Search Results - "Vyvoda, M. A."

Vertical p-i-n polysilicon diode with antifuse for stackable field-programmable ROM by Herner, S.B., Bandyopadhyay, A., Dunton, S.V., Eckert, V., Gu, J., Hsia, K.J., Hu, S., Jahn, C., Kidwell, D., Konevecki, M., Mahajani, M., Park, K., Petti, C., Radigan, S.R., Raghuram, U., Vienna, J., Vyvoda, M.A.

“…A field-programmable, stackable memory cell using 0.15-μm technology is demonstrated. Vertical polycrystalline silicon diodes are stacked on top of one…”
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Sheath structure of an electronegative plasma with cold positive ions by Ming Li, Vyvoda, M.A., Dew, S.K., Brett, M.J.

“…The one-dimensional collisionless sheath model of electropositive plasmas is extended here to study the sheath structure of an electronegative plasma at steady…”
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Effects of plasma conditions on the shapes of features etched in Cl2 and HBr plasmas. I. Bulk crystalline silicon etching by Vyvoda, M. A., Lee, H., Malyshev, M. V., Klemens, F. P., Cerullo, M., Donnelly, V. M., Graves, D. B., Kornblit, A., Lee, J. T. C.

“…We have studied the effects of source and bias powers, pressure, and feed gas composition on the shapes of SiO2-masked crystalline silicon features etched in a…”
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Low resistivity TiSi2 on narrow p+ polycrystalline silicon lines by Herner, S. B., Vyvoda, M. A.

“…We have achieved low resistivity TiSi2 on 0.25 μm wide polysilicon lines doped to 5×1020/cm3 with boron by use of in situ doping of polysilicon. By controlling…”
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Effects of plasma conditions on the shapes of features etched in Cl 2 and HBr plasmas. I. Bulk crystalline silicon etching by Vyvoda, M. A., Lee, H., Malyshev, M. V., Klemens, F. P., Cerullo, M., Donnelly, V. M., Graves, D. B., Kornblit, A., Lee, J. T. C.

“…We have studied the effects of source and bias powers, pressure, and feed gas composition on the shapes of SiO 2 -masked crystalline silicon features etched in…”
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Hardmask charging during Cl 2 plasma etching of silicon by Vyvoda, M. A., Li, M., Graves, D. B.

“…Feature profile evolution simulations of plasma etching rely to first order on the accurate prediction of ion fluxes to all points on the evolving surface…”
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Feature evolution simulations of copper seed layer deposition using atomic-level particle scattering information by Vyvoda, M.A., Abrams, C.F., Grave, D.B.

“…One of the most important processing steps during copper metallization is the deposition of a thin yet conformal copper seed layer, often using ionized…”
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Hardmask charging during Cl2 plasma etching of silicon by Vyvoda, M. A., Li, M., Graves, D. B.

“…Feature profile evolution simulations of plasma etching rely to first order on the accurate prediction of ion fluxes to all points on the evolving surface…”
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Role of sidewall scattering in feature profile evolution during Cl 2 and HBr plasma etching of silicon by Vyvoda, M. A., Li, M., Graves, D. B., Lee, H., Malyshev, M. V., Klemens, F. P., Lee, J. T. C., Donnelly, V. M.

“…Coupling reactor-scale models of plasma etching equipment to device-scale models of feature profile evolution offers the potential for increased levels of…”
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Three-dimensional thin-film-transistor silicon-oxide-nitride-oxide-silicon memory cell formed on large grain sized polysilicon films using nuclei induced solid phase crystallization by Gu, S., Dunton, S. V., Walker, A. J., Nallamothu, S., Chen, E. H., Mahajani, M., Herner, S. B., Eckert, V. L., Hu, S., Konevecki, M., Petti, C., Radigan, S., Raghuram, U., Vyvoda, M. A.

“…We describe a manufacturing method (US Patent No. 6,713,371) to enhance the grain size of polysilicon films prepared by solid phase crystallization of…”
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Feature evolution simulations of copper seed layer deposition using atomic-level particle scattering information : Special issue on the modeling of collisional or near-collisionless low-temperature plasmas by VYVODA, M. A, ABRAMS, C. F, GRAVE, D. B

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Three-dimensional thin-film-transistor silicon-oxide-nitride-oxide-silicon memory cell formed on large grain sized polysilicon films using nucleiinduced solid phase crystallization by Gu, S., Dunton, S. V., Walker, A. J., Nallamothu, S., Chen, E. H., Mahajani, M., Herner, S. B., Eckert, V. L., Hu, S., Konevecki, M., Petti, C., Radigan, S., Raghuram, U., Vyvoda, M. A.

“…We describe a manufacturing method (US Patent No. 6,713,371) to enhance the grain size of polysilicon films prepared by solid phase crystallization of…”
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Role of sidewall scattering in feature profile evolution during Cl sub(2) and HBr plasma etching of silicon by Vyvoda, MA, Li, M, Graves, D B, Lee, H, Malyshev, M V, Klemens, F P, Lee, JTC, Donnelly, V M

“…A numerical simulation consisting of two-dimensional axisymmetric fluid plasma simulation is presented for the prediction of the fluxes and energies of…”
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