Search Results - "Voropaev, K. O."

Mushroom Mesa Structure for InAlAs–InGaAs Avalanche Photodiodes by Maleev, N. A., Kuzmenkov, A. G., Kulagina, M. M., Vasyl’ev, A. P., Blokhin, S. A., Troshkov, S. I., Nashchekin, A. V., Bobrov, M. A., Blokhin, A. A., Voropaev, K. O., Bugrov, V. E., Ustinov, V. M.

“…Mushroom mesa structure for InAlAs/InGaAs avalanche photodiodes (APD) was proposed and investigated. APD heterostructrures were grown by molecular-beam…”
Get full text

Emission Linewidth and α-Factor of 1.55 μm-Range Vertical-Cavity Surface-Emitting Lasers Based on InGaAs/InGaAlAs Quantum Wells by Blokhin, S. A., Kovach, Ya. N., Bobrov, M. A., Blokhin, A. A., Maleev, N. A., Kuzmenkov, A. G., Babichev, A. V., Novikov, I. I., Karachinsky, L. Ya, Kolodeznyi, E. S., Voropaev, K. O., Kulikov, A. V., Egorov, A. Yu, Ustinov, V. M.

“…The emission linewidth of single-mode vertical-cavity surface-emitting lasers with an active region based on strained InGaAs/InGaAlAs quantum wells in the…”
Get full text

Investigation of the Characteristics of the InGaAs/InAlGaAs Superlattice for 1300 nm Range Vertical-Cavity Surface-Emitting Lasers by Blokhin, S. A., Babichev, A. V., Gladyshev, A. G., Karachinsky, L. Ya, Novikov, I. I., Blokhin, A. A., Bobrov, M. A., Maleev, N. A., Kuzmenkov, A. G., Nadtochiy, A. M., Nevedomskiy, V. N., Andryushkin, V. V., Rochas, S. S., Denisov, D. V., Voropaev, K. O., Zhumaeva, I. O., Ustinov, V. M., Egorov, A. Yu, Bougrov, V. E.

“…X-ray structural analysis and photoluminescence spectroscopy techniques were used to study heterostructures based on InGaAs/InAlGaAs superlattice for active…”
Get full text

Impact of Transverse Optical Confinement on Performance of 1.55 μm Vertical-Cavity Surface-Emitting Lasers with a Buried Tunnel Junction by Blokhin, S. A., Bobrov, M. A., Blokhin, A. A., Maleev, N. A., Kuzmenkov, A. G., Vasyl’ev, A. P., Rochas, S. S., Babichev, A. V., Novikov, I. I., Karachinsky, L. Ya, Gladyshev, A. G., Denisov, D. V., Voropaev, K. O., Egorov, A. Yu, Ustinov, V. M.

“…—The impact of transverse optical confinement on the static and spectral characteristics of 1.55 μm vertical-cavity surface-emitting lasers (WF-VCSEL) with a…”
Get full text

Analysis of Internal Optical Loss of 1.3 μm Vertical-Cavity Surface-Emitting Laser Based on n++-InGaAs/p++-InGaAs/p++-InAlGaAs Tunnel Junction by Blokhin, S. A., Bobrov, M. A., Blokhin, A. A., Maleev, N. A., Kuzmenkov, A. G., Vasyl’ev, A. P., Rochas, S. S., Babichev, A. V., Novikov, I. I., Karachinsky, L. Ya, Gladyshev, A. G., Denisov, D. V., Voropaev, K. O., Egorov, A. Yu, Ustinov, V. M.

“…—The analysis of internal optical loss and internal quantum efficiency in 1.3 μm-range InAlGaA-sP/AlGaAs a composite n + -InGaAs/ p + -InGaAs/ p + -InAlGaAs…”
Get full text

1550 nm Range High-Speed Single-Mode Vertical-Cavity Surface-Emitting Lasers by Blokhin, S. A., Babichev, A. V., Karachinsky, L. Ya, Novikov, I. I., Blokhin, A. A., Bobrov, M. A., Kuzmenkov, A. G., Maleev, N. A., Andryushkin, V. V., Bougrov, V. E., Gladyshev, A. G., Denisov, D. V., Voropaev, K. O., Zhumaeva, I. O., Ustinov, V. M., Li, H., Tian, S. C., Han, S. Y., Sapunov, G. A., Egorov, A. Yu, Bimberg, D.

