Search Results - "WOLANSKY, Dirk"

Impact of Temperature on the Resistive Switching Behavior of Embedded \hbox-Based RRAM Devices by Walczyk, C., Walczyk, D., Schroeder, T., Bertaud, T., Sowinska, M., Lukosius, M., Fraschke, M., Wolansky, D., Tillack, B., Miranda, E., Wenger, C.

“…Back-end-of-line integrated 1 × μm 2 TiN/HfO 2 /Ti/TiN MIM memory devices in a 0.25- μm complementary metal-oxide-semiconductor technology were built to…”
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Fast in situ X‐ray analysis of Ni silicide formation by Zaumseil, Peter, Wolansky, Dirk

“…Metal silicides are the preferred contact materials for metal‐oxide semiconductor (MOS) structures. With further technology development, the materials changed…”
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Impact of Temperature on the Resistive Switching Behavior of Embedded HfO2-Based RRAM Devices by WALCZYK, Christian, WALCZYK, Damian, WENGER, Christian, SCHROEDER, Thomas, BERTAUD, Thomas, SOWINSKA, Malgorzata, LUKOSIUS, Mindaugas, FRASCHKE, Mirko, WOLANSKY, Dirk, TILLACK, Bernd, MIRANDA, Enrique

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AlN/SiO2/Si3N4/Si(100)-Based CMOS Compatible Surface Acoustic Wave Filter With −12.8-dB Minimum Insertion Loss by Kaletta, Udo Christian, Wipf, Christian, Fraschke, Mirko, Wolansky, Dirk, Schubert, Markus Andreas, Schroeder, Thomas, Wenger, Christian

“…A CMOS compatible AlN/SiO 2 /Si 3 N 4 /Si(100) surface acoustic wave (SAW) device has been fabricated and will be compared with standard AlN/SiO 2 -based…”
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Contacting graphene in a 200 mm wafer silicon technology environment by Lisker, Marco, Lukosius, Mindaugas, Kitzmann, Julia, Fraschke, Mirko, Wolansky, Dirk, Schulze, Sebastian, Lupina, Grzegorz, Mai, Andreas

“…[Display omitted] •PECVD of silicon nitride on the graphene was used as the passivation layer.•Two approaches for producing contacts to graphene tested with…”
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Optical Stimulation Effects on TiO2 Sensor Dielectric Used in Capacitively-Coupled High-Density CMOS Microelectrode Array by Bertotti, Gabriel, Jetter, Florian, Keil, Stefan, Dodel, Normal, Schreiter, Matthias, Wolansky, Dirk, Boucsein, Clemens, Boven, Karl-Heinz, Zeck, Gunther, Thewes, Roland

“…The effect of optical stimulation of neural tissue is considered in capacitively coupled CMOS microelectrode arrays used for in vitro extracellular recording…”
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AlN/SiO 2 /Si 3 N 4 /Si(100)-Based CMOS Compatible Surface Acoustic Wave Filter With −12.8-dB Minimum Insertion Loss by Kaletta, Udo Christian, Wipf, Christian, Fraschke, Mirko, Wolansky, Dirk, Schubert, Markus Andreas, Schroeder, Thomas, Wenger, Christian

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Optical Stimulation Effects on TiO 2 Sensor Dielectric Used in Capacitively-Coupled High-Density CMOS Microelectrode Array by Bertotti, Gabriel, Jetter, Florian, Keil, Stefan, Dodel, Normal, Schreiter, Matthias, Wolansky, Dirk, Boucsein, Clemens, Boven, Karl-Heinz, Zeck, Gunther, Thewes, Roland

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SiGe p-n-p HBTs With 265-GHz fmax, 175-GHz fT, and 3.65-ps Gate Delay by HEINEMANN, Bernd, RÜCKER, Holger, TRUSCH, Andreas, WOLANSKY, Dirk, YAMAMOTO, Yuji, BARTH, Rainer, DREWS, Jürgen, FURSENKO, Oksana, GRABOLLA, Thomas, KURPS, Rainer, MARSCHMEYER, Steffen, SCHEIT, Alexander, SCHMIDT, Detlef

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SiGe p-n-p HBTs With 265-GHz f max, 175-GHz f T, and 3.65-ps Gate Delay by Heinemann, Bernd, Rucker, Holger, Barth, Rainer, Drews, Jurgen, Fursenko, Oksana, Grabolla, Thomas, Kurps, Rainer, Marschmeyer, Steffen, Scheit, Alexander, Schmidt, Detlef, Trusch, Andreas, Wolansky, Dirk, Yamamoto, Yuji

