Search Results - "WOLTER, S. D"

Characterization of plasma fluorinated zirconia for dental applications by X-ray photoelectron spectroscopy by Wolter, S.D., Piascik, J.R., Stoner, B.R.

“…► Using XPS we detailed chemical alteration stoichiometries at surface (and sub surface ∼40nm). ► Stoichiometries were noted to be a function of treatment…”
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Surface characterization of oxide growth on porous germanium films oxidized in air by Wolter, S.D., Tyler, T., Jokerst, N.M.

“…A time iterative surface analytical study of as-deposited and chlorinated nanoporous germanium (PGe) films oxidized in Class 1000 cleanroom air at room…”
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The effect of gold on platinum oxidation in homogeneous Au–Pt electrocatalysts by Wolter, S.D., Brown, B., Parker, C.B., Stoner, B.R., Glass, J.T.

“…Oxidation of Au–Pt thin films was carried out in ambient air at room temperature and characterized by X-ray photoelectron spectroscopy. The homogeneous films…”
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An investigation into the early stages of oxide growth on gallium nitride by Wolter, S.D, DeLucca, J.M, Mohney, S.E, Kern, R.S, Kuo, C.P

“…The early stages of thermal oxidation of gallium nitride epilayers in dry O 2 have been studied using surface sensitive analytical techniques and transmission…”
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X-ray photoelectron spectroscopy and x-ray diffraction study of the thermal oxide on gallium nitride by Wolter, S. D., Luther, B. P., Waltemyer, D. L., Önneby, C., Mohney, S. E., Molnar, R. J.

“…The oxidation of single crystal gallium nitride in dry air has been investigated. X-ray photoelectron spectroscopy (XPS) revealed minimal oxide growth at 450…”
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Textured growth of diamond on silicon via in situ carburization and bias-enhanced nucleation by WOLTER, S. D, STONER, B. R, GLASS, J. T, ELLIS, P. J, BUHAENKO, D. S, JENKINS, C. E, SOUTHWORTH, P

“…Ordered diamond films have been deposited on single-crystal silicon substrates via an in situ carburization followed by bias-enhanced nucleation. Textured…”
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Thermal conductivity of epitaxially textured diamond films by Wolter, S.D., Borca-Tasciuc, D.-A., Chen, G., Govindaraju, N., Collazo, R., Okuzumi, F., Prater, J.T., Sitar, Z.

“…The in-plane thermal conductivity of epitaxially textured, (1 0 0) diamond has been evaluated in comparison to (1 0 0) diamond possessing a random fiber…”
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Bias frequency, waveform and duty-cycle effects on the bias-enhanced nucleation of epitaxial diamond by Wolter, S.D., Okuzumi, F., Prater, J.T., Sitar, Z.

“…In contrast to conventional DC bias-enhanced nucleation, a pre-carburization step was not needed in the processing of epitaxial diamond on (1 0 0) silicon…”
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Fabrication and thermal evaluation of silicon on diamond wafers by ALEKSOV, A, WOLTER, S. D, PRATER, J. T, SITAR, Z

“…Silicon on diamond (SOD) is proposed as a superior alternative to conventional silicon on insulator (SOI) technology for silicon-based electronics. In this…”
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Silicon-on-diamond : An advanced silicon-on-insulator technology by ALEKSOV, A, LI, X, GOVINDARAJU, N, GOBIEN, J. M, WOLTER, S. D, PRATER, J. T, SITAR, Z

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Study of fusion bonding of diamond to silicon for silicon-on-diamond technology by Yushin, G. N., Wolter, S. D., Kvit, A. V., Collazo, R., Stoner, B. R., Prater, J. T., Sitar, Z.

“…Diamond films grown on silicon were polished to a root-mean-square roughness of 15 nm and bonded to (100) silicon in a dedicated ultrahigh vacuum bonding…”
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Wafer bonding of highly oriented diamond to silicon by Yushin, G.N., Aleksov, A., Wolter, S.D., Okuzumi, F., Prater, J.T., Sitar, Z.

“…Polished, highly oriented diamond (HOD) with an RMS roughness of less than 3 nm was bonded to single-side polished silicon wafers in ultra-high vacuum (UHV) at…”
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Processing routes for direct bonding of silicon to epitaxially textured diamond by Wolter, S.D., Yushin, G.N., Prater, J.T., Sitar, Z.

“…Direct bonding of (1 0 0) silicon to epitaxially textured diamond is reported. Fusion of the silicon wafers to the diamond specimens was conducted at high…”
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Wet thermal oxidation of GaN by Readinger, E. D., Wolter, S. D., Waltemyer, D. L., Delucca, J. M., Mohney, S. E., Prenitzer, B. I., Giannuzzi, L. A., Molnar, R. J.

“…Thermal oxidation of GaN was conducted at 700-900 degree C with O sub(2), N sub(2), and Ar as carrier gases for 525-630 Torr of H sub(2)O vapor. Upon oxidation…”
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Raman spectroscopic characterization of diamond films grown in a low-pressure flat flame by Wolter, S.D, Prater, J.T, Sitar, Z

“…Diamond films produced in the low-pressure flat flame have been examined using Raman spectroscopy. The effect of the oxy-acetylene gas mixture (R=O 2/C 2H 2…”
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Electron emission from diamond coated silicon field emitters by Liu, J., Zhirnov, V. V., Wojak, G. J., Myers, A. F., Choi, W. B., Hren, J. J., Wolter, S. D., McClure, M. T., Stoner, B. R., Glass, J. T.

“…Polycrystalline diamond thin films have been formed on single crystal silicon field emitters using bias-enhanced nucleation in a microwave plasma chemical…”
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The nucleation of highly oriented diamond on silicon via an alternating current substrate bias by Wolter, S. D., Borst, T. H., Vescan, A., Kohn, E.

“…A new bias-enhanced nucleation method of forming highly oriented diamond on Si(100) is reported using an alternating current bias source. The percentage of…”
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Direct fusion bonding of silicon to polycrystalline diamond by Wolter, S.D., Yushin, G.N., Okuzumi, F., Stoner, B.R., Prater, J.T., Sitar, Z.

“…High temperature fusion of silicon to diamond is reported. Polished, randomly oriented diamond films and unpolished (100) highly oriented diamond films were…”
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In situ growth rate measurement and nucleation enhancement for microwave plasma CVD of diamond by Stoner, B.R., Williams, B.E., Wolter, S.D., Nishimura, K., Glass, J.T.

“…Laser reflection interferometry (LRI) has been shown to be a useful in situ technique for measuring growth rate of diamond during microwave plasma chemical…”
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Bias-enhanced nucleation of highly oriented diamond on titanium carbide (111) substrates by Wolter, S. D., McClure, M. T., Glass, J. T., Stoner, B. R.

“…The bias-enhanced nucleation (BEN) technique has been applied to TiC(111) substrates and resulted in deposition of oriented diamond particles. The orientation…”
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