Search Results - "Würzner, S."

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  1. 1

    The effect of the growth rate on the microstructure of multi-crystalline silicon by Schmid, E., Würzner, S., Funke, C., Galindo, V., Pätzold, O., Stelter, M.

    Published in Journal of crystal growth (15-11-2012)
    “…This paper presents an experimental study of the influence of the growth rate on the microstructure of multi-crystalline silicon (mc-Si). Crystals with a…”
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    Journal Article
  2. 2

    Improving solar grade silicon by controlling extended defect generation and foreign atom defect interactions by Möller, H. J., Kaden, T., Scholz, S., Würzner, S.

    “…Multicrystalline silicon has a high commercial potential for solar cell applications. Extended lattice defects, such as dislocations and grain boundaries, are…”
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    Journal Article
  3. 3

    Novel combination of orientation measurements and transmission microscopy for experimental determination of grain boundary miller indices in silicon and other semiconductors by FUNKE, C., BEHM, T., HELBIG, R., SCHMID, E., WÜRZNER, S.

    Published in Journal of microscopy (Oxford) (01-04-2012)
    “…Summary The determination of grain boundary planes in multicrystalline material has only been restricted to transmission electron microscope investigations…”
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  4. 4

    The correlation between spatial alignment of dislocations, grain orientation, and grain boundaries in multicrystalline silicon by Schmid, E., Würzner, S., Funke, C., Behm, Th, Helbig, R., Pätzold, O., Berek, H., Stelter, M.

    Published in Crystal research and technology (1979) (01-03-2012)
    “…An experimental study of the correlation between dislocations, grain orientation, and grain boundaries in multicrystalline silicon (mc‐Si) bulk crystals is…”
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    Journal Article
  5. 5