Search Results - "Voss, P.L."

All-fiber photon-pair source for quantum communications by Fiorentino, M., Voss, P.L., Sharping, J.E., Kumar, P.

“…In this letter, we present a source of quantum-correlated photon pairs based on parametric fluorescence in a fiber Sagnac loop. The photon pairs are generated…”
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Improving InGaN heterojunction solar cells efficiency using a semibulk absorber by Arif, M., Elhuni, W., Streque, J., Sundaram, S., Belahsene, S., El Gmili, Y., Jordan, M., Li, X., Patriarche, G., Slaoui, A., Migan, A., Abderrahim, R., Djebbour, Z., Voss, P.L., Salvestrini, J.P., Ougazzaden, A.

“…We demonstrate enhanced short circuit current density and power conversion efficiency in InGaN heterojunction solar cells using a semibulk absorber…”
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Semibulk InGaN: A novel approach for thick, single phase, epitaxial InGaN layers grown by MOVPE by Pantzas, K., El Gmili, Y., Dickerson, J., Gautier, S., Largeau, L., Mauguin, O., Patriarche, G., Suresh, S., Moudakir, T., Bishop, C., Ahaitouf, A., Rivera, T., Tanguy, C., Voss, P.L., Ougazzaden, A.

“…In this paper we demonstrate a solution to systematically obtain thick, single phase InGaN epilayers by MOVPE. The solution consists in periodically inserting…”
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In-line frequency-nondegenerate phase-sensitive fiber-optical parametric amplifier by Renyong Tang, Devgan, P., Voss, P.L., Grigoryan, V.S., Kumar, P.

“…We demonstrate a phase-sensitive fiber-optical parametric amplifier based on frequency-nondegenerate four-wave mixing in the telecom band. An input signal is…”
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Transferrable GaN-based Micro-LED heterostructures grown on h-BN for optogenetic applications by Tran, T.M., Kassem, A., Ottapilakkal, V., Vuong, P., Gujrati, R., Bourras, M., Srivastava, A., Perepeliuc, A., Moudakir, T., Gautier, S., Bouchoule, S., Tchernycheva, M., Voss, P.L., Sundaram, S., Salvestrini, J.P., Ougazzaden, A.

“…•GaN-based micro-LEDs grown on 2D h-BN on SiN-patterned sapphire were demonstrated.•Selective area growth enables high-quality micro-LEDs for cochlear implant…”
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Thermal stability of thin hexagonal boron nitride grown by MOVPE on epigraphene by Ottapilakkal, V., Juyal, A., Sundaram, S., Vuong, P., Mballo, A., Beck, L., Nunn, G., Su, Y., Loiseau, A., Fossard, F., Mérot, J.S., Chapron, D., Kauffmann, T.H., Salvestrini, J.P., Voss, P.L., de Heer, W.A., Berger, C., Ougazzaden, A.

“…•Growth of thin film of Boron Nitride on Graphene.•High structural quality of Boron Nitride films.•Continuous coverage on graphene surface.•High thermal…”
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MOVPE grown periodic AlN/BAlN heterostructure with high boron content by Li, X., Sundaram, S., El Gmili, Y., Genty, F., Bouchoule, S., Patriache, G., Disseix, P., Réveret, F., Leymarie, J., Salvestrini, J.-P., Dupuis, R.D., Voss, P.L., Ougazzaden, A.

“…Five-period AlN/BAlN heterostructure containing boron as high as 11% has been successfully grown by MOVPE. Good periodicity of two alternative layers has been…”
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Distributed Bragg reflectors based on diluted boron-based BAlN alloys for deep ultraviolet optoelectronic applications by Abid, M., Moudakir, T., Orsal, G., Gautier, S., En Naciri, A., Djebbour, Z., Ryou, J.-H., Patriarche, G., Largeau, L., Kim, H. J., Lochner, Z., Pantzas, K., Alamarguy, D., Jomard, F., Dupuis, R. D., Salvestrini, J.-P., Voss, P. L., Ougazzaden, A.

“…Highly reflective deep UV distributed Bragg reflectors (DBRs) based on the BAlN material system have been grown by metalorganic vapour phase epitaxy on AlN…”
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Structural and optical investigations of AlGaN MQWs grown on a relaxed AlGaN buffer on AlN templates for emission at 280nm by Li, X., Le Gac, G., Bouchoule, S., El Gmili, Y., Patriarche, G., Sundaram, S., Disseix, P., Réveret, F., Leymarie, J., Streque, J., Genty, F., Salvestrini, J-P., Dupuis, R.D., Li, X.-H., Voss, P.L., Ougazzaden, A.

