Search Results - "Vydyanath, H. R."
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Comparison of trimethylgallium and triethylgallium for the growth of GaN
Published in Applied physics letters (01-12-1997)“…GaN films grown by low-pressure metalorganic chemical vapor deposition using trimethylgallium and triethylgallium as gallium precursors are compared. The films…”
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Status of Te-rich and Hg-rich liquid phase epitaxial technologies for the growth of (Hg,Cd)Te alloys
Published in Journal of electronic materials (01-09-1995)Get full text
Conference Proceeding Journal Article -
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Mode of arsenic incorporation in HgCdTe grown by MBE
Published in Journal of electronic materials (01-06-1997)Get full text
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Thermomigration of Te precipitates and improvement of (Cd,Zn)Te substrate characteristics for the fabrication of LWIR (Hg,Cd)Te photodiodes
Published in Journal of electronic materials (01-08-1993)“…Examination of the (Cd, Zn)Te wafers with ir microscopy before and after annealing (below and above Te mp) indicates a reduction of Te precipitates in wafers…”
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5
Vapor phase equilibria in the Cd1-xZnxTe alloy system
Published in Journal of electronic materials (01-08-1993)Get full text
Conference Proceeding Journal Article -
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Annealing experiments in heavily arsenic-doped (Hg,Cd)Te
Published in Journal of electronic materials (01-05-1995)Get full text
Conference Proceeding Journal Article -
7
Incorporation of dopants and native defects in bulk Hg1-xCdxTe crystals and epitaxial layers
Published in Journal of crystal growth (01-04-1996)Get full text
Conference Proceeding Journal Article -
8
Recipe to minimize Te precipitation in CdTe and (Cd,Zn)Te crystals
Published in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures (01-07-1992)“…Using a quasichemical approach, the total native defect concentration and the minimum deviation in stoichiometry have been calculated in CdTe crystals as a…”
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Observation of prevalence of quasi-equilibrium in the MBE growth of Hg1−xCdxTe
Published in Journal of electronic materials (01-06-1998)Get full text
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Analysis of the variation in the composition as a function of growth parameters in the MBE growth of indium doped Hg1−xCdxTe
Published in Journal of electronic materials (01-06-1998)Get full text
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Doping behavior of iodine in Hg0.8Cd0.2Te
Published in Journal of electronic materials (01-01-1982)Get full text
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Mechanisms of incorporation of donor and acceptor dopants in (Hg,Cd)Te alloys
Published in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures (01-05-1991)“…The usefulness of the quasichemical approach in predicting the defect structure of undoped and doped (Hg,Cd)Te crystals is emphasized. To begin with, the…”
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Analysis of the variation in the composition as a function of growth parameters in the MBE growth of indium doped (Hg 1-x Cd x Te)
Published in Journal of electronic materials (01-06-1998)Get full text
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15
Observation of prevalence of quasi-equilibrium in the MBE growth of (Hg 1-x Cd x Te)
Published in Journal of electronic materials (01-06-1998)Get full text
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Correlation of HgCdTe epilayer defects with underlying substrate defects by synchrotron x‐ray topography
Published in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures (01-05-1991)“…Synchrotron x‐ray topography studies have been conducted at the National Synchrotron Light Source at Brookhaven National Laboratory to correlate defects in…”
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Annealing Studies of Undoped Hg^sub 1-x^Mn^sub x^Te Bulk Crystals at High Temperatures
Published in Journal of electronic materials (01-08-1996)“…The effect of high temperature annealing treatments in varying mercury atmospheres on Hg^sub 1-x^Mn^sub x^Te crystals with long wavelength infrared/very long…”
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Annealing Studies of Undoped Hgsub 1-xMnsub x exp e Bulk Crystals at High Temperatures
Published in Journal of electronic materials (01-08-1996)“…The effect of high temperature annealing treatments in varying mercury atmospheres on Hgsub 1-xMnsub x exp e crystals with long wavelength infrared/very long…”
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Annealing studies of undoped Hg1−xMnx Te bulk crystals at high temperatures
Published in Journal of electronic materials (01-08-1996)Get full text
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Vapor phase equilibria in the Cd sub 1 sub - sub x Zn sub x Te alloy system
Published in Journal of electronic materials (01-01-1993)“…Title compounds of different compositions were prepared at 400-1000 degrees C by annealing elemental Te in sealed quartz ampoules in an atm of Cd and Zn…”
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