Search Results - "Wallace, R.M"

Interfacial chemistry of oxides on InxGa(1−x)As and implications for MOSFET applications by Hinkle, C.L., Vogel, E.M., Ye, P.D., Wallace, R.M.

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Transition metal dichalcogenide and hexagonal boron nitride heterostructures grown by molecular beam epitaxy by Barton, A.T., Yue, R., Anwar, S., Zhu, H., Peng, X., McDonnell, S., Lu, N., Addou, R., Colombo, L., Kim, M.J., Wallace, R.M., Hinkle, C.L.

“…Heterostructures coupling transition metal dichalcogenides (TMDs) and insulating hexagonal boron nitride (h-BN) were grown by molecular beam epitaxy (MBE)…”
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Oral bait handout as a method to access roaming dogs for rabies vaccination in Goa, India: A proof of principle study by Gibson, A D, Yale, G, Vos, A, Corfmat, J, Airikkala-Otter, I, King, A, Wallace, R M, Gamble, L, Handel, I G, Mellanby, R J, Bronsvoort, B M de C, Mazeri, S

“…Rabies has profound public health, social and economic impacts on developing countries, with an estimated 59,000 annual human rabies deaths globally. Mass dog…”
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A novel thermally-stable zirconium amidinate ALD precursor for ZrO2 thin films by LEE, B, CHOI, K. J, SUYDAM, J, HANDE, A, KIM, M. J, WALLACE, R. M, KIM, J, SENZAKI, Y, SHENAI, D, LI, H, ROUSSEAU, M

“…ZrO2 thin films were deposited by the atomic layer deposition process on Si substrates using tetrakis(N,N'-dimethylacetamidinate) zirconium (Zr-AMD) as a Zr…”
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Line shape and composition of the In 3d5/2 core-level photoemission for the interface analysis of In-containing III–V semiconductors by Mäkelä, J., Tuominen, M., Kuzmin, M., Yasir, M., Lång, J., Punkkinen, M.P.J., Laukkanen, P., Kokko, K., Schulte, K., Osiecki, J., Wallace, R.M.

“…•Photoelectron study of the controversial In 3d line shape of III–V semiconductors.•The spectral envelope is found to be fit well by a combination of symmetric…”
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In situ X-ray photoelectron spectroscopy characterization of Al2O3/InSb interface evolution from atomic layer deposition by Zhernokletov, D.M., Dong, H., Brennan, B., Kim, J., Wallace, R.M.

“…An in situ half-cycle atomic layer deposition/X-ray photoelectron spectroscopy (ALD/XPS) study was conducted in order to investigate the evolution of the Al2O3…”
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Surface passivation and implications on high mobility channel performance (Invited Paper) by Hinkle, C.L., Milojevic, M., Vogel, E.M., Wallace, R.M.

“…We review our recent studies of the passivation of the GaAs and InGaAs surface using a combination of in situ and ex situ surface analysis and capacitor…”
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Electrical properties of atomic-layer-deposited La2O3 films using a novel La formamidinate precursor and ozone by LEE, B, PARK, T. J, SHENAI, D, SUYDAM, J, HANDE, A, KIM, M. J, WALLACE, R. M, KIM, J, LIU, X, YI, J. H, LI, H, ROUSSEAU, M

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Imported human rabies in Switzerland, 2012: A diagnostic conundrum by Deubelbeiss, A.N, Trachsel, Ch, Bachli, E.B, Kuffer, A, Budka, H, Eniseyskiy, P, Zimmermann, H, Wallace, R.M, Farley, S, Zanoni, R.G

“…Abstract Human rabies is rare in Western Europe. It is not easily recognized in the absence of a history of exposure. We describe the clinical course,…”
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Characterization of conductance under finite bias for a self-assembled monolayer coated Au quantized point contact by Zheng, T., Jia, H., Wallace, R.M., Gnade, B.E.

