Search Results - "WEBB, J. B"

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  1. 1

    Fecal microbiota transplantation for recurrent Clostridium difficile infection in hematopoietic stem cell transplant recipients by Webb, B.J., Brunner, A., Ford, C.D., Gazdik, M.A., Petersen, F.B., Hoda, D.

    Published in Transplant infectious disease (01-08-2016)
    “…Recurrent Clostridium difficile infection (CDI) is a consequence of intestinal dysbiosis and is particularly common following hematopoietic stem cell…”
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    Journal Article
  2. 2

    Properties of carbon-doped GaN by Tang, H., Webb, J. B., Bardwell, J. A., Raymond, S., Salzman, Joseph, Uzan-Saguy, C.

    Published in Applied physics letters (05-02-2001)
    “…The properties of carbon-doped GaN epilayers grown by molecular-beam epitaxy have been studied by temperature-dependent resistivity, Hall-effect measurements,…”
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    Journal Article
  3. 3

    Evaluation of sampling tools for environmental sampling of bacterial endospores from porous and nonporous surfaces by Valentine, N.B, Butcher, M.G, Su, Y.-F, Jarman, K.H, Matzke, M, Webb-Robertson, B.-J, Panisko, E.A, Seiders, B.A.B, Wahl, K.L

    Published in Journal of applied microbiology (01-10-2008)
    “…Having and executing a well-defined and validated sampling protocol is critical following a purposeful release of a biological agent for response and recovery…”
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    Journal Article
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    The clinical impact of vancomycin-resistant Enterococcus colonization and bloodstream infection in patients undergoing autologous transplantation by Ford, C.D., Lopansri, B.K., Gazdik, M.A., Snow, G.L., Webb, B.J., Konopa, K.L., Petersen, F.B.

    Published in Transplant infectious disease (01-10-2015)
    “…Background Although several studies have documented adverse outcomes for vancomycin‐resistant Enterococcus (VRE) colonization and infection in allogeneic…”
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    Journal Article
  6. 6

    Semi-insulating C-doped GaN and high-mobility AlGaN/GaN heterostructures grown by ammonia molecular beam epitaxy by Webb, J. B., Tang, H., Rolfe, S., Bardwell, J. A.

    Published in Applied physics letters (16-08-1999)
    “…A method of growing semi-insulating GaN epilayers by ammonia molecular beam epitaxy through intentional doping with carbon is reported. Thick GaN layers of…”
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    Journal Article
  7. 7

    The effect of local anaesthetic cream (EMLA ®) applied with an occlusive dressing on skin thickness. Does it matter? by Tahir, A., Webb, J.B., Allen, G., Nancarrow, J.D.

    “…EMLA ® cream is used in plastic surgery as a topical anaesthetic to harvest split skin grafts. It has been observed that the skin appears pale and oedematous…”
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    Journal Article
  8. 8

    Hepatic Cytochrome P450 Activity, Abundance, and Expression Throughout Human Development by Sadler, Natalie C, Nandhikonda, Premchendar, Webb-Robertson, Bobbie-Jo, Ansong, Charles, Anderson, Lindsey N, Smith, Jordan N, Corley, Richard A, Wright, Aaron T

    Published in Drug metabolism and disposition (01-07-2016)
    “…Cytochrome P450s are oxidative metabolic enzymes that play critical roles in the biotransformation of endogenous compounds and xenobiotics. The expression and…”
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    Journal Article
  9. 9

    AlGaN/GaN field effect transistors with C-doped GaN buffer layer as an electrical isolation template grown by molecular beam epitaxy by Haffouz, S., Tang, H., Bardwell, J.A., Hsu, E.M., Webb, J.B., Rolfe, S.

    Published in Solid-state electronics (01-05-2005)
    “…The effectiveness of Ammonia Molecular Beam Epitaxy (MBE) grown carbon-doped GaN buffer layer as an electrical isolation template was investigated. AlGaN/GaN…”
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    Journal Article
  10. 10

    Microstructural analysis of Ti/Al/Ti/Au ohmic contacts to n-AlGaN/GaN by Chen, J., Ivey, D. G., Bardwell, J., Liu, Y., Tang, H., Webb, J. B.

