltzmann Machine by Shin, Uicheol, Ishii, Masatoshi, Okazaki, Atsuya, Ito, Megumi, Rasch, Malte J., Kim, Wanki, Nomura, Akiyo, Choi, Wonseok, Koh, Dooyong, Hosokawa, Kohji, BrightSky, Matthew, Munetoh, Seiji, Kim, SangBum

“…A fully silicon‐integrated restricted Boltzmann machine (RBM) with an event‐driven contrastive divergence (eCD) training algorithm is implemented using novel…”
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Current Conduction Mechanism of Nitrogen-Doped RRAM by Kim, Wanki, Park, Sung Il, Zhang, Zhiping, Wong, Simon

“…To eliminate the forming process in resistive random access memory (RRAM), we introduced nitrogen into AlO x layer to generate a moderate amount of traps…”
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Impact of Phase‐Change Memory Flicker Noise and Weight Drift on Analog Hardware Inference for Large‐Scale Deep Learning Networks by Han, Jin-Ping, Rasch, Malte J., Liu, Zuoguang, Solomon, Paul, Brew, Kevin, Cheng, Kangguo, Ok, Injo, Chan, Victor, Longstreet, Michael, Kim, Wanki, Bruce, Robert L., Cheng, Cheng-Wei, Saulnier, Nicole, Narayanan, Vijay

“…The analog AI core concept is appealing for deep‐learning (DL) because it combines computation and memory functions into a single device. Yet, significant…”
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Forming-free nitrogen-doped AlOX RRAM with sub-μA programming current by Wanki Kim, Sung Il Park, Zhiping Zhang, Young Yang-Liauw, Sekar, D., Wong, H. P., Wong, S. S.

“…Nitrogen-doped AlO X Resistive RAM has been integrated on CMOS. The memory cell requires no forming, and sub-μA programming currents. The cell is capable of…”
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A Study on the Factors that Affect the Negotiation of Technology Trading for Promotion of Technology Transfer Commercialization by Kim, Wanki

“…Purpose - This Study aims to promote technology transfer commercialization and ultimately make contribution towards enhancement of the success rate of…”
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Strained Si1−xGex-on-insulator PMOS FinFETs with excellent sub-threshold leakage, extremely-high short-channel performance and source injection velocity for 10nm node and beyond by Hashemi, Pouya, Balakrishnan, Karthik, Majumdar, Amlan, Khakifirooz, Ali, Wanki Kim, Baraskar, Ashish, Yang, Li A., Chan, Kevin, Engelmann, Sebastian U., Ott, John A., Antoniadis, Dimitri A., Leobandung, Effendi, Dae-Gyu Park

“…We demonstrate high performance (HP) s-SiGe pMOS finFETs with I on /I eff of ~1.05/0.52mA/μm and ~1.3/0.71mA/μm at I off =100nA/μm at V DD =0.8 and 1V,…”
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Evaluation of collagen-based membranes for guided bone regeneration, by three-dimensional computerized microtomography by Coelho, Paulo Guilherme, DDS, MS, BS, MsMtE, PhD, Giro, Gabriela, DDS, MS, PhD, Kim, Wanki, DDS, Granato, Rodrigo, DDS, MS, PhD, Marin, Charles, DDS, MS, PhD, Bonfante, Estevam Augusto, DDS, MS, PhD, Bonfante, Samara, DDS, MS, PhD, Lilin, Thomas, DMV, Suzuki, Marcelo, DDS

“…Objective The aim of this study was to evaluate the use of a collagen-based membrane compared with no treatment on guided bone regeneration by 3-dimensional…”
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Effects of emulsifiers on properties of poly(styrene–butyl acrylate) latex-modified mortars by Pei, Meishan, Kim, Wanki, Hyung, Wongil, Ango, Aaron Joseph, Soh, Yangseob

“…Two styrene–butyl acrylate copolymer latices having the same chemical components but different emulsifiers were synthesized under the same reaction conditions,…”
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A Comprehensive Study of Transient Characteristics in FeFET Using In-Situ Vt Measurement Method by Myeong, Ilho, Kim, Hyoseok, Kim, Wanki, Ha, Daewon, Ahn, Sujin, Song, Jaihyuk

“…In ferroelectric FETs (FeFETs), the transient characteristics is a key issue to be addressed. Therefore, it is important to have an understanding based on…”
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A Comprehensive Study of Transient Characteristics in FeFET Using In-Situ V t Measurement Method by Myeong, Ilho, Kim, Hyoseok, Kim, Wanki, Ha, Daewon, Ahn, Sujin, Song, Jaihyuk

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Self‐Healing of a Confined Phase Change Memory Device with a Metallic Surfactant Layer by Xie, Yujun, Kim, Wanki, Kim, Yerin, Kim, Sangbum, Gonsalves, Jemima, BrightSky, Matthew, Lam, Chung, Zhu, Yu, Cha, Judy J.

