Issues in HgCdTe Research and Expected Progress in Infrared Detector Fabrication

The purpose of this paper is to review the trends in HgCdTe research, illustrating the discussed ideas with the latest results obtained at DEFIR (CEA-LETI and Sofradir joint laboratory). The beginning of this paper is devoted to an extended introduction to today’s issues concerning HgCdTe photodiode...

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Bibliographic Details
Published in:	Journal of electronic materials Vol. 42; no. 11; pp. 3349 - 3358
Main Authors:	Gravrand, O., Destefanis, G., Bisotto, S., Baier, N., Rothman, J., Mollard, L., Brellier, D., Rubaldo, L., Kerlain, A., Destefanis, V., Vuillermet, M.
Format:	Journal Article Conference Proceeding
Language:	English
Published:	Boston Springer US 01-11-2013 Springer Springer Nature B.V
Subjects:	Applied sciences Arrays Bolometer; infrared, submillimeter wave, microwave and radiowave receivers and detectors Characterization and Evaluation of Materials Chemistry and Materials Science Cross-disciplinary physics: materials science; rheology Electrical engineering Electronics Electronics and Microelectronics Exact sciences and technology Infrared, submillimeter wave, microwave and radiowave instruments, equipment and techniques Instrumentation Instruments, apparatus, components and techniques common to several branches of physics and astronomy Materials research Materials Science Methods of deposition of films and coatings; film growth and epitaxy Optical and Electronic Materials Optoelectronic devices Other semiconductors Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Solid State Physics Specific materials Theory and models of film growth m pitch SWAP dual band APD CdZnTe HgCdTe HOT 10 LPE Diode 10 μm pitch Review High temperature Mid infrared radiation Background noise Imaging Mismatch lattice Avalanche photodiodes Passivation Ultrafast process Focal plane arrays Infrared detector Active layer Photodetector Array II-VI semiconductors Interconnection Growth mechanism
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Summary:	The purpose of this paper is to review the trends in HgCdTe research, illustrating the discussed ideas with the latest results obtained at DEFIR (CEA-LETI and Sofradir joint laboratory). The beginning of this paper is devoted to an extended introduction to today’s issues concerning HgCdTe photodiode performance enhancement. In fact, very high-quality material is mandatory for ultrahigh performance at low temperature as well as for high noise operability at high operating temperature (HOT). Therefore, a strong effort has been carried out during the last few years for lattice-matched CdZnTe substrate and HgCdTe active layer growth improvement, leading to very large substrates and ultraflat liquid-phase epitaxy layers. The same analysis holds for diode process quality and passivation. Therefore, the photodiode process has been completely revisited in order to optimize HOT operability. Also necessary for the next generation of HOT devices, some significant progress has been made in small-pixel-pitch interconnection on silicon read-out circuits. Indeed, the first 10- μ m focal-plane arrays (FPAs) have been successfully fabricated this year in the mid-wave infrared (IR) band. The latest avalanche photodiode (APD) realizations are also presented with 15- μ m-pitch FPAs for passive imaging and 30- μ m-pitch ultrafast arrays running at 1.5 kHz full frame rate. Linear-mode photon counting using APDs is also briefly discussed. Finally, the paper concludes on more complex structures for the third generation of IR detectors, discussing the latest achievements in dual-band FPA fabrication in various spectral bands.
ISSN:	0361-5235 1543-186X
DOI:	10.1007/s11664-013-2803-9