Search Results - "WITTERS, L"
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1
The blooming of the French lilac
Published in The Journal of clinical investigation (01-10-2001)Get full text
Journal Article -
2
First Demonstration of Vertically Stacked Gate-All-Around Highly Strained Germanium Nanowire pFETs
Published in IEEE transactions on electron devices (01-11-2018)“…This paper reports on 45-nm fin pitch strained p-type Ge gate-all-around devices fabricated on 300-mm SiGe strain-relaxed-buffers (SRB). By improving the…”
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Journal Article -
3
Superior NBTI in High- k SiGe Transistors–Part I: Experimental
Published in IEEE transactions on electron devices (01-05-2017)“…SiGe quantum-well pMOSFETs have recently been introduced for enhanced performance of transistors. Quite surprisingly, a significant reduction in negative bias…”
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4
Benchmarking SOI and bulk FinFET alternatives for PLANAR CMOS scaling succession
Published in Solid-state electronics (01-09-2010)“…The multi-gate architecture is considered as a key enabler for further CMOS scaling thanks to its improved electrostatics and short-channel effect control…”
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Journal Article Conference Proceeding -
5
Use of high order precursors for manufacturing gate all around devices
Published in Materials science in semiconductor processing (01-11-2017)“…Epitaxial growth of strained and defect free SiGe layers grown with disilane and digermane was investigated. This precursors set allows to cover a broad range…”
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6
Strained Germanium Gate-All-Around pMOS Device Demonstration Using Selective Wire Release Etch Prior to Replacement Metal Gate Deposition
Published in IEEE transactions on electron devices (01-11-2017)“…Strained Ge p-channel gate-all-around (GAA) devices with Si-passivation are demonstrated on high-density 45-nm active pitch starting from 300-mm SiGe strain…”
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7
Self-aligned double patterning process for subtractive Ge fin fabrication at 45-nm pitch
Published in Thin solid films (01-03-2016)“…The self-aligned double patterning scheme has been developed for subtractive Ge fin patterning targeting critical dimension (CD) <14nm at pitch of 45nm…”
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8
Superior NBTI in High-k SiGe Transistors-Part II: Theory
Published in IEEE transactions on electron devices (01-05-2017)“…The susceptibility of conventional silicon p-channel MOS transistors to negative bias temperature instabilities (NBTIs) is a serious threat to further device…”
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9
Record GmSAT/SSSAT and PBTI Reliability in Si-Passivated Ge nFinFETs by Improved Gate-Stack Surface Preparation
Published in IEEE transactions on electron devices (01-12-2019)“…This article reports Si-passivated Ge nFinFETs with significantly improved Gm SAT /SS SAT and positive bias temperature instability (PBTI) reliability enabled…”
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Journal Article -
10
AMP-activated protein kinase, super metabolic regulator
Published in Biochemical Society transactions (01-02-2003)“…The AMP-activated protein kinase (AMPK) is a metabolic-stress-sensing protein kinase that regulates metabolism in response to energy demand and supply by…”
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11
Troglitazone causes acute mitochondrial membrane depolarisation and an AMPK-mediated increase in glucose phosphorylation in muscle cells
Published in Diabetologia (01-05-2005)“…Troglitazone was the first thiazolidinedione (TZD) approved for clinical use, exerting hypoglycaemic effects related to its action as a ligand of the…”
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Journal Article -
12
3-D Sequential Stacked Planar Devices Featuring Low-Temperature Replacement Metal Gate Junctionless Top Devices With Improved Reliability
Published in IEEE transactions on electron devices (01-11-2018)“…3-D sequential integration requires top MOSFETs processed at a low thermal budget, which can impair the device reliability. In this paper, top junctionless…”
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Journal Article -
13
The Effects of AICAR on Adipocyte Differentiation of 3T3-L1 Cells
Published in Biochemical and biophysical research communications (07-09-2001)“…The AMP-activated protein kinase (AMPK) activator, 5-aminoimidazole-4-carboxamide ribonucleoside (AICAR), has been found to inhibit the differentiation of…”
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Journal Article -
14
PPARα Is Necessary for the Lipopenic Action of Hyperleptinemia on White Adipose and Liver Tissue
Published in Proceedings of the National Academy of Sciences - PNAS (03-09-2002)“…Adenovirus-induced hyperleptinemia causes rapid disappearance of body fat in normal rats, presumably by up-regulating fatty acid oxidation within white…”
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Journal Article -
15
Dissociation of AMP-activated protein kinase activation and glucose transport in contracting slow-twitch muscle
Published in Diabetes (New York, N.Y.) (01-08-2000)“…Dissociation of AMP-activated protein kinase activation and glucose transport in contracting slow-twitch muscle. W Derave , H Ai , J Ihlemann , L A Witters , S…”
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Journal Article -
16
Post-translational modifications of the beta-1 subunit of AMP-activated protein kinase affect enzyme activity and cellular localization
Published in Biochemical journal (01-03-2001)“…The AMP-activated protein kinase (AMPK) is a ubiquitous mammalian protein kinase important in the adaptation of cells to metabolic stress. The enzyme is a…”
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17
Metabolic stress and altered glucose transport: activation of AMP-activated protein kinase as a unifying coupling mechanism
Published in Diabetes (New York, N.Y.) (01-04-2000)“…Metabolic stress and altered glucose transport: activation of AMP-activated protein kinase as a unifying coupling mechanism. T Hayashi , M F Hirshman , N Fujii…”
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18
Strained germanium quantum well p-FinFETs fabricated on 45nm Fin pitch using replacement channel, replacement metal gate and germanide-free local interconnect
Published in 2015 Symposium on VLSI Technology (VLSI Technology) (01-06-2015)“…Strained Ge p-channel FinFETs on Strain Relaxed SiGe are integrated for the first time on high density 45nm Fin pitch using a replacement channel approach on…”
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Conference Proceeding Journal Article -
19
Enzymes of the fatty acid synthesis pathway are highly expressed in in situ breast carcinoma
Published in Clinical cancer research (01-11-1997)“…Expression of high levels of fatty acid synthase (FAS), an important enzyme in fatty acid synthesis, has been identified in a wide variety of human carcinomas…”
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Journal Article -
20
Anisotropic stress in narrow sGe fin field-effect transistor channels measured using nano-focused Raman spectroscopy
Published in APL materials (01-05-2018)“…The continued importance of strain engineering in semiconductor technology demands fast and reliable stress metrology that is non-destructive and process…”
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Journal Article