Search Results - "WALDRON, N"

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    Senescence, Necrosis, and Apoptosis Govern Circulating Cell-free DNA Release Kinetics by Rostami, Ariana, Lambie, Meghan, Yu, Caberry W., Stambolic, Vuk, Waldron, John N., Bratman, Scott V.

    Published in Cell reports (Cambridge) (30-06-2020)
    “…The kinetics of circulating cell-free DNA (cfDNA) release may provide a real-time assessment of induced cell death. However, there is a limited understanding…”
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    Journal Article
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    Impact of pregabalin on acute and persistent postoperative pain: a systematic review and meta-analysis by Mishriky, B.M., Waldron, N.H., Habib, A.S.

    Published in British journal of anaesthesia : BJA (01-01-2015)
    “…We performed this systematic review to assess the analgesic efficacy of perioperative pregabalin. Subgroup analyses and meta-regression were performed to…”
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    Impact of perioperative dexamethasone on postoperative analgesia and side-effects: systematic review and meta-analysis by Waldron, N.H., Jones, C.A., Gan, T.J., Allen, T.K., Habib, A.S.

    Published in British journal of anaesthesia : BJA (01-02-2013)
    “…The analgesic efficacy and adverse effects of a single perioperative dose of dexamethasone are unclear. We performed a systematic review to evaluate the impact…”
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    Plasma redox imbalance caused by albumin oxidation promotes lung-predominant NETosis and pulmonary cancer metastasis by Inoue, Minoru, Nakashima, Ryota, Enomoto, Masahiro, Koike, Yuhki, Zhao, Xiao, Yip, Kenneth, Huang, Shao Hui, Waldron, John N., Ikura, Mitsuhiko, Liu, Fei-Fei, Bratman, Scott V.

    Published in Nature communications (30-11-2018)
    “…Neutrophil extracellular traps (NETs) promote cancer metastasis in preclinical models following massive exogenous inflammatory stimuli. It remains unknown…”
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    Low-Frequency Noise Investigation of GaN/AlGaN Metal-Oxide-Semiconductor High-Electron-Mobility Field-Effect Transistor With Different Gate Length and Orientation by Takakura, K., Putcha, V., Simoen, E., Alian, A. R., Peralagu, U., Waldron, N., Parvais, B., Collaert, N.

    Published in IEEE transactions on electron devices (01-08-2020)
    “…In this article, GaN/AlGaN metal-oxide- semiconductor high-electron-mobility field-effect transistors (MOSHEMTs) fabricated on high-resistivity Si (111)…”
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    Analysis of Gate-Metal Resistance in CMOS-Compatible RF GaN HEMTs by ElKashlan, R. Y., Rodriguez, R., Yadav, S., Khaled, A., Peralagu, U., Alian, A., Waldron, N., Zhao, M., Wambacq, P., Parvais, B., Collaert, N.

    Published in IEEE transactions on electron devices (01-11-2020)
    “…To enable CMOS-compatible GaN HEMTs for the next generation of communication systems (5G and beyond), a low gate resistance is of great importance since it…”
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    Selective metal-organic chemical vapor deposition growth of high quality GaAs on Si(001) by Guo, W., Date, L., Pena, V., Bao, X., Merckling, C., Waldron, N., Collaert, N., Caymax, M., Sanchez, E., Vancoille, E., Barla, K., Thean, A., Eyben, P., Vandervorst, W.

    Published in Applied physics letters (11-08-2014)
    “…High quality GaAs is selectively grown in 40 nm width Shallow Trench Isolation patterned structures. The patterned wafers have a V-shape Si (111) surface…”
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