Search Results - "WELLMANN, Peter J"

Power Electronic Semiconductor Materials for Automotive and Energy Saving Applications – SiC, GaN, Ga2O3, and Diamond by Wellmann, Peter J.

“…Power electronics belongs to the future key technologies in order to increase system efficiency as well as performance in automotive and energy saving…”
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The search for new materials and the role of novel processing routes by Wellmann, Peter J.

“…Throughout human history, most further developments or new achievements were accompanied by new materials or new processes that enabled the technologic…”
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Fabrication of SiC-on-Insulator (SiCOI) Layers by Chemical Vapor Deposition of 3C-SiC on Si-in-Insulator Substrates at Low Deposition Temperatures of 1120 °C by Steiner, Johannes, Schultheiß, Jana, Wang, Shouzhong, Wellmann, Peter J.

“…Compared to bulk silicon carbide (SiC) wafers, SiC-on-insulator (SiCOI) substrates enable new device designs of electronic switches as well as novel photonic…”
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Analysis of the Basal Plane Dislocation Density and Thermomechanical Stress during 100 mm PVT Growth of 4H-SiC by Steiner, Johannes, Roder, Melissa, Nguyen, Binh Duong, Sandfeld, Stefan, Danilewsky, Andreas, Wellmann, Peter J

“…Basal plane dislocations (BPDs) in 4H silicon carbide (SiC) crystals grown using the physical vapor transport (PVT) method are diminishing the performance of…”
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Electrical, optical and morphological properties of nanoparticle indium–tin–oxide layers by Gross, Michael, Winnacker, Albrecht, Wellmann, Peter J.

“…Porous layers were prepared from DEGUSSA's ITO (In 2O 3:Sn) nanoparticle dispersion by doctor blading followed by annealing in air. We investigated the…”
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Multiscale Simulations for Defect-Controlled Processing of Group IV Materials by Calogero, Gaetano, Deretzis, Ioannis, Fisicaro, Giuseppe, Kollmuß, Manuel, La Via, Francesco, Lombardo, Salvatore F., Schöler, Michael, Wellmann, Peter J., La Magna, Antonino

“…Multiscale approaches for the simulation of materials processing are becoming essential to the industrialization of future nanotechnologies, as they allow for…”
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Ceramic liner technology for ammonoacidic synthesis by Hertweck, Benjamin, Schimmel, Saskia, Steigerwald, Thomas G., Alt, Nicolas S.A., Wellmann, Peter J., Schluecker, Eberhard

“…•Corrosion behaviour of several ceramics under ammonothermal conditions.•Technical ceramics include: nitride and nitride bonded silicon carbide…”
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Impact of Mechanical Stress and Nitrogen Doping on the Defect Distribution in the Initial Stage of the 4H-SiC PVT Growth Process by Steiner, Johannes, Wellmann, Peter J

“…Nitrogen incorporation changes the lattice spacing of SiC and can therefore lead to stress during physical vapor transport (PVT). The impact of the…”
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Conductivity and adhesion enhancement in low-temperature processed indium tin oxide/polymer nanocomposites by Maksimenko, Ilja, Gross, Michael, Königer, Tobias, Münstedt, Helmut, Wellmann, Peter J.

“…We report on the conductivity and adhesion enhancement of indium tin oxide (In 2O 3:Sn; ITO) nanoparticle films by the application of polymers as matrix…”
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Conductance Enhancement Mechanisms of Printable Nanoparticulate Indium Tin Oxide (ITO) Layers for Application in Organic Electronic Devices by Gross, Michael, Linse, Nicolas, Maksimenko, Ilja, Wellmann, Peter J.

“…We present and discuss several methods to enhance the electrical properties of nanoparticle dispersion derived ITO‐layers. A maximum conductance of 132 Ω−1…”
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Fabrication of Bariumtrisulphide Thin Films as Precursors for Chalcogenide Perovskites by Freund, Tim, Cicconi, Maria Rita, Wellmann, Peter J.

“…Chalcogenide perovskites are a promising and novel class of materials in the fields of solar cells and related subjects. However, the synthesis of thin films…”
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Influence of the growth conditions on the formation of macro-steps on the growth interface of SiC-Crystals by Arzig, Matthias, Künecke, Ulrike, Salamon, Michael, Uhlmann, Norman, Wellmann, Peter J.

“…•Gas phase composition affects step morphology on the surface of SiC crystals.•Step bunching due to doping influences the step flow kinetics on the main…”
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Influence of the growth interface shape on the defect characteristics in the facet region of 4H-SiC single crystals by Arzig, Matthias, Salamon, Michael, Hsiao, Ta Ching, Uhlmann, Norman, Wellmann, Peter J.

“…•Different radial temperature gradients lead to different growth interfaces.•The number of threading edge dislocations was reduced due to large surface…”
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Power Electronic Semiconductor Materials for Automotive and Energy Saving Applications - SiC, GaN, Ga 2 O 3 , and Diamond by Wellmann, Peter J

“…Power electronics belongs to the future key technologies in order to increase system efficiency as well as performance in automotive and energy saving…”
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Influence of Morphological Changes in a Source Material on the Growth Interface of 4h-Sic Single Crystals by Arzig, Matthias, Steiner, Johannes, Salamon, Michael, Uhlmann, Norman, Wellmann, Peter J

“…In this study, the change of mass distribution in a source material is tracked using an in situ computer tomography (CT) setup during the bulk growth of 4H-…”
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Intentional Incorporation and Tailoring of Point Defects during Sublimation Growth of Cubic Silicon Carbide by Variation of Process Parameters by Schöler, Michael, Lederer, Maximilian W., Schuh, Philipp, Wellmann, Peter J.

“…Cubic silicon carbide (3C‐SiC) is an emerging material with promising properties for various applications in power electronics, energy saving, and quantum…”
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Comparison of Achievable Contrast Features in Computed Tomography Observing the Growth of a 4H-SiC Bulk Crystal by Salamon, Michael, Arzig, Matthias, Wellmann, Peter J, Uhlmann, Norman

“…Today the physical vapor transport process is regularly applied for the growth of bulk SiC crystals. Due to the required high temperature of up to 2400 °C, and…”
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Numerical reactive diffusion modeling of stacked elemental layer rapid thermal annealed chalcopyrite absorber layer formation by Zweschke, André, Wellmann, Peter J.

“…The diffusion processes during chalcopyrite (CuInSe2) layer formation by rapid thermal annealing (RTA) of stacked elemental layers are still not completely…”
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Application of optical absorbance for the investigation of electronic and structural properties of sol-gel processed TiO2 films by WELTE, Andrea, WALDAUF, Christoph, BRABEC, Christoph, WELLMANN, Peter J

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Annealing-Induced Changes in the Nature of Point Defects in Sublimation-Grown Cubic Silicon Carbide by Schöler, Michael, Brecht, Clemens, Wellmann, Peter J

“…In recent years, cubic silicon carbide (3C-SiC) has gained increasing interest as semiconductor material for energy saving and optoelectronic applications,…”
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