“…SiGe p-n-p heterojunction bipolar transistors (HBTs) are presented with f T /f max values of 175 GHz/265 GHz and a minimum current mode logic ring oscillator…”
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Thermal oxidation of chemical vapour deposited tungsten layers on silicon substrates for embedded non-volatile memory application by Sohal, Rakesh, Walczyk, Christian, Zaumseil, Peter, Wolansky, Dirk, Fox, Alexander, Tillack, Bernd, Müssig, Hans-Joachim, Schroeder, Thomas

“…This research is targeted to enhance the functionality of bipolar complementary metal-oxide-semiconductor by innovative concepts of embedded resistive random…”
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Wide range tuning of titanium nitride sheet resistance for thin film resistors by Wolansky, Dirk

“…In this paper, a significant extension of the Rs tuning range of sputtered titanium nitride (TiN) layers for thin film resistor (TFR) applications in a…”
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Impact of Temperature on the Resistive Switching Behavior of Embedded [Formula Omitted]-Based RRAM Devices by Walczyk, Christian, Walczyk, Damian, Schroeder, Thomas, Bertaud, Thomas, Sowinska, Malgorzata, Lukosius, Mindaugas, Fraschke, Mirko, Wolansky, Dirk, Tillack, Bernd, Miranda, Enrique, Wenger, Christian

“…Back-end-of-line integrated [Formula Omitted] MIM memory devices in a 0.25-[Formula Omitted] complementary metal-oxide-semiconductor technology were built to…”
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Impact of Temperature on the Resistive Switching Behavior of Embedded hbox HfO 2 -Based RRAM Devices by Walczyk, Christian, Walczyk, Damian, Schroeder, Thomas, Bertaud, Thomas, Sowinska, Malgorzata, Lukosius, Mindaugas, Fraschke, Mirko, Wolansky, Dirk, Tillack, Bernd, Miranda, Enrique, Wenger, Christian

“…Back-end-of-line integrated hbox 1 hbox 1 Unknown character mu hbox m 2 Unknown character hbox TiN / HfO 2 / break hbox Ti / TiN MIM memory devices in a 0.25-…”
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A CMOS-based sensor array for in-vitro neural tissue interfacing with 4225 recording sites and 1024 stimulation sites by Bertotti, Gabriel, Velychko, Dmytro, Dodel, Norman, Keil, Stefan, Wolansky, Dirk, Tillak, Bernd, Schreiter, Matthias, Grall, Andreas, Jesinger, Peter, Rohler, Sebastian, Eickenscheidt, Max, Stett, Alfred, Moller, Andreas, Boven, Karl-Heinz, Zeck, Gunther, Thewes, Roland

“…A CMOS-based microelectrode array (MEA) with 4225 recording sites and 1024 stimulation sites and a related data acquisition system are presented. The chip…”
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Development of a Through-Silicon Via (TSV) Process Module for Multi-project Wafer SiGe BiCMOS and Silicon Interposer by Wietstruck, M., Marschmeyer, S., Kulse, P., Voss, T., Lisker, M., Kruger, A., Wolansky, D., Fraschke, M., Kaynak, M.

“…In this work, the development of a Through-Silicon Via process module for multi-project wafer SiGe BiCMOS and silicon interposer is demonstrated. The TSV…”
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Three dimensional ALD of TiO2 for in-vivo biomedical sensor applications by Schroder, Sven, Dogan, Ozgu, Schneidewind, Jessica, Bertotti, Gabriel, Keil, Stefan, Gargouri, Hassan, Arens, Michael, Brose, Evelin, Bruns, Jurgen, Wolansky, Dirk, Tillack, Bernd, Vassanelli, Stefano, Szyszka, Bernd, Thewes, Roland

“…Titanium dioxide, known as a high-k biocompatible dielectric transducer material, is processed by means of ALD and applied to a 3D structure with dimensions…”
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A modular, low-cost SiGe:C BiCMOS process featuring high-fTand high-BVCEO transistors by KNOLL, Dieter, HEINEMANN, Bernd, HAAK, Ulrich, HÖPPNER, Wolfgang, KORNDÖRFER, Falk, KUCK, Beate, MARSCHMEYER, Steffen, RICHTER, Harald, RÜCKER, Holger, SCHLEY, Peter, SCHMIDT, Detlef, SCHOLZ, Rene, BARTH, Rainer, SENAPATI, Biswanath, TILLACK, Bernd, WINKLER, Wolfgang, WOLANSKY, Dirk, WOLF, Christoph, WULF, Hans-Erich, YAMAMOTO, Yuji, ZAUMSEIL, Peter, BLUM, Katrin, BORNGRÄBER, Johannes, DREWS, Jürgen, EHWALD, Karl-Emst, FISCHER, Gerhard, FOX, Alexander, GRABOLLA, Thomas

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