Search Results - "WEIZER, V. G"

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    Minority-carrier mobility anomalies in low-resistivity silicon solar cells by Weizer, V. G., Delombard, R.

    Published in Applied physics letters (28-07-1986)
    “…Measurement of the minority-carrier mobility in the base region of a high-voltage metal-insulator-N-P solar cell (Green et al., 1984), as well as in other…”
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    Journal Article
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    Applicability of the Meyer-Neldel rule to solar cells by Goradia, C., Weizer, V. G.

    Published in Applied physics letters (15-12-1984)
    “…A comparison of data taken on high quality silicon, GaAs, and GaInAs solar cells with those taken on a variety of homojunction, heterojunction, and…”
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    Journal Article
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    Voltage-controlling mechanisms in low-resistivity silicon solar cells-A unified approach by Weizer, V.G., Swartz, C.K., Hart, R.E., Godlewski, M.P.

    Published in IEEE transactions on electron devices (01-01-1986)
    “…An experimental technique is used to determine the relative values of the base and emitter components of the dark saturation current of six types of…”
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    Journal Article
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    Simple, extremely low resistance contact system to n-InP that does not exhibit metal-semiconductor intermixing during sintering by Weizer, Victor G., Fatemi, Navid S.

    Published in Applied physics letters (24-05-1993)
    “…Contact formation to InP is plagued by the violent metal-semiconductor intermixing that takes place during the contact sintering process. We have discovered a…”
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    Journal Article
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    Non-destructive, ultra-low resistance, thermally stable contacts for use on shallow junction InP solar cells by Weizer, V G, Fatemi, N S, Korenyi-Both, A L

    “…We report here on a truly unique contact system, involving Au and Ge, which is easily fabricated, which exhibits extremely low values of contact resistivity,…”
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    Journal Article
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    Humidity-induced room-temperature decomposition of Au contacted indium phosphide by Fatemi, Navid S., Weizer, Victor G.

    Published in Applied physics letters (30-07-1990)
    “…It has been found that Au-contacted InP is chemically unstable at room temperature in a humid ambient due to the leaching action of indium nitrate islands that…”
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    Journal Article
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    Metal-silicon reaction rates - The effects of capping by Weizer, Victor G., Fatemi, Navid S.

    Published in Journal of electronic materials (01-01-1989)
    “…Evidence is presented showing that the presence of the commonly used anti-reflection coating material Ta2O5 on the free surface of contact metallization can…”
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    Journal Article
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    Sinterless contacts to shallow junction InP solar cells by Weizer, V.G., Fatemi, N.S., Korenyi-Both, A.L.

    “…The authors describe two contact systems that provide low contact resistance to InP solar cells that do not require subjecting the current-carrying…”
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    Conference Proceeding
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    Core level x‐ray photoelectron spectroscopy of Au x Ga y alloys by Jayne, D. T., Fatemi, N. S., Weizer, V. G.

    “…Five Au–Ga alloys have been studied using x‐ray photoelectron spectroscopy as part of the program to determine alloy effects on core level binding energies and…”
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    Conference Proceeding Journal Article
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    Progress in the development of metamorphic multi-junction III-V space solar cells by Sinharoy, Samar, Patton, Martin O., Valko Sr, Thomas M., Weizer, Victor G.

    Published in Progress in photovoltaics (01-09-2002)
    “…Theoretical calculations have shown that highest‐efficiency III–V multi‐junction solar cells require alloy structures that cannot be grown on a lattice‐matched…”
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    Journal Article Conference Proceeding
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    An X-Ray Photoelectron Spectroscopy Study of Au sub x In sub y Alloys by Jayne, D T, Fatemi, N S, Weizer, V G

    “…Four Au--In alloys have been studied by X-ray photoelectron spectroscopy. The binding energies and intensity ratios of the Au 4f sub 7/2 and In 3d sub 5/2 core…”
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    Journal Article
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    Development of a very high efficiency, dot-junction, InGaAs thermophotovoltaic (TPV) converter for deep space missions by Sinharoy, S., Weizer, V.G., Wakchaure, Y., Ning Su, Fay, P., Scheiman, D.

    “…Simplified modeling calculations have shown that for a bandgap of 0.6 eV, assuming a conservative 20% planar device conversion efficiency (1800 /spl deg/F…”
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    Conference Proceeding
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    1.62 eV/1.1 eV InGaP/InGaAs dual-junction solar cell development on lattice-mismatched GaAs by Sinharoy, S., Smith, M.A., Weizer, V.G., Pal, A.M., Khan, O., Scheiman, D.A., Jenkins, P.P.

    “…The authors report progress towards achieving a high efficiency monolithic dual-junction solar cell consisting of a 1.62 eV InGaP top cell and a 1.1 eV InGaAs…”
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    Conference Proceeding