Search Results - "WIRTH, Emmanuel"

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  1. 1
    A mechanically switchable metal-insulator transition in Mg2NiH4 discovers a strain sensitive, nanoscale modulated resistivity connected to a stacking fault

    A mechanically switchable metal-insulator transition in Mg2NiH4 discovers a strain sensitive, nanoscale modulated resistivity connected to a stacking fault by LELIS, Martynas, MILCIUS, Darius, NOREUS, Dag, WIRTH, Emmanuel, HALENIUS, Ulf, ERIKSSON, Lars, JANSSON, Kjell, KADIR, Karim, JUANFANG RUAN, SATO, Toyoto, YOKOSAWA, Tadahiro

    Published in Journal of alloys and compounds (30-04-2010)
    “…The band gap in semiconducting Mg2NiH4 was found to be dependent on subtle structural differences. This was discovered when investigating if thin film samples…”
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  2. 2
    Exploring the hydrogen sorption capacity of Mg–Ni powders produced by the vapour deposition technique

    Exploring the hydrogen sorption capacity of Mg–Ni powders produced by the vapour deposition technique by Wirth, Emmanuel, Milcius, Darius, Filiou, Constantina, Noréus, Dag

    Published in International journal of hydrogen energy (01-06-2008)
    “…Nanocrystalline Mg–Ni alloy powder was produced via the magnetron co-sputtering technique. The samples obtained showed crystallisation of Mg and Mg2Ni and an…”
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    Journal Article Conference Proceeding
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  3. 3
    A mechanically switchable metal-insulator transition in Mg sub(2)NiH sub(4) discovers a strain sensitive, nanoscale modulated resistivity connected to a stacking fault

    A mechanically switchable metal-insulator transition in Mg sub(2)NiH sub(4) discovers a strain sensitive, nanoscale modulated resistivity connected to a stacking fault by Lelis, Martynas, Milcius, Darius, Wirth, Emmanuel, Haalenius, Ulf, Eriksson, Lars, Jansson, Kjell, Kadir, Karim, Ruan, Juanfang, Sato, Toyoto, Yokosawa, Tadahiro, Noreus, Dag

    Published in Journal of alloys and compounds (30-04-2010)
    “…The band gap in semiconducting Mg sub(2)NiH sub(4) was found to be dependent on subtle structural differences. This was discovered when investigating if thin…”
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    Journal Article
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  4. 4
    A mechanically switchable metal–insulator transition in Mg 2 NiH 4 discovers a strain sensitive, nanoscale modulated resistivity connected to a stacking fault

    A mechanically switchable metal–insulator transition in Mg 2 NiH 4 discovers a strain sensitive, nanoscale modulated resistivity connected to a stacking fault by Lelis, Martynas, Milcius, Darius, Wirth, Emmanuel, Hålenius, Ulf, Eriksson, Lars, Jansson, Kjell, Kadir, Karim, Ruan, Juanfang, Sato, Toyoto, Yokosawa, Tadahiro, Noréus, Dag

    Published in Journal of alloys and compounds (2010)
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  5. 5
    A mechanically switchable metal–insulator transition in Mg 2NiH 4 discovers a strain sensitive, nanoscale modulated resistivity connected to a stacking fault

    A mechanically switchable metal–insulator transition in Mg 2NiH 4 discovers a strain sensitive, nanoscale modulated resistivity connected to a stacking fault by Lelis, Martynas, Milcius, Darius, Wirth, Emmanuel, Hålenius, Ulf, Eriksson, Lars, Jansson, Kjell, Kadir, Karim, Ruan, Juanfang, Sato, Toyoto, Yokosawa, Tadahiro, Noréus, Dag

    Published in Journal of alloys and compounds (2010)
    “…The band gap in semiconducting Mg 2NiH 4 was found to be dependent on subtle structural differences. This was discovered when investigating if thin film…”
    Get full text
    Journal Article
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