Search Results - "Vorozov, N. N."
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Technological aspects of oxidated porous silicon waveguides
Published in Physica. E, Low-dimensional systems & nanostructures (01-03-2003)“…Technological aspects related to the fabrication of buried oxidized porous silicon waveguides (OPSWG) as the influence of swirl defects and a suitable…”
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Heteroepitaxy of PbS on porous silicon
Published in Thin solid films (06-07-1999)“…Epitaxial PbS films were grown by molecular-beam epitaxy (MBE) on the surface of porous silicon (PS) formed on the silicon substrate of (111) orientation. The…”
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3
Buffer layer influence on guiding properties of oxidized porous silicon waveguides
Published in Physica. E, Low-dimensional systems & nanostructures (01-03-2003)“…We studied the influence of the thickness and porosity of the buffer layer on the guiding properties of oxidized porous silicon waveguides (OPSWG). It is…”
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4
Solvent detection using porous silicon optical waveguides
Published in Journal of luminescence (01-12-1998)“…Since the first report on the use of porous silicon as an optical waveguide medium in 1995, significant development has been made towards the understanding and…”
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Journal Article Conference Proceeding -
5
Er-doped oxidised porous silicon waveguides
Published in Thin solid films (21-09-2001)“…The present work reports Er-doped channel oxidized porous silicon waveguides (OPSWG) formed from n +-type Si by the two-step anodisation process. Er has been…”
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6
Porous Silicon: A Buffer Layer for PbS Heteroepitaxy
Published in Physica status solidi. A, Applied research (01-11-2000)“…In the present work, we report on the heteroepitaxial growth of PbS on porous silicon (PS). Epitaxial PbS films were grown by MBE on the surface of PS formed…”
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7
Oxidized Porous Silicon: From Dielectric Isolation to Integrated Optical Waveguides
Published in Journal of porous materials (01-01-2000)“…A brief review of 20-years research of formation, processing and utilizing of oxidized porous silicon (OPS) is presented. Electrolytes to form porous silicon…”
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8
Strong 1.54 μm luminescence from erbium-doped porous silicon
Published in Thin solid films (15-04-1996)“…Porous silicon doped by erbium electrodeposition or from spin-on silica gel film followed by rapid thermal processing at 950 °C or higher exhibited…”
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9
Bending properties in oxidized porous silicon waveguides
Published in Materials science in semiconductor processing (01-10-2000)“…The greatest limit in high-speed communications between different circuit blocks is due to the delays introduced by metal interconnections. Knock-down wire…”
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10
Porous silicon as low-dimensional host material for erbium-doped structures
Published in Thin solid films (01-04-1997)“…A low-dimensional matrix of porous silicon (PS) was found to be an effective host material for erbium (Er) electrodeposition from Er(NO 3) 3·5H 2O/ethanol…”
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11
Erbium-doped oxidized porous silicon for integrated optical waveguides
Published in Technical physics letters (01-09-1999)Get full text
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12
Luminescence of erbium-doped porous silicon
Published in Technical physics letters (01-01-1997)Get full text
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13
Er-doped oxidised porous silicon waveguides
Published in Thin solid films (21-09-2001)“…The present work reports Er-doped channel oxidized porous silicon waveguides (OPSWG) formed from n super(+)-type Si by the two-step anodisation process. Er has…”
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14
Oxidized porous silicon: from dielectric isolation to integrated optical waveguides
Published in Journal of porous materials (16-03-1998)“…A brief review of 20-years research of formation, processing and utilizing of oxidized porous silicon (OPS) is presented. Electrolytes to form porous silicon…”
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15
Porous silicon based heterostructures: formation, properties, and application
Published in 1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings (1996)“…The unique combination of perfect crystalline structure, developed surface, and high activity of porous silicon (PS) provides a real possibility for creation…”
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Conference Proceeding