Search Results - "Wan, Xinggong"
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Fast Wafer-Level Stress-and-Sense Methodology for Characterization of Ring-Oscillator Degradation in Advanced CMOS Technologies
Published in IEEE transactions on electron devices (01-05-2015)“…Ring oscillators (ROs) are widely used to study the degradation of logic CMOS circuits. To successfully link the time dependence of the ROs frequency…”
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A quantitative study of Phosphorous implantation damage on the thick gate oxide of the 28 nm node
Published in Microelectronics and reliability (01-09-2014)Get full text
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3
Electrical Characteristics of LDD and LDD-Free FinFET Devices of Dimension Compatible With 14 nm Technology Node
Published in IEEE journal of the Electron Devices Society (2020)“…FinFET devices with and without LDD implantation has been studied for dimensions compatible with leading 14nm technology node. Devices without LDD have better…”
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A new polymer thin film with electrical bistable states
Published in Physica status solidi. A, Applications and materials science (01-07-2005)“…Thin film polyethylene naphthalate (PEN) with electrical bistable states at room temperature has been obtained by vacuum deposition. The grain size of the film…”
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Improvement of the phase formation and superconductivity of the (Bi, Pb) 2Sr2Ca2Cu3Ox silver-sheathed tapes with B2O3 addition
Published in Physica. C, Superconductivity (01-05-1998)Get full text
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6
Voltage Ramp Stress Test Optimization for Wafer Level Hot Carrier Monitoring in FinFET
Published in 2023 IEEE International Reliability Physics Symposium (IRPS) (01-03-2023)“…Inline voltage ramp stress (VRS) is used for fast wafer level reliability (fWLR) monitoring. For hot carrier injection (HCI) degradation, saturation current is…”
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Conference Proceeding -
7
Energy effect in switching of PAR thin film as an electrical bistable material
Published in Physica status solidi. A, Applied research (01-01-2004)“…A PAR thin film involved in a sandwich structure of Al/PAR/Al was prepared by vacuum evaporation. The electrical bistable switching phenomenon of the PAR thin…”
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8
Enhanced flux pinning of Bi-2223/Ag tapes with nano-MgO particles addition
Published in Physica. C, Superconductivity (01-10-1998)“…For the purpose of producing flux pinning centers, nano-MgO particles have been introduced into (Bi,Pb) 2)Sr 2Ca 2Cu 3O x silver-sheathed (hereafter:…”
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9
The Power Effect in Write-in Process of Ag-TCNQ Electric Recording Thin Film
Published in Physica status solidi. A, Applied research (01-10-2000)Get full text
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A quantitative study of Phosphorous implantation damage on the thick gate oxide of the 28nm node
Published in Microelectronics and reliability (01-09-2014)“…The tilted Phosphorous implantation has for a long time been adopted to form the lightly doped drain (LDD). For the first time, we report the implantation…”
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11
The power effect in write-in process of Ag-TCNQ electric recording thin film
Published in Physica status solidi. A, Applied research (01-10-2000)Get full text
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12
c-Axis I-V Characteristics in Highly c-Axis-Oriented (Bi,Pb)2Sr2Ca2Cu3Ox Silver-Sheathed Tapes
Published in Physica status solidi. A, Applied research (01-08-1998)“…We have measured c‐axis I–V characteristics of highly c‐axis‐oriented (Bi,Pb)2Sr2Ca2Cu3Ox silver‐sheathed tapes (Bi2223/Ag) in the field H ≤ 0.5 T near Tc (80…”
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13
Effect of liquid nitrogen quenching on phase formation in (Bi, Pb)-2223/Ag tapes
Published in Physica status solidi. A, Applied research (16-03-1999)Get full text
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14
Nano-MgO particle addition in silver-sheathed (Bi,Pb)2Sr2Ca2Cu3Ox tapes
Published in Physica. C, Superconductivity (01-07-2000)“…Nano-MgO particles have been introduced into Bi-2223/Ag tapes fabricated by the rod-in-tube process. The effect of MgO on the high-Tc (Bi-2223) phase…”
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15
Nano-MgO particle addition in silver-sheathed (Bi,Pb) sub(2)Sr sub(2)Ca sub(2)Cu sub(3)O sub(x) tapes
Published in Physica. C, Superconductivity (01-07-2000)“…Nano-MgO particles have been introduced into Bi-2223/Ag tapes fabricated by the rod-in-tube process. The effect of MgO on the high-T sub(c) (Bi-2223) phase…”
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16
Effect of nanometer Ca sub(2)PbO sub(4) precipitates on flux pinning in Bi-2223/Ag tapes
Published in Physica. C, Superconductivity (01-07-2000)“…For the purpose of introducing extra flux pinning centers, nanometer Ca sub(2)PbO sub(4) precipitates were produced in (Bi,Pb) sub(2)Sr sub(2)Ca sub(2)Cu…”
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17
The effect of nanometer Ca2PbO4 precipitates on flux pinning in Bi-2223/Ag tapes
Published in Physica. C, Superconductivity (01-07-2000)“…Nanometer Ca2PbO4 precipitates were produced in (Bi,Pb)2Sr2Ca2Cu3Ox Ag-sheathed tapes by means of post-annealing the fabricated tapes in flowing O. The…”
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Journal Article -
18
Improvement of the phase formation and superconductivity of the (Bi,Pb) 2Sr 2Ca 2Cu 3O x silver-sheathed tapes with B 2O 3 addition
Published in Physica. C, Superconductivity (1998)“…In (Bi,Pb) 2Sr 2Ca 2Cu 3O x silver-sheathed (Bi2223/Ag) tapes, melted liquid phase plays an important role to form the Bi2223 phase. We have added a small…”
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Effect of Liquid Nitrogen Quenching on Phase Formation in (Bi, Pb)-/2223Ag Tapes
Published in Physica status solidi. A, Applied research (01-03-1999)“…The effect of liquid‐nitrogen (LN2) quenching on the phase formation and critical current density (Jc) of (Bi, Pb)‐2223 silver‐sheathed tapes has been studied…”
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