Search Results - "WALCZYK, Damian"

Engineering of the Chemical Reactivity of the Ti/HfO2 Interface for RRAM: Experiment and Theory by Calka, Pauline, Sowinska, Malgorzata, Bertaud, Thomas, Walczyk, Damian, Dabrowski, Jarek, Zaumseil, Peter, Walczyk, Christian, Gloskovskii, Andrei, Cartoixà, Xavier, Suñé, Jordi, Schroeder, Thomas

“…The Ti/HfO2 interface plays a major role for resistance switching performances. However, clear interface engineering strategies to achieve reliable and…”
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Impact of Temperature on the Resistive Switching Behavior of Embedded \hbox-Based RRAM Devices by Walczyk, C., Walczyk, D., Schroeder, T., Bertaud, T., Sowinska, M., Lukosius, M., Fraschke, M., Wolansky, D., Tillack, B., Miranda, E., Wenger, C.

“…Back-end-of-line integrated 1 × μm 2 TiN/HfO 2 /Ti/TiN MIM memory devices in a 0.25- μm complementary metal-oxide-semiconductor technology were built to…”
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Impact of Temperature on the Resistive Switching Behavior of Embedded HfO2-Based RRAM Devices by WALCZYK, Christian, WALCZYK, Damian, WENGER, Christian, SCHROEDER, Thomas, BERTAUD, Thomas, SOWINSKA, Malgorzata, LUKOSIUS, Mindaugas, FRASCHKE, Mirko, WOLANSKY, Dirk, TILLACK, Bernd, MIRANDA, Enrique

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Oxygen Vacancy Induced Room Temperature Ferromagnetism in Pr-Doped CeO2 Thin Films on Silicon by Niu, Gang, Hildebrandt, Erwin, Schubert, Markus Andreas, Boscherini, Federico, Zoellner, Marvin Hartwig, Alff, Lambert, Walczyk, Damian, Zaumseil, Peter, Costina, Ioan, Wilkens, Henrik, Schroeder, Thomas

“…Integration of functional oxides on Si substrates could open a pathway to integrate diverse devices on Si-based technology. Oxygen vacancies (Vo··) can…”
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Impact of Intercell and Intracell Variability on Forming and Switching Parameters in RRAM Arrays by Grossi, Alessandro, Walczyk, Damian, Zambelli, Cristian, Miranda, Enrique, Olivo, Piero, Stikanov, Valeriy, Feriani, Alessandro, Sune, Jordi, Schoof, Gunter, Kraemer, Rolf, Tillack, Bernd, Fox, Alexander, Schroeder, Thomas, Wenger, Christian, Walczyk, Christian

“…The intercell variability of the initial state and the impact of dc and pulse forming on intercell variability as well as on intracell variability in TiN/HfO 2…”
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In-operando and non-destructive analysis of the resistive switching in the Ti/HfO 2 /TiN-based system by hard x-ray photoelectron spectroscopy by Bertaud, Thomas, Sowinska, Malgorzata, Walczyk, Damian, Thiess, Sebastian, Gloskovskii, Andrei, Walczyk, Christian, Schroeder, Thomas

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Oxygen Vacancy Induced Room Temperature Ferromagnetism in Pr-Doped CeO 2 Thin Films on Silicon by Niu, Gang, Hildebrandt, Erwin, Schubert, Markus Andreas, Boscherini, Federico, Zoellner, Marvin Hartwig, Alff, Lambert, Walczyk, Damian, Zaumseil, Peter, Costina, Ioan, Wilkens, Henrik, Schroeder, Thomas

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Statistical analysis of resistive switching characteristics in ReRAM test arrays by Zambelli, Cristian, Grossi, Alessandro, Olivo, Piero, Walczyk, Damian, Bertaud, Thomas, Tillack, Bernd, Schroeder, Thomas, Stikanov, Valeriy, Walczyk, Christian

“…The design and the manufacturing of ReRAM test structures allow deeper insight in the performance of the FORMING, RESET, and SET operations at array level,…”
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Engineering of the Chemical Reactivity of the Ti/HfO 2 Interface for RRAM: Experiment and Theory by Calka, Pauline, Sowinska, Malgorzata, Bertaud, Thomas, Walczyk, Damian, Dabrowski, Jarek, Zaumseil, Peter, Walczyk, Christian, Gloskovskii, Andrei, Cartoixà, Xavier, Suñé, Jordi, Schroeder, Thomas

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Impact of Temperature on the Resistive Switching Behavior of Embedded [Formula Omitted]-Based RRAM Devices by Walczyk, Christian, Walczyk, Damian, Schroeder, Thomas, Bertaud, Thomas, Sowinska, Malgorzata, Lukosius, Mindaugas, Fraschke, Mirko, Wolansky, Dirk, Tillack, Bernd, Miranda, Enrique, Wenger, Christian

“…Back-end-of-line integrated [Formula Omitted] MIM memory devices in a 0.25-[Formula Omitted] complementary metal-oxide-semiconductor technology were built to…”
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Impact of Temperature on the Resistive Switching Behavior of Embedded hbox HfO 2 -Based RRAM Devices by Walczyk, Christian, Walczyk, Damian, Schroeder, Thomas, Bertaud, Thomas, Sowinska, Malgorzata, Lukosius, Mindaugas, Fraschke, Mirko, Wolansky, Dirk, Tillack, Bernd, Miranda, Enrique, Wenger, Christian

“…Back-end-of-line integrated hbox 1 hbox 1 Unknown character mu hbox m 2 Unknown character hbox TiN / HfO 2 / break hbox Ti / TiN MIM memory devices in a 0.25-…”
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Electrical characterization of read window in reram arrays under different SET/RESET cycling conditions by Zambelli, Cristian, Grossi, Alessandro, Olivo, Piero, Walczyk, Damian, Dabrowski, Jarek, Tillack, Bernd, Schroeder, Thomas, Kraemer, Rolf, Stikanov, Valeriy, Walczyk, Christian

“…In this work a SET/RESET investigation in cycling on ReRAM arrays has been performed, in order to find the most reliable SET/RESET operation conditions. The…”
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