Search Results - "Voronkovskii, V. A."

Comparative study of electron-beam crystallization of amorphous hafnium oxides HfO2 and HfOx (x = 1.82) by Gerasimova, A. K., Aliev, V. Sh, Krivyakin, G. K., Voronkovskii, V. A.

“…The phase transformations of stoichiometric HfO 2 and non-stoichiometric HfO x oxides grown by ion-beam sputtering-deposition during their electron beam…”
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Resistive Switching Effect in TaN/HfOx/Ni Memristors with a Filament Formed under Local Electron-Beam Crystallization by Voronkovskii, V. A., Gerasimova, A. K., Aliev, V. Sh

“…The influence of an intense electron beam on a nonstoichiometric oxide HfO x ( ) layer of a TaN/HfO x /Ni memristor on its electrophysical properties is…”
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Phonon-assisted electron tunneling between traps in silicon oxide films treated in hydrogen plasma by Voronkovskii, V.A., Perevalov, T.V., Iskhakzay, R.M.H., Aliev, V.Sh, Gritsenko, V.A., Prosvirin, I.P.

“…•Thermal SiO2 films were treated in ECR hydrogen plasma.•The atomic ratio [O]/[Si] in the films decreases from 2.0 to 1.85 after the treatment.•The charge…”
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