    “…To develop high quality AlGaN/GaN heterostructure field effect transistors for use in high power, high frequency, and high temperature applications, low…”
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    Conference Proceeding Journal Article
  11. 11

    An accuracy assessment of forest disturbance mapping in the western Great Lakes by Zimmerman, P.L., Housman, I.W., Perry, C.H., Chastain, R.A., Webb, J.B., Finco, M.V.

    Published in Remote sensing of environment (01-01-2013)
    “…The increasing availability of satellite imagery has spurred the production of thematic land cover maps based on satellite data. These maps are more valuable…”
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    A simple wet etch for GaN by BARDWELL, J. A, FOULDS, I. G, WEBB, J. B, TANG, H, FRASER, J, MOISA, S, ROLFE, S. J

    Published in Journal of electronic materials (01-10-1999)
    “…A simple UV photo-enhanced wet etch has been developed for GaN. Unlike photoelectrochemical wet etching, this technique does not require an electrical contact…”
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    Journal Article
  14. 14

    Concurrent Pulmonary Aspergillus fumigatus and Mucor Infection in a Cardiac Transplant Recipient: A Case Report by Webb, B.J, Blair, J.E, Kusne, S, Scott, R.L, Steidley, D.E, Arabia, F.A, Vikram, H.R

    Published in Transplantation proceedings (01-03-2013)
    “…Abstract Invasive fungal infections are a significant complication of solid organ transplantation. Here we report the first case of concurrent invasive…”
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  15. 15

    Smooth wet etching by ultraviolet-assisted photoetching and its application to the fabrication of AlGaN/GaN heterostructure field-effect transistors by Maher, H., DiSanto, D. W., Soerensen, G., Bolognesi, C. R., Tang, H., Webb, J. B.

    Published in Applied physics letters (04-12-2000)
    “…We characterize a KOH-based ultraviolet (UV) photoassisted wet etching technique using K2S2O8 as the oxidizing agent. The solution provides a well-controlled…”
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    Journal Article
  16. 16

    Nitride-based HFETs with carrier confinement layers by Su, Y.K, Chang, S.J, Kuan, T.M, Ko, C.H, Webb, J.B, Lan, W.H, Cherng, Y.T, Chen, S.C

    “…Nitride-based Al 0.24Ga 0.76N/GaN heterostructure field effect transistors (HFETs) with carrier confinement layers were successfully fabricated. It was found…”
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    Journal Article
  17. 17

    Structure characterization of AlN buffer layers grown on (0 0 0 1) sapphire by magnetron sputter epitaxy by Tang, H, Webb, J.B, Moisa, S, Bardwell, J.A, Rolfe, S

    Published in Journal of crystal growth (01-09-2002)
    “…AlN layers grown by magnetron sputter epitaxy (MSE) are effective buffer layers for the growth of high quality GaN materials and devices. The structural and…”
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    Journal Article
  18. 18

    Fabrication of high performance GaN modulation doped field effect transistors by Bardwell, J. A., Foulds, I., Lamontagne, B., Tang, H., Webb, J. B., Marshall, P., Rolfe, S. J., Stapledon, J., MacElwee, T. W.

    “…Fabrication of GaN devices presents a number of processing issues. Since the AlGaN/GaN material and sapphire substrates are transparent in the ultraviolet,…”
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    Conference Proceeding Journal Article
  19. 19

    Growth of high-performance GaN modulation-doped field-effect transistors by ammonia-molecular-beam epitaxy by Tang, H., Webb, J. B., Bardwell, J. A., MacElwee, T.

    “…The growth of AlGaN/GaN modulation-doped field-effect transistors (MODFETs) by ammonia-molecular-beam epitaxy on sapphire substrates is reported. C-doped GaN…”
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    Conference Proceeding Journal Article
  20. 20

    Flame burns: a forgotten danger of diathermy? by Webb, J.B., Balaratnam, S., Park, A.J.

    Published in The surgeon (Edinburgh) (01-04-2003)
    “…Diathermy and spirit-based skin preparations are both used on a daily basis in most hospital theatres. We report a case illustrating the potential hazards of…”
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    Journal Article