Search Results - "Walcher, H"

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  1. 1

    112 Gb/s field trial of complete ETDM system based on monolithically integrated transmitter & receiver modules for use in 100GbE by Li, J, Schubert, C, Derksen, R H, Makon, R E, Hurm, V, Djupsjöbacka, A, Chacinski, M, Westergren, U, Bach, H.-G, Mekonnen, G G, Steffan, A G, Driad, R, Walcher, H, Rosenzweig, J

    “…112 Gb/s field trial demonstration of a complete ETDM system based on monolithically integrated transmitter and receiver modules was achieved for the first…”
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    Conference Proceeding
  2. 2

    Influence of feedstock preparation on ceramic injection molding and microstructural features of zirconia toughened alumina by Sommer, Frank, Walcher, Hartmut, Kern, Frank, Maetzig, Marko, Gadow, Rainer

    Published in Journal of the European Ceramic Society (01-03-2014)
    “…Feedstocks for ceramic injection molding of ZTA containing 90vol.% of sub-μm alumina and 10vol.% of zirconia nanopowder were prepared by different processing…”
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    Journal Article
  3. 3

    40 GHz broadband optical receiver combining a multimode waveguide photodiode flip-chip mounted on a GaAs-based HEMT distributed amplifier by Leven, A., Hurm, V., Bronner, W., Kohler, K., Walcher, H., Kiefer, R., Fleissner, J., Rosenzweig, J., Schlechtweg, M.

    “…A 40 GHz bandwidth, 1.55 /spl mu/m wavelength photoreceiver for high-speed digital and microwave-via-fiber applications is presented. The photoreceiver…”
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    Conference Proceeding Journal Article
  4. 4

    Interspecific competition between the principal larval parasitoids of the pine sawfly, Neodiprion sertifer (Geoff.) (Hym.: Diprionidae) by Pschorn-Walcher, H

    Published in Oecologia (01-10-1987)
    “…Interspecific competition between the 3 principal larval parasitoids of the pine sawfly, Neodiprion sertifer, is of common occurrence when total larval…”
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    Journal Article
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    InP DHBT-Based IC Technology for 100-Gb/s Ethernet by Driad, R., Rosenzweig, J., Makon, R. E., Losch, R., Hurm, V., Walcher, H., Schlechtweg, M.

    Published in IEEE transactions on electron devices (01-08-2011)
    “…It is now clear that 112-Gb/s data rate is the next step in the network evolution (100-Gb/s Ethernet). Due to its high speed and high breakdown voltage, the…”
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    Journal Article
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    Fractal structures for low-resistance large area AlGaN/GaN power transistors by Reiner, R., Waltereit, P., Benkhelifa, F., Muller, S., Müller, S., Walcher, H., Wagner, S., Quay, R., Schlechtweg, M., Ambacher, O.

    “…This work introduces a new design approach for the use of fractal structures for low-resistance large area transistors structures. Aspects of layout with…”
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    Conference Proceeding
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    Ultra-High-Speed Transmitter and Receiver ICs for 100 Gbit/s Ethernet Using InP DHBTs by Makon, R. E., Driad, R., Rosenzweig, J., Hurm, V., Schubert, C., Walcher, H., Schlechtweg, M., Ambacher, O.

    “…Key components and architecture options are being actively investigated to realize next generation transport technology in optical networks. Serial…”
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    Conference Proceeding
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    A flexible, module-based SoC-approach for low-power VoIP-applications by Fugger, P., Graf, J., Denkner, C., Muller, F., Oitzl, E., Walcher, H., Waldner, M., Salzmann, J., Steiner, M.

    “…A system on chip (SoC) is presented, which is suitable for both conventional telephony via the public switched telephone network (PSTN) and voice over Internet…”
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    Conference Proceeding
  13. 13

    Reliability and degradation mechanism of 0.25 µm AlGaN/GaN HEMTs under RF stress conditions by Dammann, M., Baeumler, M., Gutle, F., Casar, M., Walcher, H., Waltereit, P., Bronner, W., Muller, S., Kiefer, R., Quay, R., Mikulla, M., Ambacher, O., Graff, A., Altmann, F., Simon, M.

    “…The reliability and degradation mechanism of AlGaN/GaN single stage amplifiers after 10 GHz stress at a drain voltage of 42 V and channel temperatures above…”
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    Conference Proceeding
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    Broadband 1.7-2.8 GHz high-efficiency (58%), high-power (43 dBm) Class-BJ GaN power amplifier including package engineering by Ture, E., Carrubba, V., Maroldt, S., Musser, M., Walcher, H., Quay, R., Ambacher, O.

    Published in 2014 44th European Microwave Conference (01-10-2014)
    “…In this paper a broadband high-efficiency Class-BJ GaN HEMT-PA for wireless communication applications is realized. Influences of packaging and bond wires on…”
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    Conference Proceeding
  16. 16

    Broadband 1.7-2.8 GHz high-efficiency (58%), high-power (43 dBm) Class-BJ GaN power amplifier including package engineering by Ture, E., Carrubba, V., Maroldt, S., Muser, M., Walcher, H., Quay, R., Ambacher, O.

    “…In this paper a broadband high-efficiency Class-BJ GaN HEMT-PA for wireless communication applications is realized. Influences of packaging and bond wires on…”
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    Conference Proceeding
  17. 17

    Dual-band Class-ABJ AlGaN/GaN high power amplifier by Carrubba, V., Maroldt, S., Musser, M., Walcher, H., Schlechtweg, M., Quay, R., Ambacher, O.

    Published in 2012 42nd European Microwave Conference (01-10-2012)
    “…This paper presents a dual-band multiharmonic Class-ABJ high power amplifier (PA) realized in AlGaN/GaN technology. In the Class-ABJ theory power and…”
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    Conference Proceeding
  18. 18

    Exploring organizational culture linkages to project management implementation among aerospace defense contractors by Walcher, James H

    Published 01-01-2012
    “…The purpose of the qualitative phenomenological research study was to explore the perceptions of project managers regarding elements of the organizational…”
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    Dissertation
  19. 19

    Dual-band Class-ABJ AlGaN/GaN high power amplifier by Carrubba, V., Maroldt, S., Musser, M., Walcher, H., Schlechtweg, M., Quay, R., Ambacher, O.

    “…This paper presents a dual-band multiharmonic Class-ABJ high power amplifier (PA) realized in AlGaN/GaN technology. In the Class-ABJ theory power and…”
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    Conference Proceeding
  20. 20

    An approach for a flexilble interface platform by Jenkner, C., Walcher, H.

    “…In many modern communication SoC-designs the ability of connecting to a wide range of network processors is very important. This is true especially in cases…”
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    Conference Proceeding