Search Results - "WILSON, R.G."

Adaptive wavelet packet basis selection for zerotree image coding by Rajpoot, N.M., Wilson, R.G., Meyer, F.G., Coifman, R.R.

“…Image coding methods based on adaptive wavelet transforms and those employing zerotree quantization have been shown to be successful. We present a general…”
Get full text

Magnetic properties of Co- and Mn-implanted BaTiO3, SrTiO3 and KTaO3 by Lee, J.S., Khim, Z.G., Park, Y.D., Norton, D.P., Theodoropoulou, N.A., Hebard, A.F., Budai, J.D., Boatner, L.A., Pearton, S.J., Wilson, R.G.

Get full text

An improved quantitative measure of the tendency for volcanic ash plumes to form in water: implications for the deposition of marine ash beds by Jacobs, Christian T., Goldin, Tamara J., Collins, Gareth S., Piggott, Matthew D., Kramer, Stephan C., Melosh, H. Jay, Wilson, Cian R.G., Allison, Peter A.

“…Laboratory experiments and numerical simulations have shown that volcanic ash particles immersed in water can either settle slowly and individually, or rapidly…”
Get full text

Chicken or the leg: Sigmoid colon perforation by ingested poultry fibula proximal to an occult malignancy by Terrace, J.D, Samuel, J, Robertson, J.H, Wilson, R.G, Anderson, D.N

“…Abstract INTRODUCTION Colonic perforation by ingested foreign bodies is exceedingly rare, with the diagnosis made more challenging by patients infrequently…”
Get full text

Effects of defects and doping on wide band gap ferromagnetic semiconductors by Pearton, S.J, Abernathy, C.R, Thaler, G.T, Frazier, R, Ren, F, Hebard, A.F, Park, Y.D, Norton, D.P, Tang, W, Stavola, M, Zavada, J.M, Wilson, R.G

“…Both ion implantation and epitaxial crystal growth provide convenient methods of introducing transition metals such as Mn,Cr,Fe,Ni and Co into GaN, GaP, SiC…”
Get full text

High voltage GaN Schottky rectifiers by Dang, G.T., Zhang, A.P., Ren, F., Cao, X.A., Pearton, S.J., Cho, H., Han, J., Chyi, J.-I., Lee, C.-M., Chuo, C.-C., Chu, S.N.G., Wilson, R.G.

“…Mesa and planar GaN Schottky diode rectifiers with reverse breakdown voltages (V/sub RB/) up to 550 and >2000 V, respectively, have been fabricated. The…”
Get full text

Functional countability in GO spaces by Tkachuk, V.V., Wilson, R.G.

“…We prove that, for any GO space X, if ext(X)≤ω and X is either scattered or locally countable, then X is functionally countable. Every functionally countable…”
Get full text

Properties of Si donors and persistent photoconductivity in AlGaN by Polyakov, A.Y., Smirnov, N.B., Govorkov, A.V., Mil'vidskii, M.G., Redwing, J.M., Shin, M., Skowronski, M., Greve, D.W., Wilson, R.G.

“…The behavior of Si donors was studied in Al x Ga 1− x N films with composition 0< x<0.6. It is shown that the Si donors ionization energy increases from 18 meV…”
Get full text

ICP dry etching of ZnO and effects of hydrogen by Ip, K., Overberg, M.E., Baik, K.W., Wilson, R.G., Kucheyev, S.O., Williams, J.S., Jagadish, C., Ren, F., Heo, Y.W., Norton, D.P., Zavada, J.M., Pearton, S.J.

“…Two different plasma chemistries for etching ZnO were examined. Both Cl 2/Ar and CH 4/H 2/Ar produced etch rates which increased linearly with rf power,…”
Get full text

Luminescence characteristics of Er-doped GaN semiconductor thin films by Zavada, J.M, Thaik, Myo, Hömmerich, U, MacKenzie, J.D, Abernathy, C.R, Pearton, S.J, Wilson, R.G

“…Semiconductors doped with rare earth atoms have been studied for more than a decade because of the potential of using them to develop compact and efficient…”
Get full text

On discrete reflexivity of Lindelöf degree and pseudocharacter by Alas, O.T., Tkachuk, V.V., Wilson, R.G.

“…We establish that any Hausdorff discretely κ-Lindelöf space X must be κ-Lindelöf if t(X)≤κ. Besides, in κ-Lindelöf spaces whose tightness does not exceed κ,…”
Get full text

SELF-TRANSVERSAL SPACES AND THEIR DISCRETE SUBSPACES by JUHÁSZ, I., TKACHENKO, M.G., TKACHUK, V.V., WILSON, R.G.

“…A space X is called self-transversal if there is a bijection φ : X → X such that the family τ(X) U φ(τ(X)) forms a subbase of the discrete topology on X. We…”
Get full text

Ferromagnetism in Mn- and Cr-implanted AlGaP by Overberg, M.E., Thaler, G.T., Frazier, R.M., Rairigh, R., Kelly, J., Abernathy, C.R., Pearton, S.J., Hebard, A.F., Wilson, R.G., Zavada, J.M.

“…Implantation of Mn or Cr at doses of 3–5 × 10 16 cm −2 into Si-doped Al 0.24Ga 0.76P epilayers on GaP substrates produced ferromagnetic ordering at…”
Get full text

Implantation and redistribution of dopants and isolation species in GaN and related compounds by Wilson, R.G., Vartuli, C.B., Abernathy, C.R., Pearton, S.J., Zavada, J.M.

“…Twelve different elements used for doping or isolation were implanted into GaN (and selected species into AlN and InN), and the resulting range parameters were…”
Get full text

An ion-implanted diamond metal-insulator-semiconductor field-effect transistor by Zeisse, C.R., Hewett, C.A., Nguyen, R., Zeidler, J.R., Wilson, R.G.

“…A p-type conducting layer has been formed in a substrate of semi-insulating natural diamond (type IIa) by boron implantation. Silicon dioxide was deposited…”
Get full text

Classes defined by stars and neighbourhood assignments by van Mill, J., Tkachuk, V.V., Wilson, R.G.

“…We apply and develop an idea of E. van Douwen used to define D-spaces. Given a topological property P , the class P ∗ dual to P (with respect to neighbourhood…”
Get full text

Secondary ion mass spectrometry of dopant and impurity elements in wide bandgap semiconductors by Wilson, R.G., Zavada, J.M.

“…Based on secondary ion mass spectrometry (SIMS) measurements, we have compiled state-of-the-art data concerning dopant elements and natural impurities in the…”
Get full text

Redistribution of implanted dopants in GaN by Cao, X. A., Wilson, R. G., Zolper, J. C., Pearton, S. J., Han, J., Shul, R. J., Rieger, D. J., Singh, R. K., Fu, M., Scarvepalli, V., Sekhar, J. A., Zavada, J. M.

“…Donor (S, Se, and Te) and acceptor (Mg, Be, and C) dopants have been implanted into GaN at doses of 3-5x10 super(14) cm super(-2) and annealed at temperatures…”
Get full text

Hydrogen incorporation and its temperature stability in SiC crystals by Zavada, J.M, Wilson, R.G, Ren, F, Pearton, S.J, Davis, R.F

“…SiC is an important wide bandgap semiconductor material with use in high temperature electronics and as a substrate for III–V nitride epitaxial growth. In…”
Get full text

Box products are often discretely generated by Tkachuk, V.V., Wilson, R.G.

“…A space X is discretely generated if for any A ⊂ X and x ∈ A ¯ there exists a discrete set D ⊂ A such that x ∈ D ¯ . We prove that if X t is a monotonically…”
Get full text