Search Results - "Vyatkin, A.F."

Preparation of hydrogen for feeding fuel cells by low-temperature conversion of ethanol on Ni/ZnO and Ni-Cu/ZnO catalysts by Lapin, N. V., Bezhok, V. S., Vyatkin, A. F.

“…Preparation of hydrogen by low-temperature steam conversion of ethanol on nickel and binary nickel-copper catalysts supported on zinc oxide was studied…”
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Study of silicon strip waveguides with diffraction gratings and photonic crystals tuned to a wavelength of 1.5 µm by Barabanenkov, M. Yu, Vyatkin, A. F., Volkov, V. T., Gruzintsev, A. N., Il’in, A. I., Trofimov, O. V.

“…Single-mode submicrometer-thick strip waveguides on silicon-on-insulator substrates, fabricated by silicon-planar-technology methods are considered. To solve…”
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The role of point defects in strain relaxation in epitaxially grown SiGe structures by Vyatkin, A.F.

“…Strain relaxation commonly occurring in SiGe heteroepitaxial systems by misfit dislocations is a very important process affecting the properties of electronic…”
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High-dose V+ implantation in ZnO thin film structures by Vyatkin, A.F., Zinenko, V.I., Agaphonov, Yu.A., Pustovit, A.N., Roshchupkin, D.V., Reuss, F., Kirchner, C., Kling, R., Waag, A.

“…In the last two decades, diluted magnetic semiconductors have attracted great attention as promising materials for spintronics applications. [K. Sato, H…”
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Low-temperature strain relaxation in SiGe/Si heterostructures implanted with Ge + ions by Avrutin, V.S., Izyumskaya, N.F., Vyatkin, A.F., Zinenko, V.I., Agafonov, Yu.A., Irzhak, D.V., Roshchupkin, D.V., Steinman, E.A., Vdovin, V.I., Yugova, T.G.

“…Pseudomorphic Si 0.76Ge 0.24/Si heterostructures grown by molecular beam epitaxy were implanted with Ge + ions at 400 °C in such a way that an ion-damaged…”
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Low-temperature strain relaxation in ion-irradiated pseudomorphic SiGe/Si structures by Avrutin, V.S, Izyumskaya, N.F, Vyatkin, A.F, Zinenko, V.I, Agafonov, Yu.A, Irzhak, D.V, Roshchupkin, D.V, Steinman, E.A, Vdovin, V.I, Yugova, T.G

“…The effect of non-equilibrium point defects on strain relaxation in pseudomorphic Si 0.76Ge 0.24/Si heterostructures was studied by X-ray diffraction (XRD) and…”
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Polyenergy ion beam synthesis of buried oxynitride layer in silicon by Barabanenkov, M.Yu, Agafonov, Yu.A., Mordkovich, V.N., Pustovit, A.N., Vyatkin, A.F., Zinenko, V.I.

“…The efficiency of silicon oxynitride synthesis in silicon crystals implanted with substoichiometric doses of oxygen and nitrogen ions is investigated both…”
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Effect of annealing environment on antimony redistribution in pseudomorphic Si/SiGe/Si〈Sb〉 heterostructures by Avrutin, V.S., Barabanenkov, M.Yu, Izyumskaya, N.F., Pustovit, A.N., Vyatkin, A.F., Loiko, N.N.

“…Sb redistribution in an MBE-grown strained Si/Si 0.85Ge 0.15/Si〈Sb〉 heterostructure was studied by secondary ion mass-spectrometry. Two types of annealing…”
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Point defect induced SPE growth of Ni implanted silicon by Vyatkin, A.F., Kuznetsov, A.Yu

“…In the present paper the solid phase epitaxial (SPE) growth and silicidation in Ni-implanted silicon have been studied. The dependences observed have been…”
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Dielectric Porous Layer Formation in Si and Si/Ge by Local Stain Etching by Starkov, V.V., Starostina, E.A., Vyatkin, A.F., Volkov, V.T.

“…Methods of local porous layer formation by stain etching in HF : HNO3 : H2O solution have been proposed to form a dielectric isolation of devices. The…”
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Silicon molecular beam epitaxial growth on ultra-small mesa structures by Avrutin, V.S., Izumskaya, N.F., Vyatkin, A.F., Yunkin, V.A.

“…The effect of temperature and deposition rate on faceting of local silicon epitaxial structures in the temperature range 450–900°C was studied. Epitaxial…”
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Causes of cracking of vacuum deposited thick amorphous silicon film by Avrutin, V.S., Izumskaya, N.F., Hartman, Y.M., Andreeva, A.V., Vyatkin, A.F., Melnik, N.N.

“…Cracking of thick amorphous silicon films deposited in ultra high vacuum on crystalline substrates was investigated. It was found that microvoids occurring in…”
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Ultra-shallow p-n junction formation by ion implantation at high energy? by Vyatkin, A.F., Zinenko, V.I., Pustovit, A.N., Agafonov, Yu.A.

“…Further CMOS device scaling beyond 0.13μm requires very shallow p-n junction formation for the source and drain extensions. Ultra-low energy ion implantation…”
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Local dielectric layers formation in Si and SiGe using focused ion beam implantation by Vyatkin, A.F., Gorbatov, Yu.B., Starkov, V.V., Konig, U., Hersener, Yu

“…25 kev Ga/sup +/ focused ion beam implantation of various structures has been used to provide local dielectric isolation of devices. Stain etching in HF:H/sub…”
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