“…We have demonstrated that an experimental cross-wire junction set-up can be used to measure the I– V characteristics of a self-assembled monolayer (SAM)…”
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Low-temperature deposition of hafnium silicate gate dielectrics by Punchaipetch, P., Pant, G., Quevedo-Lopez, M.A., Yao, C., El-Bouanani, M., Kim, M.J., Wallace, R.M., Gnade, B.E.

“…The physical and electrical properties of hafnium silicate (HfSi/sub x/O/sub y/) films produced by low-temperature processing conditions (/spl les/150/spl…”
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Hafnium silicate formation by ultra-violet/ozone oxidation of hafnium silicide by Punchaipetch, P, Pant, G, Quevedo-Lopez, M, Zhang, H, El-Bouanani, M, Kim, M.J, Wallace, R.M, Gnade, B.E

“…We report the room temperature growth of hafnium silicate by ultra-violet/ozone oxidation of hafnium silicide. Hafnium silicide was deposited by magnetron…”
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Carbon-Based Supercapacitors Produced by Activation of Graphene by Zhu, Yanwu, Murali, Shanthi, Stoller, Meryl D., Ganesh, K. J., Cai, Weiwei, Ferreira, Paulo J., Pirkle, Adam, Wallace, Robert M., Cychosz, Katie A., Thommes, Matthias, Su, Dong, Stach, Eric A., Ruoff, Rodney S.

“…Supercapacitors, also called ultracapacitors or electrochemical capacitors, store electrical charge on high-surface-area conducting materials. Their widespread…”
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Investigating interface states and oxide traps in the MoS2/oxide/Si system by Coleman, E., Mirabelli, G., Bolshakov, P., Zhao, P., Caruso, E., Gity, F., Monaghan, S., Cherkaoui, K., Balestra, V., Wallace, R.M., Young, C.D., Duffy, R., Hurley, P.K.

“…This paper reports on the study of inverted metal-oxide semiconductor (MOS) structures formed through mechanical exfoliation of MoS2 flakes onto Al2O3 or SiO2…”
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Estimating the effectiveness of vaccine programs in dog populations by Wallace, R M, Undurraga, E A, Gibson, A, Boone, J, Pieracci, E G, Gamble, L, Blanton, J D

“…Dogs harbor numerous zoonotic pathogens, many of which are controlled through vaccination programs. The delivery of these programs can be difficult where…”
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Scaling of HfO2 dielectric on CVD graphene by McDonnell, S., Azcatl, A., Mordi, G., Floresca, C., Pirkle, A., Colombo, L., Kim, J., Kim, M., Wallace, R.M.

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Is interfacial chemistry correlated to gap states for high-k/III–V interfaces? by Wang, W., Hinkle, C.L., Vogel, E.M., Cho, K., Wallace, R.M.

“…A combination of in situ surface analysis and first principles modeling indicate that oxidation of III-Arsenide interfaces results in defects which induce gap…”
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In situ X-ray photoelectron spectroscopy characterization of Al2O3/GaSb interface evolution by MCDONNELL, S, ZHERNOKLETOV, D. M, KIRK, A. P, KIM, J, WALLACE, R. M

“…GaSb(001) was treated with (NH4)2Sx and the evolution of the interfacial chemistry was investigated, in situ, with monochromatic XPS, following heat treatment…”
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Electrical characterization of top-gated molybdenum disulfide metal–oxide–semiconductor capacitors with high-k dielectrics by Zhao, P., Vyas, P.B., McDonnell, S., Bolshakov-Barrett, P., Azcatl, A., Hinkle, C.L., Hurley, P.K., Wallace, R.M., Young, C.D.

“…Top-gated metal-oxide-semiconductor (MOS) capacitor test structures were fabricated with 30 nm HfO sub(2) and Al sub(2)O sub(3) thin films by atomic layer…”
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In situ X-ray photoelectron spectroscopy characterization of Al 2O 3/GaSb interface evolution by McDonnell, S., Zhernokletov, D.M., Kirk, A.P., Kim, J., Wallace, R.M.

“…► 300°C annealing causes the O and S bonded to Sb to transfer to Ga ► 300°C annealing causes leaves the top 5-6 nm of the substrate Sb rich ► TMA reduces the…”
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