“…10-period Al0.57Ga0.43N/Al0.38Ga0.62N multi-quantum wells (MQWs) were grown on a relaxed Al0.58Ga0.42N buffer on AlN templates on sapphire. The threading…”
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Chemical lift-off and direct wafer bonding of GaN/InGaN P–I–N structures grown on ZnO by Pantzas, K., Rogers, D.J., Bove, P., Sandana, V.E., Teherani, F.H., El Gmili, Y., Molinari, M., Patriarche, G., Largeau, L., Mauguin, O., Suresh, S., Voss, P.L., Razeghi, M., Ougazzaden, A.

“…p-GaN/i-InGaN/n-GaN (PIN) structures were grown epitaxially on ZnO-buffered c-sapphire substrates by metal organic vapor phase epitaxy using the industry…”
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Investigation of a relaxation mechanism specific to InGaN for improved MOVPE growth of nitride solar cell materials by Pantzas, K., Patriarche, G., Orsal, G., Gautier, S., Moudakir, T., Abid, M., Gorge, V., Djebbour, Z., Voss, P. L., Ougazzaden, A.

“…In this paper we report on a spontaneous 2D/3D transition observed in InGaN alloys after 60 nm of growth. This transition is responsible for the formation of a…”
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Structural and compositional characterization of MOVPE GaN thin films transferred from sapphire to glass substrates using chemical lift-off and room temperature direct wafer bonding and GaN wafer scale MOVPE growth on ZnO-buffered sapphire by Gautier, S., Moudakir, T., Patriarche, G., Rogers, D.J., Sandana, V.E., Hosseini Téherani, F., Bove, P., El Gmili, Y., Pantzas, K., Sundaram, Suresh, Troadec, D., Voss, P.L., Razeghi, M., Ougazzaden, A.

“…GaN thin films were grown on ZnO/c-Al2O3 with excellent uniformity over 2in. diameter wafers using a low temperature/pressure MOVPE process with N2 as a…”
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Suppression of crack generation in AlGaN/GaN distributed Bragg reflectors grown by MOVPE by Moudakir, T., Gautier, S., Suresh, S., Abid, M., El Gmili, Y., Patriarche, G., Pantzas, K., Troadec, D., Jacquet, J., Genty, F., Voss, P., Ougazzaden, A.

“…AlGaN/GaN distributed Bragg reflectors have been grown on GaN templates by Metal Organic Vapor Phase Epitaxy (MOVPE). To overcome the problem of crack…”
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Link between crystal quality and electrical properties of metalorganic vapour phase epitaxy InxGa1−xN thin films by Gorge, V., Djebbour, Z., Migan-Dubois, A., Pareige, C., Longeaud, C., Pantzas, K., Moudakir, T., Gautier, S., Orsal, G., Voss, P. L., Ougazzaden, A.

“…We report on the crystal quality of metalorganic vapour phase epitaxy-grown InGaN with indium content ranging from 0% to 20%. Absorbance measurements are fit…”
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Metal-organic vapour phase epitaxy of BInGaN quaternary alloys and characterization of boron content by Gautier, S., Orsal, G., Moudakir, T., Maloufi, N., Jomard, F., Alnot, M., Djebbour, Z., Sirenko, A.A., Abid, M., Pantzas, K., Ferguson, I.T., Voss, P.L., Ougazzaden, A.

“…BInGaN quaternary alloys with up to 2% boron and 14% of indium have been grown on GaN/sapphire template substrates by metal-organic vapour phase epitaxy…”
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Generation of high purity telecom-band entangled photon-pairs in dispersion-shifted fiber by Kim Fook Lee, Jun Chen, Chuang Liang, Xiaoying Li, Voss, P.L., Kumar, P.

“…We generate entangled photon-pairs from dispersion-shifted fiber at various temperatures. Two-photon interference with > 98% visibility and Bellpsilas…”
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Raman-effect induced noise-figure limit for /spl chi//sup (3)/ parametric amplifiers and wavelength converters by Voss, P.L., Kumar, P.

“…The non-zero response time of the Kerr nonlinearity sets a fundamental limit on the noise figure of phase-insensitive fiber parametric amplifiers and…”
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Optimal operating conditions and modulation format for 160 Gb/s signals in a fiber parametric amplifier used as a slow-light delay line element by Fangfei Liu, Yikai Su, Voss, P.L.

“…We study optimal operating conditions for 160-Gb/s signals traversing a slow-light delay line based on parametric amplification. Six phase modulated formats…”
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Frequency up-conversion at the single-photon level in a periodically-poled lithium-niobate waveguide by Dugan, S.W., Li, X., Voss, P.L., Kumar, P.

“…Using sum-frequency generation we fully up-convert signal photons at 1550 nm to 775 nm. Due to coupling and filtering losses at the output, overall quantum…”
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Quantum information processing with optical fibers by Kumar, P., Lee, K.F., Chen, J., Li, X., Voss, P.L.

“…Fiber-based sources of entangled photons offer some unique advantages over their crystal counterparts. We present our recent progress in the development of…”
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