“…The results of complex studies of static and dynamic performance of 1550 nm range VCSELs, which were created by direct bonding (wafer fusion technique)…”
Get full text

1.55-μm-Range Vertical-Cavity Surface-Emitting Lasers, Manufactured by Wafer Fusion of Heterostructures Grown by Solid-Source Molecular-Beam Epitaxy by Blokhin, S. A., Nevedomsky, S. N., Bobrov, M. A., Maleev, N. A., Blokhin, A. A., Kuzmenkov, A. G., Vasyl’ev, A. P., Rohas, S. S., Babichev, A. V., Gladyshev, A. G., Novikov, I. I., Karachinsky, L. Ya, Denisov, D. V., Voropaev, K. O., Ionov, A. S., Egorov, A. Yu, Ustinov, V. M.

“…The results are presented of a study and optimization of the conditions under which heterointerfaces of the GaAs–InGaAsP type are formed via the direct…”
Get full text

The Effect of a Saturable Absorber in Long-Wavelength Vertical-Cavity Surface-Emitting Lasers Fabricated by Wafer Fusion Technology by Blokhin, S. A., Bobrov, M. A., Blokhin, A. A., Vasil’ev, A. P., Kuz’menkov, A. G., Maleev, N. A., Rochas, S. S., Gladyshev, A. G., Babichev, A. V., Novikov, I. I., Karachinsky, L. Ya, Denisov, D. V., Voropaev, K. O., Ionov, A. S., Egorov, A. Yu, Ustinov, V. M.

“…An investigation has been performed of 1.55-μm vertical-cavity surface-emitting lasers based on heterostructures with a buried tunnel junction (BTJ) with a…”
Get full text

High-Speed Vertical-Cavity Surface-Emitting 1550-nm-Range Lasers Manufactured by the Wafer Fusion Technology by Blokhin, S. A., Babichev, A. V., Karachinsky, L. Ya, Novikov, I. I., Blokhin, A. A., Bobrov, M. A., Kuzmenkov, A. G., Maleev, N. A., Andryushkin, V. V., Bugrov, V. E., Gladyshev, A. G., Kryzhanovskaya, N. V., Voropaev, K. O., Zhumaeva, I. O., Ustinov, V. M., Egorov, A. Yu

“…The results of studies of the characteristics of vertical-cavity surface-emitting lasers of 1550-nm spectral range with active region based on quantum InGaAs…”
Get full text

Optical Gain in Laser Heterostructures with an Active Area Based on an InGaAs/InGaAlAs Superlattice by Karachinsky, L. Ya, Novikov, I. I., Babichev, A. V., Gladyshev, A. G., Kolodeznyi, E. S., Rochas, S. S., Kurochkin, A. S., Bobretsova, Yu. K., Klimov, A. A., Denisov, D. V., Voropaev, K. O., Ionov, A. S., Bougrov, V. E., Egorov, A. Yu

“…An active area based on InGaAs/InGaAlAs superlattice for laser diodes operating in the spectral range between 1535 and 1565 nm is proposed and realized…”
Get full text

Influence of Output Optical Losses on the Dynamic Characteristics of 1.55-μm Wafer-Fused Vertical-Cavity Surface-Emitting Lasers by Blokhin, S. A., Bobrov, M. A., Blokhin, A. A., Kuzmenkov, A. G., Maleev, N. A., Ustinov, V. M., Kolodeznyi, E. S., Rochas, S. S., Babichev, A. V., Novikov, I. I., Gladyshev, A. G., Karachinsky, L. Ya, Denisov, D. V., Voropaev, K. O., Ionov, A. S., Egorov, A. Yu

“…The results of studying the dynamic characteristics of 1.55-μm single-mode vertical-cavity surface-emitting lasers (VCSELs) formed by the fusion of wafers of…”
Get full text

A Vertical-Cavity Surface-Emitting Laser for the 1.55-μm Spectral Range with Tunnel Junction Based on n++-InGaAs/p++-InGaAs/p++-InAlGaAs Layers by Blokhin, S. A., Bobrov, M. A., Maleev, N. A., Blokhin, A. A., Kuz’menkov, A. G., Vasil’ev, A. P., Rochas, S. S., Gladyshev, A. G., Babichev, A. V., Novikov, I. I., Karachinsky, L. Ya, Denisov, D. V., Voropaev, K. O., Ionov, A. S., Egorov, A. Yu, Ustinov, V. M.

