Search Results - "Walstra, Steven V"

EXTENSION OF THE McNUTT-SAH METHOD FOR MEASURING THIN OXIDE THICKNESSES OF MOS DEVICES by Walstra, Steven V., Sah, Chih-Tang

“…Oxide capacitance and thickness are critical parameters in MOS process monitoring and device modeling. For process monitoring, where rapid results and minimum…”
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Effect of intrinsic capacitance degradation on circuit performance by Dai, Changhong, Walstra, Steven V, Lee, Shiuh-Wuu

“…The effect of intrinsic capacitance degradation on circuit performance has been investigated. Results show that: (1) the measured C sub(gd) decreases while C…”
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Thin oxide thickness extrapolation from capacitance-voltage measurements by Walstra, S.V., Chih-Tang Sah

“…Five oxide-thickness extrapolation algorithms, all based on the same model (metal gate, negligible interface traps, no quantum effects), are compared to…”
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EXTENSION OF THE M cNUTT-SAH METHOD FOR MEASURING THIN OXIDE THICKNESSES OF MOS DEVICES by Walstra, Steven V., Sah, Chih-Tang

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Circuit-level modeling of soft errors in integrated circuits by Walstra, S.V., Changhong Dai

“…This paper describes the steps necessary to develop a soft-error methodology that can be used at the circuit-simulation level for accurate nominal soft-error…”
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