Search Results - "Würzner, S."
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The effect of the growth rate on the microstructure of multi-crystalline silicon
Published in Journal of crystal growth (15-11-2012)“…This paper presents an experimental study of the influence of the growth rate on the microstructure of multi-crystalline silicon (mc-Si). Crystals with a…”
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Improving solar grade silicon by controlling extended defect generation and foreign atom defect interactions
Published in Applied physics. A, Materials science & processing (01-07-2009)“…Multicrystalline silicon has a high commercial potential for solar cell applications. Extended lattice defects, such as dislocations and grain boundaries, are…”
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Novel combination of orientation measurements and transmission microscopy for experimental determination of grain boundary miller indices in silicon and other semiconductors
Published in Journal of microscopy (Oxford) (01-04-2012)“…Summary The determination of grain boundary planes in multicrystalline material has only been restricted to transmission electron microscope investigations…”
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The correlation between spatial alignment of dislocations, grain orientation, and grain boundaries in multicrystalline silicon
Published in Crystal research and technology (1979) (01-03-2012)“…An experimental study of the correlation between dislocations, grain orientation, and grain boundaries in multicrystalline silicon (mc‐Si) bulk crystals is…”
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