“…A design of a tunnel junction (TJ) based on n ++ -InGaAs/ p ++ -InGaAs/ p ++ -InAlGaAs layers for vertical-cavity surface-emission lasers (VCSELs) for the…”
Get full text

Optical Gain of 1550-nm Range Multiple-Quantum-Well Heterostructures and Limiting Modulation Frequencies of Vertical-Cavity Surface-Emitting Lasers Based on Them by Kolodeznyi, E. S., Rochas, S. S., Kurochkin, A. S., Babichev, A. V., Novikov, I. I., Gladyshev, A. G., Karachinskii, L. Ya, Denisov, D. V., Bobretsova, Yu. K., Klimov, A. A., Blokhin, S. A., Voropaev, K. O., Ionov, A. S.

“…Results of investigation of 1550 nm range stripe semiconductor lasers fabricated from heterostructures with different designs of the gain medium are presented…”
Get full text

Analysis of the Internal Optical Losses of the Vertical-Cavity Surface-Emitting Laser of the Spectral Range of 1.55 µm Formed by a Plate Sintering Technique by Blokhin, S. A., Bobrov, M. A., Blokhin, A. A., Kuzmenkov, A. G., Maleev, N. A., Ustinov, V. M., Kolodeznyi, E. S., Rochas, S. S., Babichev, A. V., Novikov, I. I., Gladyshev, A. G., Karachinsky, L. Ya, Denisov, D. V., Voropaev, K. O., Ionov, A. S., Egorov, A. Yu

“…The results of a study of internal optical losses and current injection efficiency in vertical-emitting lasers of a spectral range of 1.55 µm obtained by…”
Get full text

Erratum to: Optical Gain of 1550-nm-Range Multiple-Quantum-Well Heterostructures and Limiting Modulation Frequencies of Vertical-Cavity Surface-Emitting Lasers Based on Them by Kolodeznyi, E. S., Rochas, S. S., Kurochkin, A. S., Babichev, A. V., Novikov, I. I., Gladyshev, A. G., Karachinsky, L. Ya, Denisov, D. V., Bobretsova, Yu. K., Klimov, A. A., Blokhin, S. A., Voropaev, K. O., Ionov, A. S.

Get full text

Erratum to: Optical Gain of 1550-nm Range Multiple-Quantum-Well Heterostructures and Limiting Modulation Frequencies of Vertical-Cavity Surface-Emitting Lasers Based on Them by Kolodeznyi, E. S., Rochas, S. S., Kurochkin, A. S., Babichev, A. V., Novikov, I. I., Gladyshev, A. G., Karachinsky, L. Ya, Denisov, D. V., Bobretsova, Yu. K., Klimov, A. A., Blokhin, S. A., Voropaev, K. O., Ionov, A. S.

“…The name of the seventh author should read L. Ya. Karachinsky…”
Get full text

Vertical-Cavity Surface-Emitting 1.55-μm Lasers Fabricated by Fusion by Babichev, A. V., Karachinskii, L. Ya, Novikov, I. I., Gladyshev, A. G., Blokhin, S. A., Mikhailov, S., Iakovlev, V., Sirbu, A., Stepniak, G., Chorchos, L., Turkiewicz, J. P., Voropaev, K. O., Ionov, A. S., Agustin, M., Ledentsov, N. N., Egorov, A. Yu

“…The results of studies on fabrication of vertical-cavity surface-emitting 1.55-μm lasers by fusing AlGaAs/GaAs distributed-Bragg-reflector wafers and an active…”
Get full text

Superlattice based 1300-nm Wafer fused VCSELs fully grown by MBE by Andryushkin, V.V., Blokhin, S.A., Babichev, A.V., Gladyshev, A.G., Karachinsky, L.Ya, Novikov, I.I., Blokhin, A.A., Bobrov, M.A., Maleev, N.A., Rochas, S.S., Voropaev, K.O., Zhumaeva, I.O., Ustinov, V.M., Egorov, A.Yu

“…1300-nm vertical-cavity surface-emitting lasers (VCSELs) based on InGaAs/InGaAlAs superlattice active region and GaAs/AlGaAs distributed Bragg reflectors grown…”
Get full text

1550-nm waveband VCSELs made by wafer-fusion technique by Rochas, S.S., Babichev, A.V., Blokhin, S.A., Gladyshev, A.G., Karachinsky, L.Ya, Novikov, I.I., Blokhin, A.A., Bobrov, M.A., Kuzmenkov, A.G., Maleev, N.A., Nevedomsky, N.A., Andryushkinl, V.V., Voropaev, K.O., Zhumaeva, I.O., Ustinov, V.M., Egorov, A.Yu, Bougrov, V.E.

“…1550-nm VCSELs with an active region of ten compressive-strained InGaAs QW, separated by the InP lattice-matched InAlGaAs barrier layers and GaAs/AlGaAs…”
Get full text