Search Results - "Vuong, H.H."

Severe thickness variation of sub-3 nm gate oxide due to Si surface faceting, poly-Si intrusion, and corner stress by Liu, C.T., Baumann, F.H., Ghetti, A., Vuong, H.H., Chang, C.P., Cheung, K.P., Colonell, J.I., Lai, W.Y.C., Lloyd, E.J., Miner, J.F., Pai, C.S., Vaidya, H., Liu, R., Clemens, J.T.

“…In the fabrication of CMOS devices with sub-3 nm gate oxides, we have observed severe variation of the oxide thickness (t/sub ox/). For devices with 2.5 nm…”
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Comment on ‘‘Buffer-induced modulation of carrier density and mobility in a selectively doped heterostructure’’ [Appl. Phys. Lett. 61, 2308 (1992)] by Vuong, T. H. H., Reynolds, C. L., Singleton, J.

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Physics-based RF noise modeling of submicron MOSFETs by Donati, S., Alam, M.A., Krisch, K.S., Martin, S., Pinto, M.R., Vuong, H.H., Bonani, F., Ghione, G.

“…The Impedance Field Method (IFM) for physics-based noise modeling of electron devices is applied, for the first time, to evaluate the RF noise performance of…”
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A computationally efficient technique to extract diffused profiles and three dimensional collector resistances of high energy implanted bipolar devices by Chaudhry, S., Chyan, Y.F., Carroll, M.S., Chen, A.S., Nagy, W.J., Lee, J.L., Layman, P.A., Stevie, F.A., Rafferty, C.S., Vuong, H.H.

“…A computationally efficient technique to extract the diffused profiles and collector resistances of bipolar transistors formed via high energy implantation in…”
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High-field transport in an InGaAs-InP superlattice grown by chemical beam epitaxy by VUONG, T. H. H, TSUI, D. C, TSANG, W. T

“…We report the observation of high-field-domain formation in the transport through an In0.53Ga0.47As-InP superlattice. The current-voltage characteristics show…”
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Dependence of the conduction in In0.53Ga0.47As-InP double-barrier tunneling structures on the mesa-etching process by Vuong, T. H. H., Tsui, D. C., Tsang, W. T.

“…Measurements of the current-voltage curves of several In0.53Ga0.47As-InP double-barrier tunneling structures are presented as a function of the etching process…”
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Tunneling in In0.53Ga0.47As-InP double-barrier structures by VUONG, T. H. H, TSUI, D. C, TSANG, W. T

“…We report the first observation of tunneling through In0.53Ga0.47As-InP double-barrier structures at 77 and 4.2 K. The tunneling peaks occur at voltages close…”
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