Search Results - "Wang, W.E."

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    Four-Extremity Gangrene Associated With Crack Cocaine Abuse by Dhawan, Saurabh S., MD, Wang, Benjamin W.E., MD

    Published in Annals of emergency medicine (01-02-2007)
    “…A 43-year-old woman with a history of cocaine abuse presented with decreased mental responsiveness and cyanosis of the extremities several hours after repeated…”
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    Journal Article
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    Impact of EOT scaling down to 0.85nm on 70nm Ge-pFETs technology with STI by Mitard, J., Shea, C., DeJaeger, B., Pristera, A., Wang, G., Houssa, M., Eneman, G., Hellings, G., Wang, W.E., Lin, J.C., Leys, F.E., Loo, R., Winderickx, G., Vrancken, E., Stesmans, A., DeMeyer, K., Caymax, M., Pantisano, L., Meuris, M., Heyns, M.

    Published in 2009 Symposium on VLSI Technology (01-06-2009)
    “…For the first time, an STI module is integrated in an advanced 70 nm Ge-pFET technology allowing EOT scaling down to 0.85 nm. Gate leakage is kept below…”
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    Conference Proceeding
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    Approaching fermi level unpinning in Oxide-In0.2Ga0.8As by Chiang, T. H., Lee, W.C., Lin, T.D., Lin, D., Shiu, K.H., Kwo, J., Wang, W.E., Tsai, W., Hong, M.

    “…Electrical characteristics of oxide-In 0.2 Ga 0.8 As interface in ultra-high vacuum (UHV)-deposited Al 2 O 3 (3 nm)/Ga 2 O 3 (Gd 2 O 3 ) (8.5 nm) on n- and…”
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    Conference Proceeding
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    Silicon and selenium implantation and activation in In 0.53Ga 0.47As under low thermal budget conditions by Alian, A., Brammertz, G., Waldron, N., Merckling, C., Hellings, G., Lin, H.C., Wang, W.E., Meuris, M., Simoen, E., Meyer, K. De, Heyns, M.

    Published in Microelectronic engineering (2011)
    “…Si and Se implantations have been systematically investigated in In 0.53Ga 0.47As. Different implant doses and various activation anneals with temperatures up…”
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    Journal Article
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    Iterative Feedback Tuning (IFT) of Hard Disk Drive Head Positioning Servomechanism by Al Mamun, A., Ho, W.Y., Wang, W.E., Lee, T.H.

    “…Hard disk drive (HDD) is a mass produced item so are its components including the actuator used for head positioning servomechanism. Transfer characteristics…”
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    Conference Proceeding
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    Enabling the high-performance InGaAs/Ge CMOS: a common gate stack solution by Lin, D., Brammertz, G., Sioncke, S., Fleischmann, C., Delabie, A., Martens, K., Bender, H., Conard, T., Tseng, W.H., Lin, J.C., Wang, W.E., Temst, K., Vatomme, A., Mitard, J., Caymax, M., Meuris, M., Heyns, M., Hoffmann, T.

    “…To address the integration of the high-mobility Ge/III-V MOSFET, a common gate stack (CGS) solution is proposed for the first time and demonstrated on Ge and…”
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    Conference Proceeding
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    Postponed development of disability in elderly runners: a 13-year longitudinal study by Wang, Benjamin W E, Ramey, Dena R, Schettler, Jared D, Hubert, Helen B, Fries, James F

    Published in Archives of internal medicine (1960) (11-11-2002)
    “…The magnitude and duration of the benefit of running and other aerobic exercise on disability and mortality in elderly persons are not well understood. We…”
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    Journal Article
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    The relationship of antiresorptive drug use to structural findings and symptoms of knee osteoarthritis by Carbone, Laura D., Nevitt, Michael C., Wildy, Kathryn, Barrow, Karen D., Harris, Fran, Felson, David, Peterfy, Charles, Visser, Marjolein, Harris, Tamara B., Wang, Benjamin W. E., Kritchevsky, Stephen B.

    Published in Arthritis and rheumatism (01-11-2004)
    “…Objective To examine the cross‐sectional association between use of medications that have a bone antiresorptive effect (estrogen, raloxifene, and alendronate)…”
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    Journal Article
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    Treatment of rheumatoid arthritis with total lymphoid irradiation: Long‐term survival by Uhrin, Zuzana, Wang, Benjamin W. E., Matsuda, Yuko, Strober, Samuel, Genovese, Mark C.

    Published in Arthritis and rheumatism (01-07-2001)
    “…Objective Total lymphoid irradiation (TLI) has been used to treat rheumatoid arthritis (RA) since the 1970s. This study reviews long‐term (15–20‐year)…”
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    Journal Article