“…Understanding and possibly recovering from the failure mechanisms of phase change memories (PCMs) are critical to improving their cycle life. Extensive…”
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Understanding the Memory Window of Ferroelectric FET and Demonstration of 4.8-V Memory Window With 20-nm HfO 2 by Qin, Yixin, Zhao, Zijian, Lim, Suhwan, Kim, Kijoon, Kim, Kwangsoo, Kim, Wanki, Ha, Daewon, Narayanan, Vijaykrishnan, Ni, Kai

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Understanding the Memory Window of Ferroelectric FET and Demonstration of 4.8-V Memory Window With 20-nm HfO2 by Qin, Yixin, Zhao, Zijian, Lim, Suhwan, Kim, Kijoon, Kim, Kwangsoo, Kim, Wanki, Ha, Daewon, Narayanan, Vijaykrishnan, Ni, Kai

“…In this work, with the goal of developing a large memory window (MW) ferroelectric field-effect transistor (FeFET) for high-density stand-alone storage…”
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Strategies for a Wide Memory Window of Ferroelectric FET for Multilevel Ferroelectric VNAND Operation by Myeong, Ilho, Kim, Hyoseok, Kim, Seunghyun, Lim, Suhwan, Kim, Kwangsu, Kim, Wanki, Ha, Daewon, Ahn, Sujin, Song, Jaihyuk

“…Basic gate stack structure of the Ferroelectric FET is Metal-ferroelectric-insulator-silicon (MFIS), where the memory window (M.W) is <inline-formula>…”
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A Large Window Nonvolatile Transistor Memory for High-Density and Low-Power Vertical NAND Storage Enabled by Ferroelectric Charge Pumping by Zhao, Zijian, Qin, Yixin, Duan, Jiahui, Lee, YuShan, Lim, Suhwan, Kim, Kijoon, Kim, Kwangsoo, Kim, Wanki, Ha, Daewon, Narayanan, Vijaykrishnan, Ni, Kai

“…In this work, we have developed a large memory window (MW) ferroelectric field effect transistor (FeFET) memory for vertical NAND storage. We demonstrate that:…”
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Using AHP to determine intangible priority factors for technology transfer adoption by Lee, Sangjae, Kim, Wanki, Kim, Young Min, Oh, Kyong Joo

“…► This research investigates the important intangible priority factors for the transfer of technology. ► First, the selection of priority factors of emerging…”
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Antecedents to Customer Repurchase in Korean Social Commerce Service by Lee, Suk-Jun, Youn, Myoung-Kil, Kim, Wanki

“…Recently, with the success of Groupon in the USA using the new business model referred to as social commerce, which is a commercial transaction involving group…”
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Material Choices for Tunnel Dielectric Layer and Gate Blocking Layer for Ferroelectric NAND Applications by Fernandes, Lance, Venkatesan Ravindran, Prasanna, Song, Taeyoung, Das, Dipjyoti, Park, Chinsung, Afroze, Nashrah, Tian, Mengkun, Chen, Hang, Chern, Winston, Kim, Kijoon, Woo, Jongho, Lim, Suhwan, Kim, Kwangsoo, Kim, Wanki, Ha, Daewon, Yu, Shimeng, Datta, Suman, Khan, Asif

“…We present an experimental study to compare the impacts of different dielectric materials - Al 2 O 3 and SiO 2 used as the tunnel dielectric layer (TDL) and…”
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Disturb and its mitigation in Ferroelectric Field-Effect Transistors with Large Memory Window for NAND Flash Applications by Venkatesan, Prasanna, Park, Chinsung, Song, Taeyoung, Fernandes, Lance, Das, Dipjyoti, Afroze, Nashrah, Ravikumar, Priyankka Gundlapudi, Tian, Mengkun, Chen, Hang, Chern, Winston, Kim, Kijoon, Woo, Jongho, Lim, Suhwan, Kim, Kwangsoo, Kim, Wanki, Ha, Daewon, Mahapatra, Souvik, Yu, Shimeng, Datta, Suman, Khan, Asif

“…We study the disturb characteristics of ferroelectric field-effect transistors (FEFETs) with band-engineered gate stacks. We demonstrate that integrating a…”
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