Search Results - "Wachutka, G.K.M."

Convex corner undercutting of silicon in anisotropic KOH etching: the new step-flow model of 3-D structuring and first simulation results by Schroder, H., Obermeier, E., Horn, A., Wachutka, G.K.M.

“…In this paper, the mechanism of convex corner (CC) undercutting of Si/sub {100}/ in pure aqueous KOH solutions is revisited by proposing the step-flow model of…”
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Physically rigorous modeling of internal laser-probing techniques for microstructured semiconductor devices by Thalhammer, R.K., Wachutka, G.K.M.

“…The space- and time-resolved distributions of charge carriers and temperature in the interior of microstructured semiconductor devices have become accessible…”
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Transient temperature fields with general nonlinear boundary conditions in electronic systems by Gerstenmaier, Y.C., Wachutka, G.K.M.

“…Green's function representations of the solution of the heat conduction equation for general boundary conditions are generalized for the nonlinear, i.e.,…”
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Efficient calculation of transient temperature fields responding to fast changing heatsources over long duration in power electronic systems by Gerstenmaier, Y.C., Wachutka, G.K.M.

“…A method is presented, which describes the evolution of the complete temperature field in electronic systems by multiplication of two low order matrices, one…”
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Reliability analysis and modeling of power MOSFETs in the 42-V-PowerNet by Castellazzi, A., Gerstenmaier, Y.C., Kraus, R., Wachutka, G.K.M.

“…This paper analyzes the operation of PowerMOSFETs in the 42-V-PowerNet and shows that very stressful conditions are encountered, which can lead to severe…”
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Electrothermal simulation of multichip-modules with novel transient thermal model and time-dependent boundary conditions by Gerstenmaier, Y.C., Castellazzi, A., Wachutka, G.K.M.

“…The ability of monitoring the chip temperatures of power semiconductor modules at all times under various realistic working conditions is the basis for…”
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Problem-oriented modeling of coupled physical effects in microtransducers and electronic devices by Wachutka, G.K.M.

“…In the development and production of miniaturized electronic devices, integrated transducers and microsystems, computer simulations constitute a cost-effective…”
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Nonisothermal device simulation using the 2D numerical process/device simulator TRENDY and application to SOI-devices by Wolbert, P.B.M., Wachutka, G.K.M., Krabbenborg, B.H., Mouthaan, T.J.

“…The electrical characteristics of modern VLSI and ULSI device structures may be significantly altered by self-heating effects. The device modeling of such…”
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