Search Results - "Wachutka, Gerhard"

4H–SiC vertical magnetotransistor with microtesla detectivity up to 500 °C by Okeil, Hesham, Wachutka, Gerhard

“…In this Letter, we demonstrate the operation of an in-plane magnetic field sensitive 4H–SiC vertical magnetotransistor over a wide range of temperatures,…”
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Publisher's Note: “4H–SiC vertical magnetotransistor with microtesla detectivity up to 500 °C” [Appl. Phys. Lett. 124, 192101 (2024)] by Okeil, Hesham, Wachutka, Gerhard

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A Perspective on Magnetic Field Sensors Operating Under Extreme High-Temperature Conditions by Okeil, Hesham, Wachutka, Gerhard

“…We compare alternative concepts of magnetic field sensors, which are capable of working under very high and even extreme temperature conditions, and outline…”
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Very High In‐Plane Magnetic Field Sensitivity in Ion‐Implanted 4H‐SiC PIN Diodes by Okeil, Hesham, Erlbacher, Tobias, Wachutka, Gerhard

“…In this study ion‐implanted lateral 4H‐SiC pin diodes are reported, which show an unexpectedly high room temperature in‐plane magnetic field sensitivity…”
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Virtual testing of high power devices at the rim of the safe operating area and beyond by Wachutka, Gerhard

“…The development of high-performance power devices is increasingly supported by predictive computer simulations on the basis of well-calibrated physical device…”
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Electrothermal simulation of multichip-modules with novel transient thermal model and time-dependent boundary conditions by Gerstenmaier, Y.C., Castellazzi, A., Wachutka, G.K.M.

“…The ability of monitoring the chip temperatures of power semiconductor modules at all times under various realistic working conditions is the basis for…”
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Reliability analysis and modeling of power MOSFETs in the 42-V-PowerNet by Castellazzi, A., Gerstenmaier, Y.C., Kraus, R., Wachutka, G.K.M.

“…This paper analyzes the operation of PowerMOSFETs in the 42-V-PowerNet and shows that very stressful conditions are encountered, which can lead to severe…”
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4H-SiC Lateral Magnetotransistor With Sub-Microtesla In-Plane Magnetic Field Detectivity by Okeil, Hesham, Wachutka, Gerhard

“…In this letter, we report on the first 4H-SiC based lateral magnetotransistor. The sensor is fabricated in a 4H-SiC wafer scale Bipolar-CMOS-DMOS (BCD)…”
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500 °C Microtesla Sensitive Magnetic Field Sensing Using a 4H-SiC PIN Diode by Okeil, Hesham, Wachutka, Gerhard

“…Wide bandgap (WBG) semiconductors possess a large potential for the development of sensors operating in harsh environments. In this article, we present an…”
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High-Throughput Apparatus for Semiconductor Device Characterization in a Magnetic Field at Extreme High Temperatures by Okeil, Hesham, Schrag, Gabriele, Wachutka, Gerhard

“…We report on the development of a 600 °C withstanding low-noise apparatus, which enables high-throughput magnetic-field-dependent characterization of…”
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Design and Simulation of Novel Low-Voltage CMOS Vertical Hall Devices With Capacitively Coupled Measuring Contacts by Okeil, Hesham, Schrag, Gabriele, Wachutka, Gerhard

“…In this article, we introduce the novel concept of capacitively coupled measuring contacts (CCMCs) for microscaled vertical Hall sensors. Using dedicated…”
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Sensitivity enhancement of MEMS inertial sensors using negative springs and active control by Handtmann, Martin, Aigner, Robert, Meckes, Andreas, Wachutka, Gerhard K.M.

“…In this paper, we present a device in which the inherent control scheme of force-feedback loops in Σ/ Δ-architecture [1] is used for increasing the mechanical…”
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Thermoelectric converters with optimum graded materials and current distribution in one dimension and three dimensions by Gerstenmaier, York Christian, Wachutka, Gerhard

“…The description of TE‐converter performance with inhomogeneous material distribution is based on the classical Onsager–deGroot–Callen transport theory. A…”
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Convex corner undercutting of silicon in anisotropic KOH etching: the new step-flow model of 3-D structuring and first simulation results by Schroder, H., Obermeier, E., Horn, A., Wachutka, G.K.M.

“…In this paper, the mechanism of convex corner (CC) undercutting of Si/sub {100}/ in pure aqueous KOH solutions is revisited by proposing the step-flow model of…”
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Very High Temperature Hall Sensors in a Wafer‐Scale 4H‐SiC Technology by Okeil, Hesham, Erlbacher, Tobias, Wachutka, Gerhard

“…Abstract 4H‐SiC is a key enabler for realizing integrated electronics operating in harsh environments, which exhibit very high temperatures. Through advances…”
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Design and Simulation of a Novel Vertical Hall Sensor With High Negative Differential Sensitivity by Okeil, Hesham, Wachutka, Gerhard

“…We report on the design and simulation of a novel vertical Hall sensor, which exhibits highly nonlinear characteristics between Hall voltage and bias voltage,…”
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Computer-Based Investigations on the Reliability, Robustness, and Failure Mechanisms of High-Power Devices by Wachutka, Gerhard

“…Todays state of the art of predictive high-fidelity computer simulation of "failure and virtual destruction" is illustrated with reference to selected…”
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Macromodel-based simulation and measurement of the dynamic pull-in of viscously damped RF-MEMS switches by Niessner, Martin, Schrag, Gabriele, Iannacci, Jacopo, Wachutka, Gerhard

“…We present a physics-based multi-energy domain coupled macromodel that allows for the efficient simulation of the dynamic response of electrostatically…”
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Testing semiconductor devices at extremely high operating temperatures by Borthen, Peter, Wachutka, Gerhard

“…We developed a dedicated measurement set-up for the electrical and electrothermal characterization of semiconductor devices and microsystems under very…”
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Comparative study of contact topographies of 4.5kV SiC MPS diodes for optimizing the forward characteristics by Yaren Huang, Wachutka, Gerhard

“…The forward characteristics of MPS diodes is composed of two branches: the first one is determined by unipolar conductivity originating from the Schottky…”
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